A HREEL investigation of adsorption and dissociation of NO on a Rh(110) surface

The adsorption and dissociation of NO on a Rh(110) surface in the temperature range from 100 to 300 K has been studied by means of high-resolution electron energy loss (HREEL) spectroscopy. At 100 K only one adsorption state of NO, assigned to bridge-bonded NO species, is observed at the whole NO coverage range. The N-O stretching frequency of this species increases from 1560 to 1710 cm-1 with increasing NO coverage. NO decomposition, which occurs readily at temperatures above 170 K has been studied for NO coverages less than 0.3 of the saturated NO coverage at 100 K. The HREELS data have shown that the fraction of NO molecules which undergo dissociation increases with increasing temperature and with decreasing initial NO coverage. For the highest NO coverages considered (0.3 of saturation at 100 K) all NO molecules decompose at 240 K. A variety of loss features are observed in the HREEL spectra after decomposition of different amounts of NO. These HREEL data are explained on the basis of comparison with the HREEL spectra measured for oxygen, nitrogen and mixed oxygen and nitrogen layers on Rh(110). It has been established that the variety of loss features observed after dissociation of NO is due to different oxygen states on the surface. The observed effect of the dissociation products on the N-O stretching frequencies have heen discussed considering the factors that can account for the blue-shifts observed in the presence of electronegative surface modifiers

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

We report on a suite of modeling approaches for the optimization of Avalanche Photodiodes for X-rays detection. Gain and excess noise are computed efficiently using a non-local/history dependent model that has been validated against full-band Monte Carlo simulations. The (stochastic) response of the detector to photon pulses is computed using an improved Random-Path-Length algorithm. As case studies, we consider diodes consisting of AlGaAs/GaAs multi-layers with separated absorption and multiplication regions. A superlattice creating a staircase conduction band structure is employed in the multiplication region to keep the multiplication noise low. Gain and excess noise have been measured in devices fabricated with such structure and successfully compared with the developed models

Phase I dynamics of cardiac output, systemic O2 delivery and lung O2 uptake at exercise onset in men in acute normobaric hypoxia.

We tested the hypothesis that vagal withdrawal plays a role in the rapid (phase I) cardiopulmonary response to exercise. To this aim, in five men (24.6+/-3.4 yr, 82.1+/-13.7 kg, maximal aerobic power 330+/-67 W), we determined beat-by-beat cardiac output (Q), oxygen delivery (QaO2), and breath-by-breath lung oxygen uptake (VO2) at light exercise (50 and 100 W) in normoxia and acute hypoxia (fraction of inspired O2=0.11), because the latter reduces resting vagal activity. We computed Q from stroke volume (Qst, by model flow) and heart rate (fH, electrocardiography), and QaO2 from Q and arterial O2 concentration. Double exponentials were fitted to the data. In hypoxia compared with normoxia, steady-state fH and Q were higher, and Qst and VO2 were unchanged. QaO2 was unchanged at rest and lower at exercise. During transients, amplitude of phase I (A1) for VO2 was unchanged. For fH, Q and QaO2, A1 was lower. Phase I time constant (tau1) for QaO2 and VO2 was unchanged. The same was the case for Q at 100 W and for fH at 50 W. Qst kinetics were unaffected. In conclusion, the results do not fully support the hypothesis that vagal withdrawal determines phase I, because it was not completely suppressed. Although we can attribute the decrease in A1 of fH to a diminished degree of vagal withdrawal in hypoxia, this is not so for Qst. Thus the dual origin of the phase I of Q and QaO2, neural (vagal) and mechanical (venous return increase by muscle pump action), would rather be confirmed

Fast, multi-band photon detectors based on quantum well devices for beam-monitoring in new generation light sources

In order to monitor the photon-beam position for both diagnostics and calibration purposes, we have investigated the possibility to use InGaAs/InAlAs Quantum Well (QW) devices as position-sensitive photon detectors for Free-Electron Laser (FEL) or Synchrotron Radiation (SR). Owing to their direct, low-energy band gap and high electron mobility, such QW devices may be used also at Room Temperature (RT) as fast multi-band sensors for photons ranging from visible light to hard X-rays. Moreover, internal charge-amplification mechanism can be applied for very low signal levels, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. Segmented QW sensors have been preliminary tested with 100-fs-wide 400 nm laser pulses and X-ray SR. The reported results indicate that these devices respond with 100 ps rise-times to such ultra-fast laser pulses. Besides, linear scan on the back-pixelated device has shown that these detectors are sensitive to the position of each ultrashort beam bunch

A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

We propose a simple expression to relate the total excess noise factor of a single-carrier multiplication staircase avalanche photodiode (APD) to the excess noise factor and gain given by the individual conduction band discontinuities. The formula is valid when electron impact ionization dominates hole impact ionization; hence, it is especially suited for staircase APDs with In-rich multiplication regions, as opposed, for example, to GaAs/AlGaAs systems where hole ionization plays an important role. The formula has been verified by accurate means of numerical simulations based on a newly developed nonlocal history dependent impact ionization model

Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization

A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications

A microspectroscopic study of the electronic homogeneity of ordered and disordered Sr2FeMoO6

Besides a drastic reduction in saturation magnetization of disordered Sr2FeMoO6 compared to highly ordered samples, magnetizations as a function of the temperature for different disordered samples may also show qualitatively different behaviors. We investigate the origin of such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples is responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with composition fluctuations of the type Sr2Fe1+xMo1-xO6 with Fe-rich (x>0) and Mo-rich (x<0) regions.Comment: 14 pages, 4 figure

Development and tests of a new prototype detector for the XAFS beamline at Elettra Synchrotron in Trieste

The XAFS beamline at Elettra Synchrotron in Trieste combines X-ray absorption spectroscopy and X-ray diffraction to provide chemically specific structural information of materials. It operates in the energy range 2.4-27 keV by using a silicon double reflection Bragg monochromator. The fluorescence measurement is performed in place of the absorption spectroscopy when the sample transparency is too low for transmission measurements or the element to study is too diluted in the sample. We report on the development and on the preliminary tests of a new prototype detector based on Silicon Drift Detectors technology and the SIRIO ultra low noise front-end ASIC. The new system will be able to reduce drastically the time needed to perform fluorescence measurements, while keeping a short dead time and maintaining an adequate energy resolution to perform spectroscopy. The custom-made silicon sensor and the electronics are designed specifically for the beamline requirements.Comment: Proceeding of the 6YRM 12th-14th Oct 2015 - L'Aquila (Italy). Accepted for publication on Journal of Physics: Conference Serie

Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer