6,218 research outputs found
G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach
Preparation and ferroelectric properties of (124)-oriented SrBi4Ti4O15 ferroelectric thin film on (110)-oriented LaNiO3 electrode
A (124)-oriented SrBi4Ti4O15 (SBTi) ferroelectric thin film with high volume
fraction of {\alpha}SBTi(124)=97% was obtained using a metal organic
decomposition process on SiO2/Si substrate coated by (110)-oriented LaNiO3
(LNO) thin film. The remanent polarization and coercive field for
(124)-oriented SBTi film are 12.1 {\mu}C/cm2 and 74 kV/cm, respectively. No
evident fatigue of (124)-oriented SBTi thin film can be observed after
1{\times}10e9 switching cycles. Besides, the (124)-oriented SBTi film can be
uniformly polarized over large areas using a piezoelectric-mode atomic force
microscope. Considering that the annealing temperature was 650{\deg}C and the
thickness of each deposited layer was merely 30 nm, a long-range epitaxial
relationship between SBTi(124) and LNO(110) facets was proposed. The epitaxial
relationship was demonstrated based on the crystal structures of SBTi and LNO.Comment: 11 pages, 4 figures, published in Journal of Materials Science:
Materials in Electronics (JMSE), 19 (2008), 1031-103
Threshold temperature for pairwise and many-particle thermal entanglement in the isotropic Heisenberg model
We study the threshold temperature for pairwise thermal entanglement in the
spin-1/2 isotropic Heisenberg model up to 11 spins and find that the threshold
temperature for odd and even number of qubits approaches the thermal dynamical
limit from below and above, respectively. The threshold temperature in the
thermodynamical limit is estimated. We investigate the many-particle
entanglement in both ground states and thermal states of the system, and find
that the thermal state in the four-qubit model is four-particle entangled
before a threshold temperature.Comment: 4 pages with 1 fig. More discussions on many-particle ground-state
and thermal entanglement in the multiqubit Heisenberg model from 2 to 11
qubits are adde
Coldâsintered C0G multilayer ceramic capacitors
Multilayer ceramic capacitors (MLCCs) based on (Bi0.95Li0.05)(V0.9Mo0.1)O4âNa2Mo2O7 (BLVMOâNMO), with Δr = 39, temperature coefficient of capacitance, TCC â ±0.01%, and tan ÎŽ = 0.01 at 1 MHz, are successfully fabricated by a coldâsintering process at 150 °C. Scanning electron microscopy of the MLCCs combined with EDS mapping, Xâray diffraction, and Raman spectroscopy reveals wellâlaminated and undistorted dielectric layers composed of BLVMO and NMO discrete phases separated by Ag internal electrodes. Prototypes show comparable properties to C0G MLCCs (TCC = ±30 ppm °Câ1 from â55 to +125 °C) currently commercially fabricated at 1100 °C using CaZrO3âbased dielectrics with glass sintering aids and Ni internal electrodes
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