2,328 research outputs found

    Collisions of strings with Y junctions

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    We study the dynamics of Nambu--Goto strings with junctions at which three strings meet. In particular, we exhibit one simple exact solution and examine the process of intercommuting of two straight strings, in which they exchange partners but become joined by a third string. We show that there are important kinematical constraints on this process. The exchange cannot occur if the strings meet with very large relative velocity. This may have important implications for the evolution of cosmic superstring networks and non-abelian string networks.Comment: 4 pages, 1 figure, uses revtex 4. Clarifying comments added to correct a conceptual error, reference updated. Version accepted by Phys Rev Letters, with additional references and minor change

    Chiral Superconducting Membranes

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    We develop the dynamics of the chiral superconducting membranes (with null current) in an alternative geometric approach either making a Lagrangian description and a Hamiltonian point of view. Besides of this, we show the equivalence of the resulting descriptions to the one known Dirac-Nambu-Goto (DNG) case. Integrability for chiral string model is obtained using a proposed light-cone gauge. In a similar way, domain walls are integrated by means of a simple ansatz. We compare the results with recently works appeared in the literature.Comment: Latex file, 17 pages, no figures. Improved version, typos corrected, Comments and references adde

    Brane Gas Inflation

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    We consider the brane gas picture of the early universe. At later stages, when there are no winding modes and the background is free to expand, we show that a moving 3-brane, which we identify with our universe, can inflate even though it is radiation-dominated. The crucial ingredients for successful inflation are the coupling to the dilaton and the equation of state of the bulk. If we suppose the brane initially forms in a collision of higher-dimensional branes, then the spectrum of primordial density fluctuations naturally has a thermal origin.Comment: 4 pages, 1 figur

    PickCells: A Physically Reconfigurable Cell-composed Touchscreen

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    Touchscreens are the predominant medium for interactions with digital services; however, their current fixed form factor narrows the scope for rich physical interactions by limiting interaction possibilities to a single, planar surface. In this paper we introduce the concept of PickCells, a fully reconfigurable device concept composed of cells, that breaks the mould of rigid screens and explores a modular system that affords rich sets of tangible interactions and novel acrossdevice relationships. Through a series of co-design activities – involving HCI experts and potential end-users of such systems – we synthesised a design space aimed at inspiring future research, giving researchers and designers a framework in which to explore modular screen interactions. The design space we propose unifies existing works on modular touch surfaces under a general framework and broadens horizons by opening up unexplored spaces providing new interaction possibilities. In this paper, we present the PickCells concept, a design space of modular touch surfaces, and propose a toolkit for quick scenario prototyping

    Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side

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    This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility transistors (pHEMTs) on the same wafer for the first time. The AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs on a Gallium Arsenide — based wafer. T-gate technology has been used for the maximisation of the transistor performance. Devices with a 70 nm long gate foot showed excellent DC and small-signal characteristics, with 780 mS/mm peak transconductance and 200 GHz fmax. Planar Gunn diodes were fabricated in parallel with the pHEMTs, sharing most of the fabrication steps. The diodes produce oscillations with 87.6 GHz maximum frequency and −40 dBm maximum output power
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