Petrologic and minerochemical trends of acapulcoites, winonaites and lodranites: New evidence from image analysis and EMPA investigations

A comprehensive classification of primitive achondrites is difficult due to the high compositional and textural variability and the low number of samples available. Besides oxygen isotopic analysis, other minerochemical and textural parameters may provide a useful tool to solve taxonomic and genetic problems related to these achondrites. The results of a detailed modal, textural and minerochemical analysis of a set of primitive achondrites are presented and compared with literature data. All the samples show an extremely variable modal composition among both silicate and opaque phases. A general trend of troilite depletion vs. silicate fraction enrichment has been observed, with differences among coarse-grained and fine-grained meteorites. In regard to the mineral chemistry, olivine shows marked differences between the acapulcoite-lodranite and winonaite groups, while a compositional equilibrium between matrix and chondrules for both groups, probably due to the scarce influence of metamorphic grade on this phase, was observed. The analysis of Cr and Mn in clinopyroxene revealed two separate clusters for the acapulcoite/lodranite and winonaite groups, while the analysis of the reduction state highlighted three separate clusters. An estimate of equilibrium temperatures for the acapulcoite-lodranite and winonaite groups is provided. Finally, proposals regarding the genetic processes of these groups are discussed

Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature

We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin current which yields an electromotive field E_ISHE in the Pt layer. Such a signal is clearly detected at room temperature despite the strong {\Gamma} to L scattering which electrons undergo in the Ge conduction band. The ISHE signal dependence on the exciting photon energy is in good agreement with the electron spin polarization expected for optical orientation at the direct gap of Ge

Effect of asymmetric concentration profile on thermal conductivity in Ge/SiGe superlattices

The effect of the chemical composition in Si/Ge-based superlattices on their thermal conductivity has been investigated using molecular dynamics simulations. Simulation cells of Ge/SiGe superlattices have been generated with different concentration profiles such that the Si concentration follows a step-like, a tooth-saw, a Gaussian, and a gamma-type function in direction of the heat flux. The step-like and tooth-saw profiles mimic ideally sharp interfaces, whereas Gaussian and gamma-type profiles are smooth functions imitating atomic diffusion at the interface as obtained experimentally. Symmetry effects have been investigated comparing the symmetric profiles of the step-like and the Gaussian function to the asymmetric profiles of the tooth-saw and the gamma-type function. At longer sample length and similar degree of interdiffusion, the thermal conductivity is found to be lower in asymmetric profiles. Furthermore, it is found that with smooth concentration profiles where atomic diffusion at the interface takes place the thermal conductivity is higher compared to systems with atomically sharp concentration profiles

Giant g factor tuning of long-lived electron spins in Ge

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits in the mature framework of Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome such fundamental limitations by investigating a two dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally long spin relaxation and coherence times, eventually unveiling the potential of Ge in bridging the gap between spintronic concepts and semiconductor device physics. In particular, by tuning spin-orbit interaction via quantum confinement we demonstrate that the electron Land\'e g factor and its anisotropy can be engineered in our scalable and CMOS-compatible architectures over a range previously inaccessible for Si spintronics

HRTFs Measurement Based on Periodic Sequences Robust towards Nonlinearities in Automotive Audio

The head related transfer functions (HRTFs) represent the acoustic path transfer functions between sound sources in 3D space and the listener’s ear. They are used to create immersive audio scenarios or to subjectively evaluate sound systems according to a human-centric point of view. Cars are nowadays the most popular audio listening environment and the use of HRTFs in automotive audio has recently attracted the attention of researchers. In this context, the paper proposes a measurement method for HRTFs based on perfect or orthogonal periodic sequences. The proposed measurement method ensures robustness towards the nonlinearities that may affect the measurement system. The experimental results considering both an emulated scenario and real measurements in a controlled environment illustrate the effectiveness of the approach and compare the proposed method with other popular approaches

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the carriers. Here, we focus on Ge, which is a prominent candidate for shuttling spin quantum bits into the mainstream Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome these fundamental limitations by investigating a two-dimensional electron gas in quantum wells of pure Ge grown on Si. These epitaxial systems demonstrate exceptionally long spin lifetimes. In particular, by fine-tuning quantum confinement we demonstrate that the electron Landé g factor can be engineered in our CMOS-compatible architecture over a range previously inaccessible for Si spintronics