20 research outputs found

    Exciton polaritons in a cylindrical microcavity with an embedded quantum wire

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    Exciton-light coupling in cylindrical microcavities containing quantum wires has been treated by means of classical electrodynamics within the nonlocal dielectric response model. A typical anticrossing behavior of quasi-one-dimensional exciton-polariton modes has been obtained, as well as the weak-coupling–strong-coupling threshold. Effects of the nonradiative damping of the exciton resonance in the quantum wire on the optical response of the microcavity structure have been analyzed

    Electromagnetic theory of the coupling of zero-dimensional exciton and photon states: A quantum dot in a spherical microcavity

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    Exciton-light coupling in spherical microcavities containing quantum dots has been treated by means of classical electrodynamics within the nonlocal dielectric response model. Typical anticrossing behavior of zero-dimensional exciton-polariton modes has been obtained, as well as the weak-coupling-strong-coupling threshold. The influence of the cavity Q factor on the optical response of the structure has been analyzed

    Elastic strains in GaAs/AIAs quantum dots studied by high-resolution x-ray diffraction

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    We have studied a GaAs/AlAs periodic quantum dot array (fabricated by electron beam lithography and reactive ion etching) using high-resolution x-ray reciprocal space mapping around the (004) and (1ÂŻ 1ÂŻ3) reciprocal lattice points. Both the coherently and the diffusely scattered x-ray intensities were analyzed by performing two-dimensional model calculations and comparing them with the measured reciprocal space maps of the diffracted intensity. From the distribution of the diffracted intensities we deduced the average strain status in the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the whole volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate, namely, 50 nm instead of 65 nm, respectively

    X-ray reciprocal space mapping of GaAs.AIAs quantum wires and quantum dots

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    Periodic arrays of 150 and 175 nm-wide GaAs–AlAs quantum wires and quantum dots were investigated, fabricated by electron beam lithography, and SiCl4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry. From the x-ray data the lateral periodicity of wires and dots, and the etch depth are extracted. The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots

    Elastic relaxation of dry-etched Si/SiGe quantum dots

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    Elastic relaxation of the compressive strain due to the lattice mismatch between SiGe and Si has been studied with both x-ray diffraction and Raman scattering in small (30–100 nm) dry-etched Si/SiGe quantum dots fabricated from high-quality multilayers grown on (001)-oriented Si. The Raman spectroscopic investigations showed that the dot alloy layers have relaxed by approximately 65% from their fully strained value and that a compensating tensile strain has been induced in the Si layers. The relaxation is essentially independent of the dot size and the values derived experimentally compare well with analytical and numerical model calculations

    Measurement and modeling of the effective thermal conductivity of sintered silver pastes

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    The effective thermal conductivity of sintered porous pastes of silver is modeled through two theoretical methods and measured by means of three experimental techniques. The first model is based on the differential effective medium theory and provides a simple analytical description considering the air\u3cbr/\u3epores like ellipsoidal voids of different sizes, while the second one arises from the analysis of the scanning-electron-microscope images of the paste cross-sections through the finite element method. The predictions of both approaches are consistent with each other and show that the reduction of the\u3cbr/\u3ethermal conductivity of porous pastes can be minimized with spherical pores and maximized with pancake-shaped ones, which are the most efficient to block the thermal conducting pathways. A thermal conductivity of 151.6 W/m K is numerically determined for a sintered silver sample with 22% of porosity.\u3cbr/\u3eThis thermal conductivity agrees quite well with the one measured by the Lateral Thermal Interface Material Analysis for a suspended sample and matches, within an experimental uncertainty smaller than 16%, with the values obtained by means of Raman thermometry and the 3\omega technique, for two samples buried in a silicon chip. The consistence between our theoretical and experimental results demonstrates the good predictive performance of our theoretical models to describe the thermal behavior of porous thermal interface materials and to guide their engineering with a desired thermal conductivity

    NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

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    © 2019 Elsevier Ltd The NEREID project (“NanoElectronics Roadmap for Europe: Identification and Dissemination”) is dedicated to mapping the future of European Nanoelectronics. NEREID's objective is to develop a medium and long term roadmap for the European nanoelectronics industry, starting from the needs of applications to address societal challenges and leveraging the strengths of the European eco-system. The roadmap will also identify promising novel nanoelectronic technologies, based on the advanced concepts developed by Research Centres and Universities, as well as identification of potential bottlenecks along the innovation (value) chain. Industry applications include Energy, Automotive, Medical/Life Science, Security, loT, Mobile Convergence and Digital Manufacturing. The NEREID roadmap covers Advanced Logic and Connectivity, Functional Diversification (Smart Sensors, Smart Energy and Energy for Autonomous Systems), Beyond-CMOS, Heterogeneous Integration and System Design as well as Equipment, Materials and Manufacturing Science. This article gives an overview of the roadmap's structure and content.status: publishe
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