7 research outputs found
Evidence for a Monolayer Excitonic Insulator
The interplay between topology and correlations can generate a variety of
unusual quantum phases, many of which remain to be explored. Recent advances
have identified monolayer WTe2 as a promising material for exploring such
interplay in a highly tunable fashion. The ground state of this two-dimensional
(2D) crystal can be electrostatically tuned from a quantum spin Hall insulator
(QSHI) to a superconductor. However, much remains unknown about the nature of
these ground states, including the gap-opening mechanism of the insulating
state. Here we report systematic studies of the insulating phase in WTe2
monolayer and uncover evidence supporting that the QSHI is also an excitonic
insulator (EI). An EI, arising from the spontaneous formation of electron-hole
bound states (excitons), is a largely unexplored quantum phase to date,
especially when it is topological. Our experiments on high-quality transport
devices reveal the presence of an intrinsic insulating state at the charge
neutrality point (CNP) in clean samples. The state exhibits both a strong
sensitivity to the electric displacement field and a Hall anomaly that are
consistent with the excitonic pairing. We further confirm the correlated nature
of this charge-neutral insulator by tunneling spectroscopy. Our results support
the existence of an EI phase in the clean limit and rule out alternative
scenarios of a band insulator or a localized insulator. These observations lay
the foundation for understanding a new class of correlated insulators with
nontrivial topology and identify monolayer WTe2 as a promising candidate for
exploring quantum phases of ground-state excitons.Comment: 37 pages, 4 Main Figures + 15 SI Figur
High-Pressure Synthesis and Characterization of ÎČ-GeSe-A Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation
Two-dimensional materials have significant potential for the development of new devices. Here we report the electronic and structural properties of ÎČ-GeSe, a previously unreported polymorph of GeSe, with a unique crystal structure that displays strong two-dimensional structural features. ÎČ-GeSe is made at high pressure and temperature and is stable under ambient conditions. We compare it to its structural and electronic relatives α-GeSe and black phosphorus. The ÎČ form of GeSe displays a boat conformation for its Ge-Se six-membered ring (âsix-ringâ), while the previously known α form and black phosphorus display the more common chair conformation for their six-rings. Electronic structure calculations indicate that ÎČ-GeSe is a semiconductor, with an approximate bulk band gap of Î â 0.5 eV, and, in its monolayer form, Î â 0.9 eV. These values fall between those of α-GeSe and black phosphorus, making ÎČ-GeSe a promising candidate for future applications. The resistivity of our ÎČ-GeSe crystals measured in-plane is on the order of Ï â 1 Ω·cm, while being essentially temperature independent.</p
High-Pressure Synthesis and Characterization of ÎČâGeSeîžA Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation
Two-dimensional materials have significant
potential for the development
of new devices. Here we report the electronic and structural properties
of ÎČ-GeSe, a previously unreported polymorph of GeSe, with a
unique crystal structure that displays strong two-dimensional structural
features. ÎČ-GeSe is made at high
pressure and temperature and is stable under ambient conditions. We
compare it to its structural and electronic relatives α-GeSe
and black phosphorus. The ÎČ form of GeSe displays a boat conformation
for its GeâSe six-membered ring (âsix-ringâ),
while the previously known α form and black phosphorus display
the more common chair conformation for their six-rings. Electronic
structure calculations indicate that ÎČ-GeSe is a semiconductor,
with an approximate bulk band gap of Î â 0.5 eV, and,
in its monolayer form, Î â 0.9 eV. These values fall
between those of α-GeSe and black
phosphorus, making ÎČ-GeSe a promising candidate for future applications.
The resistivity of our ÎČ-GeSe crystals measured in-plane is
on the order of Ï â 1 Ω·cm, while being essentially
temperature independent
One-dimensional Luttinger liquids in a two-dimensional moiré lattice
The Luttinger liquid (LL) model of one-dimensional (1D) electronic systems provides a powerful tool for understanding strongly correlated physics, including phenomena such as spinâcharge separation. Substantial theoretical efforts have attempted to extend the LL phenomenology to two dimensions, especially in models of closely packed arrays of 1D quantum wires, each being described as a LL. Such coupled-wire models have been successfully used to construct two-dimensional (2D) anisotropic non-Fermi liquids, quantum Hall states, topological phases and quantum spin liquids. However, an experimental demonstration of high-quality arrays of 1D LLs suitable for realizing these models remains absent. Here we report the experimental realization of 2D arrays of 1D LLs with crystalline quality in a moirĂ© superlattice made of twisted bilayer tungsten ditelluride (tWTe2). Originating from the anisotropic lattice of the monolayer, the moirĂ© pattern of tWTe2 hosts identical, parallel 1D electronic channels, separated by a fixed nanoscale distance, which is tuneable by the interlayer twist angle. At a twist angle of approximately 5 degrees, we find that hole-doped tWTe2 exhibits exceptionally large transport anisotropy with a resistance ratio of around 1,000 between two orthogonal in-plane directions. The across-wire conductance exhibits power-law scaling behaviours, consistent with the formation of a 2D anisotropic phase that resembles an array of LLs. Our results open the door for realizing a variety of correlated and topological quantum phases based on coupled-wire models and LL physics