16 research outputs found
Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si
wafers enabled by the molecular monolayer doping of phosphorous and boron atoms
and the use of conventional spike annealing. The junctions are characterized by
secondary ion mass spectrometry and non-contact sheet resistance measurements.
It is found that the majority (~70%) of the incorporated dopants are
electrically active, therefore, enabling a low sheet resistance for a given
dopant areal dose. The wafer-scale uniformity is investigated and found to be
limited by the temperature homogeneity of the spike anneal tool used in the
experiments. Notably, minimal junction leakage currents (<1 uA/cm2) are
observed which highlights the quality of the junctions formed by this process.
The results clearly demonstrate the versatility and potency of the monolayer
doping approach for enabling controlled, molecular-scale ultrashallow junction
formation without introducing defects in the semiconductor.Comment: 21 pages, 5 figure
Implantation ionique et jonctions ultrafines : Caractérisation, ingénierie des défauts et application aux technologies 65 et 45 nm
Thèse sous la direction de D. Mathiot soutenue le 15 avril 2008 - Université Louis Pasteur (Strasbourg I) - InESS (Institut d'Électronique du Solide et des Systèmes, UMR 7163
Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location
International audienc
Defect behavior in BF2 implants for S/D applications as a function of ion beam characteristics
International audienc
Environmental consequences of uranium atmospheric releases from fuel cycle facility II. The atmospheric deposition of uranium and thorium on plants
International audienceUranium and thorium isotopes were measured in cypress leaves, wheat grains and lettuce taken in the surroundings of the uranium conversion facility of Malvési (South of France). The comparison of activity levels and activity ratios (namely 238U/232Th and 230Th/232Th) in plants with those in aerosols taken at this site and plants taken far from it shows that aerosols emitted by the nuclear site (uranium releases in the atmosphere by stacks and 230Th-rich particles emitted from artificial ponds collecting radioactive waste mud) accounts for the high activities recorded in the plant samples close to the site. The atmospheric deposition process onto the plants appears to be the dominant process in plant contamination. Dry deposition velocities of airborne uranium and thorium were measured as 4.6×10-3 and 5.0×10-3ms-1, respectively. © 2014 Elsevier Ltd
Interaction between low temperature spacers and source drain extensions and pockets for both NMOS and PMOS of the 65 nm node technology
International audienc
Shallow junction engineering by phosphorus and carbon co-implantation: optimization of carbon dose and energy
International audienc
Ultra shallow junctions optimization with non doping species co-implantation
International audienc