53 research outputs found
GaSbBi alloys and heterostructures: fabrication and properties
International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures
Ionization, recombination and radiation of impurities in plasmas An interactive atomic data and applications structure
SIGLEAvailable from British Library Document Supply Centre- DSC:4672.2625(JET-R--88/06) / BLDSC - British Library Document Supply CentreGBUnited Kingdo
Monte Carlo modelling of impurity ion transport for a limiter source/sink
SIGLEAvailable from British Library Document Supply Centre- DSC:4672.262(JET-P--87/61) / BLDSC - British Library Document Supply CentreGBUnited Kingdo
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