Preparation and ferroelectric properties of (124)-oriented SrBi4Ti4O15 ferroelectric thin film on (110)-oriented LaNiO3 electrode

A (124)-oriented SrBi4Ti4O15 (SBTi) ferroelectric thin film with high volume fraction of {\alpha}SBTi(124)=97% was obtained using a metal organic decomposition process on SiO2/Si substrate coated by (110)-oriented LaNiO3 (LNO) thin film. The remanent polarization and coercive field for (124)-oriented SBTi film are 12.1 {\mu}C/cm2 and 74 kV/cm, respectively. No evident fatigue of (124)-oriented SBTi thin film can be observed after 1{\times}10e9 switching cycles. Besides, the (124)-oriented SBTi film can be uniformly polarized over large areas using a piezoelectric-mode atomic force microscope. Considering that the annealing temperature was 650{\deg}C and the thickness of each deposited layer was merely 30 nm, a long-range epitaxial relationship between SBTi(124) and LNO(110) facets was proposed. The epitaxial relationship was demonstrated based on the crystal structures of SBTi and LNO.Comment: 11 pages, 4 figures, published in Journal of Materials Science: Materials in Electronics (JMSE), 19 (2008), 1031-103

Threshold temperature for pairwise and many-particle thermal entanglement in the isotropic Heisenberg model

We study the threshold temperature for pairwise thermal entanglement in the spin-1/2 isotropic Heisenberg model up to 11 spins and find that the threshold temperature for odd and even number of qubits approaches the thermal dynamical limit from below and above, respectively. The threshold temperature in the thermodynamical limit is estimated. We investigate the many-particle entanglement in both ground states and thermal states of the system, and find that the thermal state in the four-qubit model is four-particle entangled before a threshold temperature.Comment: 4 pages with 1 fig. More discussions on many-particle ground-state and thermal entanglement in the multiqubit Heisenberg model from 2 to 11 qubits are adde

Cold‐sintered C0G multilayer ceramic capacitors

Multilayer ceramic capacitors (MLCCs) based on (Bi0.95Li0.05)(V0.9Mo0.1)O4‐Na2Mo2O7 (BLVMO‐NMO), with εr = 39, temperature coefficient of capacitance, TCC ≈ ±0.01%, and tan δ = 0.01 at 1 MHz, are successfully fabricated by a cold‐sintering process at 150 °C. Scanning electron microscopy of the MLCCs combined with EDS mapping, X‐ray diffraction, and Raman spectroscopy reveals well‐laminated and undistorted dielectric layers composed of BLVMO and NMO discrete phases separated by Ag internal electrodes. Prototypes show comparable properties to C0G MLCCs (TCC = ±30 ppm °C−1 from −55 to +125 °C) currently commercially fabricated at 1100 °C using CaZrO3‐based dielectrics with glass sintering aids and Ni internal electrodes