13 research outputs found

    Long-Term Outcomes with Subcutaneous C1-Inhibitor Replacement Therapy for Prevention of Hereditary Angioedema Attacks

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    Background For the prevention of attacks of hereditary angioedema (HAE), the efficacy and safety of subcutaneous human C1-esterase inhibitor (C1-INH[SC]; HAEGARDA, CSL Behring) was established in the 16-week Clinical Study for Optimal Management of Preventing Angioedema with Low-Volume Subcutaneous C1-Inhibitor Replacement Therapy (COMPACT). Objective To assess the long-term safety, occurrence of angioedema attacks, and use of rescue medication with C1-INH(SC). Methods Open-label, randomized, parallel-arm extension of COMPACT across 11 countries. Patients with frequent angioedema attacks, either study treatment-naive or who had completed COMPACT, were randomly assigned (1:1) to 40 IU/kg or 60 IU/kg C1-INH(SC) twice per week, with conditional uptitration to optimize prophylaxis (ClinicalTrials.gov registration no. NCT02316353). Results A total of 126 patients with a monthly attack rate of 4.3 in 3 months before entry in COMPACT were enrolled and treated for a mean of 1.5 years; 44 patients (34.9%) had more than 2 years of exposure. Mean steady-state C1-INH functional activity increased to 66.6% with 60 IU/kg. Incidence of adverse events was low and similar in both dose groups (11.3 and 8.5 events per patient-year for 40 IU/kg and 60 IU/kg, respectively). For 40 IU/kg and 60 IU/kg, median annualized attack rates were 1.3 and 1.0, respectively, and median rescue medication use was 0.2 and 0.0 times per year, respectively. Of 23 patients receiving 60 IU/kg for more than 2 years, 19 (83%) were attack-free during months 25 to 30 of treatment. Conclusions In patients with frequent HAE attacks, long-term replacement therapy with C1-INH(SC) is safe and exhibits a substantial and sustained prophylactic effect, with the vast majority of patients becoming free from debilitating disease symptoms

    Light emitting diode traffic signal lamp characteristics

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    Cover title.; "May 2002."; Final report.; Performed for Ohio Dept. of Transportation under state job no. 14748(0).; Harvested from the web on 5/1/06Traffic signals using Light-Emitting Diode (LED) devices as luminous sources are gaining rapid acceptance across the nation, and around the world. LED Traffic Signal Lamp (LED TSL) assemblies are still relatively new on the market, becoming widely available in the mid-1990s. The use of LED TSLs offer several advantages over standard incandescent lamps to the signal maintenance agency. The focus of this study is to analyze the electrical characteristics of LED traffic signal lamp assemblies and determine if they are compatible with existing typical traffic signal hardware (load switches and conflict monitors).Traffic signals using Light-Emitting Diode (LED) devices as luminous sources are gaining rapid acceptance across the nation, and around the world. LED Traffic Signal Lamp (LED TSL) assemblies are still relatively new on the market, becoming widely available in the mid-1990s. The use of LED TSLs offer several advantages over standard incandescent lamps to the signal maintenance agency. The focus of this study is to analyze the electrical characteristics of LED traffic signal lamp assemblies and determine if they are compatible with existing typical traffic signal hardware (load switches and conflict monitors)

    Design and development of an automated National Electrical Manufacturers Association traffic signal controller tester

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    "August, 2000."; Final report.; Performed in cooperation with the Federal Highway Administration and Ohio Dept. of Transportation under state job no. 14646(0); Harvested from the web on 4/10/06Traffic signal system controllers designed to meet the NEMA TS1 Standards are one of the most prevalent types in use in the US and Canada as of this writing. A PC-based tester for testing NEMA TS1 traffic signal controllers has been developed as a part of this program. This tester may be used to verify compliance of controllers to the NEMA TS1 Standards. Test selection, data management, and data processing are controlled via familiar point-and-click menus and buttons on the display of the PC. Precise timing of the test conditions and test result reporting are handled by a separate microprocessor, located in the hardware interface. The user interface offers multiple levels of test result processing, including comparison of the results to user-specified tolerance limits for acceptable performance.Traffic signal system controllers designed to meet the NEMA TS1 Standards are one of the most prevalent types in use in the US and Canada as of this writing. A PC-based tester for testing NEMA TS1 traffic signal controllers has been developed as a part of this program. This tester may be used to verify compliance of controllers to the NEMA TS1 Standards. Test selection, data management, and data processing are controlled via familiar point-and-click menus and buttons on the display of the PC. Precise timing of the test conditions and test result reporting are handled by a separate microprocessor, located in the hardware interface. The user interface offers multiple levels of test result processing, including comparison of the results to user-specified tolerance limits for acceptable performance

    Microprocessor automation for Dynaflect Deflection Measurement System. Final report.

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    Ohio Department of Transportation, ColumbusMode of access: Internet.Author corporate affiliation: Ohio University, AthensSubject code: CDFSubject code: NMCSubject code: XKSubject code: XQC

    High gain 1.55 ÎĽm diode lasers based on InAs quantum dot like active regions

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    Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich. - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively

    15-W Fiber-Coupled Quantum-Dot Pump Module

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    We have developed 920-nm pump modules for Yb-doped fiber amplifiers. The pump laser utilizes a single layer of In(AlGa)As/GaAs quantum-dot material as active region. Stable operation without thermoelectric cooling, output powers of up to 40 W, and wall-plug efficiencies of more than 50% have been achieved on processed broad-area laser bars. The packaged module reaches 15 W when coupled to a 200-m fiber

    El programa nuclear iraní y los desafíos políticos y geoestratégicos: tres enfoques

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    We present a mask-aligner lithographic system operated with a frequency-quadrupled continuous-wave diode laser emitting at 193 nm. For this purpose, a 772 nm diode laser is amplified by a tapered amplifier in the master-oscillator power-amplifier configuration. The emission wavelength is upconverted twice, using LBO and KBBF nonlinear crystals in second-harmonic generation enhancement cavities. An optical output power of 10 mW is achieved. As uniform exposure field illumination is crucial in mask-aligner lithography, beam shaping is realized with optical elements made from fused silica and CaF2 featuring a diffractive non-imaging homogenizer. A tandem setup of shaped random diffusers, one static and one rotating, is used to control speckle formation. We demonstrate first experimental soft contact and proximity prints for a field size of 1 cm2 with a standard binary photomask and proximity prints with a two-level phase mask, both printed into 120 nm layers of photoresist on unstructured silicon substrates

    Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

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    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As2 source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model a nd realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data
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