Radiation Tolerance of Low-Cost Magnetometer for Space Applications

Knowing the three-dimensional magnetic field configuration and dynamics in space environments is key to understand the physical processes taking place. Plasma dynamics depend on the local orientation of the magnetic field, and key quantities such as pitch angle and dynamical processes such as waves and reconnection cannot be studied without in-situ measurements of the fields. For this reason, magnetometers are one of the most important instruments for space physics-focused missions. This is true both for spacecraft and also for landed missions, particularly on atmosphere-less bodies, where the space environment interacts directly with the surface. To enable the next generation of small spacecraft and landers, sensors need to be low-cost and withstand the harsh radiation environment present in space. Here we present the latest advances in the characterization of a commercial-off-the-shelf three-dimensional magnetometer,summarizing previous and newresults from radiation tests. The sensor shows tolerance up to a total ionization dose (TID) of 300 krad, levels well beyond those typical for a low-Earth orbit mission, and compliant with those expected during a landed mission on the Jovian moon Europa

Hardness Assurance for Total Dose and Dose Rate Testing of a State-of-the-Art Off-Shore 32 nm SOI CMOS Processor

No abstract availabl

Ultra-Scaled CMOS Radiation Performance

No abstract availabl

A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistor

The Effects of ELDRS at Ultra-Low Dose Rates

We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2x at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to approx.15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels

Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates

We have presented results of ultra-low dose rate irradiations (< or = 10 mrad(Si)/s) for a variety of radiation hardened and commercial linear bipolar devices. We observed low dose rate enhancement factors exceeding 1.5 in several parts. The worst case of dose rate enhancement resulted in functional failures, which occurred after 10 and 60 krad(Si), for devices irradiated at 0.5 and 10 mrad(Si)/s, respectively. Devices fabricated with radiation hardened processes and designs also displayed dose rate enhancement at below 10 mrad(Si)/s. Furthermore, the data indicated that these devices have not reached the damage saturation point. Therefore the degradation will likely continue to increase with increasing total dose, and the low dose rate enhancement will further magnify. The cases presented here, in addition to previous examples, illustrate the significance and pervasiveness of low dose rate enhancement at dose rates lower than 10 mrad(Si). These results present further challenges for radiation hardness assurance of bipolar linear circuits, and raise the question of whether the current standard test dose rate is conservative enough to bound degradations due to ELDRS

Recent Total Ionizing Dose and Displacement Damage Compendium of Candidate Electronics for NASA Space Systems

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices

Recent Results on SEU Hardening of SiGe HBT Logic Circuits

A viewgraph presentation on SEU tolerant SiGe HBT technology is shown. The topics include: 1) Introduction; 2) TID and SEU in SiGe Technology; 3) RHBD Techniques; 4) Experiment; 5) Heavy-Ion Data and Analysis; and 6) Summary

Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results

Compendium of Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices