1,010 research outputs found

    Open Petri Nets

    Full text link
    The reachability semantics for Petri nets can be studied using open Petri nets. For us an "open" Petri net is one with certain places designated as inputs and outputs via a cospan of sets. We can compose open Petri nets by gluing the outputs of one to the inputs of another. Open Petri nets can be treated as morphisms of a category Open(Petri)\mathsf{Open}(\mathsf{Petri}), which becomes symmetric monoidal under disjoint union. However, since the composite of open Petri nets is defined only up to isomorphism, it is better to treat them as morphisms of a symmetric monoidal double category Open(Petri)\mathbb{O}\mathbf{pen}(\mathsf{Petri}). We describe two forms of semantics for open Petri nets using symmetric monoidal double functors out of Open(Petri)\mathbb{O}\mathbf{pen}(\mathsf{Petri}). The first, an operational semantics, gives for each open Petri net a category whose morphisms are the processes that this net can carry out. This is done in a compositional way, so that these categories can be computed on smaller subnets and then glued together. The second, a reachability semantics, simply says which markings of the outputs can be reached from a given marking of the inputs.Comment: 30 pages, TikZ figure

    Void Formation Study of Flip Chip in Package Using No-Flow Underfill

    Get PDF
    ©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.DOI: 10.1109/TEPM.2008.2002951The advanced flip chip in package (FCIP) process using no-flow underfill material for high I/O density and fine-pitch interconnect applications presents challenges for an assembly process that must achieve high electrical interconnect yield and high reliability performance. With respect to high reliability, the voids formed in the underfill between solder bumps or inside the solder bumps during the no-flow underfill assembly process of FCIP devices have been typically considered one of the critical concerns affecting assembly yield and reliability performance. In this paper, the plausible causes of underfill void formation in FCIP using no-flow underfill were investigated through systematic experimentation with different types of test vehicles. For instance, the effects of process conditions, material properties, and chemical reaction between the solder bumps and no-flow underfill materials on the void formation behaviors were investigated in advanced FCIP assemblies. In this investigation, the chemical reaction between solder and underfill during the solder wetting and underfill cure process has been found to be one of the most significant factors for void formation in high I/O and fine-pitch FCIP assembly using no-flow underfill materials

    Quantum simulation of spin ordering with nuclear spins in a solid state lattice

    Full text link
    An experiment demonstrating the quantum simulation of a spin-lattice Hamiltonian is proposed. Dipolar interactions between nuclear spins in a solid state lattice can be modulated by rapid radio-frequency pulses. In this way, the effective Hamiltonian of the system can be brought to the form of an antiferromagnetic Heisenberg model with long range interactions. Using a semiconducting material with strong optical properties such as InP, cooling of nuclear spins could be achieved by means of optical pumping. An additional cooling stage is provided by adiabatic demagnetization in the rotating frame (ADRF) down to a nuclear spin temperature at which we expect a phase transition from a paramagnetic to antiferromagnetic phase. This phase transition could be observed by probing the magnetic susceptibility of the spin-lattice. Our calculations suggest that employing current optical pumping technology, observation of this phase transition is within experimental reach.Comment: 11 pages, 3 figues; Published versio

    Angle selective backscattered electron contrast in the low-voltage scanning electron microscope: simulation & experiment for polymers

    Get PDF
    Recently developed detectors can deliver high resolution and high contrast images of nanostructured carbon based materials in low voltage scanning electron microscopes (LVSEM) with beam deceleration. Monte Carlo Simulations are also used to predict under which exact imaging conditions purely compositional contrast can be obtained and optimised. This allows the prediction of the electron signal intensity in angle selective conditions for back-scattered electron (BSE) imaging in LVSEM and compares it to experimental signals. Angle selective detection with a concentric back scattered (CBS) detector is considered in the model in the absence and presence of a deceleration field, respectively. The validity of the model prediction for both cases was tested experimentally for amorphous C and Cu and applied to complex nanostructured carbon based materials, namely a Poly(N-isopropylacrylamide)/Poly(ethylene glycol) Diacrylate (PNIPAM/PEGDA) semi-interpenetration network (IPN) and a Poly(3-hexylthiophene-2,5-diyl) (P3HT) film, to map nano-scale composition and crystallinity distribution by avoiding experimental imaging conditions that lead to a mixed topographical and compositional contrast
    corecore