2,352 research outputs found

    Factors Influencing Canadian-American Trade: A Canadian View

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    The Right of Foreign Corporations to Hold Land

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    Few questions have been more prolific of litigation than those relating to the legal status of foreign corporations, and the right of foreign corporations to hold land is among the most important of those questions. The statutes of most of the states prescribe certain limitations to the acquisition and holding of land by corporations, foreign and domestic; and the tendency is to place the former upon the same basis as the latter. It is impracticable in this article to discuss those various statutes; the purpose is merely to indicate the reasoning of the courts which is in general applicable in all states

    Reform of the Law of Evidence in Criminal Cases

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    Events surrounding the recent proposals for the reform of the English law of evidence in criminal cases may be thought to afford a cautionary tale, indicating the wrong way to engage in public debate upon such matters. In 1964, the Home Secretary asked the Criminal Law Revision Committee to review the law of evidence in criminal cases. Before its Report1 was published (some eight years later), and, indeed, before the Home Secretary had himself received it, there occurred a flood of critical comment in the Press and on radio and television, and questions in Parliament, on what were thought (not altogether accurately) to be the main recommendations about to be made. Those very critics who had thus jumped the gun then proceeded to blame the Committee itself for what had happened, on the ground that its work had not been sufficiently \u27open\u27 to the public. This seems to be less than fair to the Committee, since its task was publicised in the Press and in Parliament and the public were invited to comment; the Committee consulted those bodies likely to be interested and obtained the assistance of experts from overseas (among whom Professors Edwards, Friedland and Tollefson of Canada are mentioned in the Report)

    Is a Provision for the Initiative and Referendum Inconsistent with the Constitution of the United States?

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    We are told today that the Constitution of the United States forbids the adoption of the Initiative and the Referendum, as these involve such purely democratic principles as to be inconsistent with the republican form of government guaranteed by the fourth section of the fourth article of the Federal Constitution. The special interests that are opposed to the Initiative tell us that we must find some other cure for the evils at which it aims; that the Initiative is a purely democratic principle and, as such, it is forbidden by the fourth section of the fourth article of the Federal Constitution, which guarantees a republican form of government to the states. This is not the first time in our national history that the Federal Constitution has been invoked to foster the development and spread of noxious growths upon the ·body politic. The special interests that oppose the Initiative have a precedent in the action of the slaveholders before the war. The Constitution was invoked by them to perpetuate slavery and to extend its territorial limits. The Supreme Court responded to their demands, sustained their contention, and we all know the result. The Missouri Compromise, the act by which Congress attempted to confine within prescribed limits the existence of slavery, was declared void. It was held that the Constitution ex proprio vigore extended to the territories and, therefore, that its provisions regarding slavery became a part of the law governing these territories, that the will of the people as expressed by Congress was subordinate to that law and must submit to it. The slave­holding interests won the day for the time being. They had sufficient influence in Congress to prevent Constitutional amendment. The Missouri Compromise, which had been recognized as law for more than thirty years, gave way, but not so the will of the people who had enacted that law. It but gathered force by the attempts made to check it, until with the election of Abraham Lincoln and the attempted secession of the slave states it burst into civil war, and rivers of blood and billions of treasure were the price paid for what should have been procured by an amendment or by a proper construction of the Constitution

    Factors Influencing Canadian-American Trade: A Canadian View

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    An empirical study of the performance of APMOVPE AM0 InP homojunction solar cells as a function of emitter thickness and doping, and base doping

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    Their excellent radiation resistance and conversion efficiencies greater than 20 percent, measured under global conditions, make InP shallow-homojunction solar cells very attractive for space or terrestrial application. In addition, modeling studies show that, for optimized design, efficiencies of these devices should exceed 20 percent even under AM0 conditions. However, a systematic experimental investigation of the influence of the various cell design parameters on cell performance has not as yet been made. For the n+/p/p+ structures investigated in the previous modeling study, the design parameters include the impurity concentrations and thicknesses of the emitter and base layers. In the work reported here, researchers discuss an experimental investigation of the effects on cell performance of varying the impurity concentrations of the emitter and base and thickness of the emitter

    Recent advances in the ITO/InP solar cell

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    It was demonstrated that Indium Tin Oxide (ITO)/InP solar cells can now be made on as-received p(-) bulk substrates which are of nearly equal quality to those which could previously only be made on epitaxially grown p(-) InP base layers. Although this advancement is due in part to both increases in substrate quality and a better understanding of back contact formation, it appears that the passivation/compensation effects resulting from having H2 in the sputtering gas tends to reduce significantly the performance differences previously observed between these two substrates. It is shown that since high efficiency ITO/InP cells can be made from as-received substrates, and since the type conversion process is not highly spatially dependent, large area ITO/InP cells (4 sq cm) with efficiencies approaching 17 percent (Global) can be made. Furthermore, the measured open circuit voltages (V sub OC) and quantum efficiencies (QEs) from these large cells suggest that, when they are processed using optimum grid designs, the efficiencies will be nearly equal to that of the smaller cells thus far produced. It has been shown, through comparative experiments involving ITO/InP and IO/InP cells, that Sn may not be the major cause of type conversion of the InP surface and thus further implies that the ITO may not be an essential element in this type of device. Specifically, very efficient photovoltaic solar cells were made by sputtering (Sn free) In2O3 showing that type conversion and subsequent junction formation will occur even in the absence of the sputtered SN species. The result suggests that sputter damage may indeed be the important mechanism(s) of type conversion. Finally, an initial study of the stability of the ITO/InP cell done over the course of about one year has indicated that the J(sub SC) (short circuit current) and the fill factor (FF) are measurably stable within experimental certainty

    High-efficiency heteroepitaxial InP solar cells

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    High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed
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