Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

International audienc

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

International audienc

Critical failure mechanism of 0.25 µm AlGaN/GaN HEMT under severe stress test conditions

International audienc

Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions

Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device temperature at different locations close to the hotspot and then to use simulations to estimate the channel temperature. This paper describes a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave. Infrared thermography, charge-coupled device-based thermoreflectance microscopy, and micro-Raman spectroscopy have been performed to extract the thermal resistance of the components. Results have been compared with simulations using a 3-D finite-element model to estimate the operating channel temperature. Measurements have shown that the RF-biased thermal resistance and the dc-biased thermal resistance of GaN HEMTs are similar

Grid batch-dependent tuning of glow discharge parameters

International audienceSample preparation on cryo-EM grids can give various results, from very thin ice and homogeneous particle distribution (ideal case) to unwanted behavior such as particles around the "holes" or complexes that do not entirely correspond to the one in solution (real life). We recently run into such a case and finally found out that variations in the 3D reconstructions were systematically correlated with the grid batches that were used. We report the use of several techniques to investigate the grids' characteristics, namely TEM, SEM, Auger spectroscopy and Infrared Interferometry. This allowed us to diagnose the origin of grid preparation problems and to adjust glow discharge parameters. The methods used for each approach are described and the results obtained on a common specific case are reported

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

International audienceThe study of the pulsed drain current or noise characteristics in AlGaN/GaN HEMTs is the key of knowledge for designing the power amplifiers, the low noise amplifiers and the oscillators or mixers, but it is well accepted today that this study is not fully accomplished without pointing on the effect of the gate leakage current; It is obvious that the transistor's leakage current may disturb its operation at high power and high frequency. Leakage currents studies are also an area of great importance in optimization of safe operating area and reliability of HEMTs. Therefore, room temperature pulsed I-V and low frequency noise measurements of gate and drain currents of AlGaN/GaN HEMTs have been investigated under different bias conditions on two devices showing identical drain current and different gate current levels. The results show a correlation between two non-destructive measurement techniques applied on devices under test