Optimizing GaN (1122) hetero-epitaxial templates grown on (1010) sapphire

The hetero-epitaxy of (11¯22) GaN on (10¯10) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low-temperature AlN interlayers (ILs) as well as a SiN_x IL. X-ray diffraction (XRD) of ω scans of the symmetric (11¯22) reflection yielded an ω FWHM <450′′ along [11¯2¯3] and <900′′ along [10¯10] together with a 100 × 100 μm^2 rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was ≈10^9 cm^−2 while the basal plane stacking fault density was in the lower 10^5 cm^−1 range as determined by transmission electron microscopy. The suppression of the unwanted (10¯1¯3) phase was lower than 1 in 10,000 as judged from XRD.This work was supported by EU-FP7 ALIGHT No. NMP-2011-280587 and the UK Engineering and Physical Sciences Research Council No. EP/I012591/1 and EP/J003603/1.This is the final version of the article. It first appeared from Wiley via http://dx.doi.org/10.1002/pssb.20155226

Young's modulus, Poisson's ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on silicon by molecular beam epitaxy, using ammonia as a reactive nitrogen source. The main crystallographic orientation of ScN with respect to Si is (111)(ScN)parallel to(111)(Si) and [1-10](ScN)parallel to[0-11](Si); however, some twinning is also present in the films. The films displayed a columnar morphology with rough surfaces, due to low adatom mobility during growth. The strain-free lattice parameter of ScN films grown under optimized conditions was found to be 4.5047 +/- 0.0005 A, as determined using high-resolution x-ray diffraction (HRXRD). In-plane and out-of-plane strains were subsequently evaluated using HRXRD and were used to determine the Poisson ratio of ScN along the direction, which is found to be 0.188 +/- 0.005. Wafer curvature measurements were made and combined with the strain information to determine the average Young's modulus of the films, which is found to be 270 +/- 25 GPa. Residual film stresses ranged from -1 to 1 GPa (depending on film growth temperature and film thickness) due to competition between the tensile stress (induced by the differential thermal contraction between the ScN film and the Si substrate) and intrinsic compressive stresses generated during growth

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

The efficiency of light emitting diodes remains a topic of great contemporary interest due to their potential to reduce the amount of energy consumed in lighting. The current consensus is that electrons and holes distribute themselves through the emissive region by a drift-diffusion process which results in a highly non-uniform distribution of the light emission and can reduce efficiency. In this paper the measured variations in external quantum efficiency of a range of InGaN/GaN LEDs with different numbers of quantum wells are shown to compare closely with the predictions of a revised ABC model in which it is assumed that the electrically injected electrons and holes are uniformly distributed through the multi-quantum well region, or nearly so, and hence carrier recombination occurs equally in all the quantum wells. The implications of the reported results are that drift-diffusion plays a far lesser role in cross-well carrier transport than previously thought; that the dominant cause of efficiency droop is intrinsic to the quantum wells and that reductions in the density of non-radiative recombination centers in the MQW would enable the use of more QWs and thereby reduce Auger losses by spreading carriers more evenly across a wider emissive region

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

The influence of growth temperature and V/III-ratio on the surface morphology of (001) cubic zincblende GaN epilayers during metal organic vapour phase epitaxy growth has been investigated using atomic force microscopy and transmission electron microscopy. The zincblende phase purity as determined by X-ray diffraction was found to be above 98% for most GaN epilayers studied. As the growth temperature was increased from 850 °C to 910 °C and as the V/III-ratio was separately increased from 38 to 300, surface features were found to be elongated in the [1-10] direction, and the ratio of the length to width of such surface features was found to increase. Faceting was observed at V/III-ratios below 38 and above 300, which in the latter case was accompanied by a reduction of the zincblende phase purity. An explanation for these morphological trends is proposed based on effects such as the reduced symmetry of the top monolayer of the (001)-oriented zincblende GaN lattice, diffusion of Ga and N adatoms on such a surface, and the relative energies of the crystal facets.We would like to thank Innovate UK for the financial support within the Energy Catalyst Round 2 - Early Stage Feasibility scheme (Ref. 132135) and Energy Catalyst Round 4 - Mid Stage Feasibility scheme (Ref. 102766). We acknowledge the support of EPSRC through grant no. EP/M010589/1 and grant no. EP/R01146X/1. DJW would like to thank the support of EPSRC through grant no. EP/N01202X/1

Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

In this paper we report on the emergence of a high energy band at high optically excited carrier densities in the low temperature photoluminescence spectra from polar InGaN/GaN single quantum well structures. This high energy band emerges at carrier densities when the emission from the localized ground states begins to saturate. We attribute this high energy band to recombination involving higher energy less strongly localized electron and hole states that are populated once the localized ground states become saturated; this assignment is supported by the results from an atomistic tight-binding model. A particular characteristic of the recombination at the high carrier densities is that the overall forms of the photoluminescence decay curves bear great similarity to those from semiconductor quantum dots. The decay curves consist of plateaus where the photoluminescence intensity is constant with time as a result of Pauli state blocking in the high energy localized states followed by a rapid decrease in intensity once the carrier density is sufficiently low that the states involved are no longer saturated

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

In this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects.This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.This is the final version of the article. It first appeared from Wiley via https://doi.org/10.1002/pssc.20151018

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/ H011676/1.This is the final version of the article. It first appeared from AIP Publishing via http://dx.doi.org/10.1063/1.494132

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

In this paper we investigate the effect of including an electron blocking layer between the quantum well active region and the p-type layers of a light emitting diode has on the conduction and valence band profile of a light emitting diode. Two light emitting diode structures with nominally identical quantum well active regions one containing an electron blocking layer and one without were grown for the purposes of this investigation. The conduction and valence band profiles for both structures were then calculated using a commercially available Schrödinger-Poisson calculator, and a modification to the electric field across the QWs observed. The results of these calculations were then compared to photoluminescence and photoluminescence time decay measurements. The modification in electric field across the quantum wells of the structures resulted in slower radiative recombination in the sample containing an electron blocking layers. The sample containing an electron blocking layer was also found to exhibit a lower internal quantum efficiency, which we attribute to the observed slower radiative recombination lifetime making radiative recombination less competitive.This work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.This is the final version of the article. It first appeared from Wiley via http://dx.doi.org/10.1002/pssc.20151018