53 research outputs found

    GaSbBi alloys and heterostructures: fabrication and properties

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    International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures

    Ionization, recombination and radiation of impurities in plasmas An interactive atomic data and applications structure

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    SIGLEAvailable from British Library Document Supply Centre- DSC:4672.2625(JET-R--88/06) / BLDSC - British Library Document Supply CentreGBUnited Kingdo

    Monte Carlo modelling of impurity ion transport for a limiter source/sink

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    SIGLEAvailable from British Library Document Supply Centre- DSC:4672.262(JET-P--87/61) / BLDSC - British Library Document Supply CentreGBUnited Kingdo
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