Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions

UHF and VHF radar observations of thunderstorms

A study of thunderstorms was made in the Summer of 1985 with the 430-MHz and 50-MHz radars at the Arecibo Observatory in Puerto Rico. Both radars use the 300-meter dish, which gives a beam width of less than 2 degrees even at these long wavelengths. Though the radars are steerable, only vertical beams were used in this experiment. The height resolution was 300 and 150 meters for the UHF and VHF, respectively. Lightning echoes, as well as returns from precipitation and clear-air turbulence were detected with both wavelengths. Large increases in the returned power were found to be coincident with increasing downward vertical velocities at UHF, whereas at VHF the total power returned was relatively constant during the life of a storm. This was attributed to the fact that the VHF is more sensitive to scattering from the turbulence-induced inhomogeneities in the refractive index and less sensitive to scatter from precipitation particles. On occasion, the shape of the Doppler spectra was observed to change with the occurrence of a lightning discharge in the pulse volume. Though the total power and mean reflectivity weighted Doppler velocity changed little during these events, the power is Doppler frequency bins near that corresponding to the updraft did increase substantially within a fraction of a second after a discharge was detected in the beam. This suggests some interaction between precipitation and lightning

Cataphoresis in rotating electric fields

A new method of making cataphoresis measurements on colloid particles has been developed and tested. The method makes use of a rotating electric field which causes the particles to move in circles. In this way it is easily possible to test the effect of variable speed of the particle on the distribution of the diffuse electric double layer surrounding it. The results obtained indicate that this effect is negligible. Furthermore, it has been discovered that the mobility of the small particles (below 10^-4 cm in diameter) fluctuates widely and this is made very evident to the eye by the fluctuations in the circular paths of the particles. The fluctuations are quite violent with particles as small as 10^-6 cm in diameter. Considerable study of these variations has been made as well as an attempt to explain them qualitatively

Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance

Effect of dislocations on properties of heteroepitaxial InP solar cells

The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells

Measurements with the Chandra X-Ray Observatory's flight contamination monitor

NASA's Chandra X-ray Observatory includes a Flight Contamination Monitor (FCM), a system of 16 radioactive calibration sources mounted to the inside of the Observatory's forward contamination cover. The purpose of the FCM is to verify the ground-to-orbit transfer of the Chandra flux scale, through comparison of data acquired during the ground calibration with those obtained in orbit, immediately prior to opening the Observatory's sun-shade door. Here we report results of these measurements, which place limits on the change in mirror--detector system response and, hence, on any accumulation of molecular contamination on the mirrors' iridium-coated surfaces.Comment: 7pages,8figures,for SPIE 4012, paper 7

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19±0.17 eV giving a conduction band offset of 3.06±0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices