3,594 research outputs found
Spin Coherence and N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR
Pulsed ESR experiments are reported for ensembles of negatively-charged
nitrogen-vacancy centers (NV) in diamonds at X-band magnetic fields
(280-400 mT) and low temperatures (2-70 K). The NV centers in synthetic
type IIb diamonds (nitrogen impurity concentration ~ppm) are prepared with
bulk concentrations of cm to cm
by high-energy electron irradiation and subsequent annealing. We find that a
proper post-radiation anneal (1000C for 60 mins) is critically
important to repair the radiation damage and to recover long electron spin
coherence times for NVs. After the annealing, spin coherence times of T~ms at 5~K are achieved, being only limited by C nuclear spectral
diffusion in natural abundance diamonds. At X-band magnetic fields, strong
electron spin echo envelope modulation (ESEEM) is observed originating from the
central N nucleus. The ESEEM spectral analysis allows for accurate
determination of the N nuclear hypefine and quadrupole tensors. In
addition, the ESEEM effects from two proximal C sites (second-nearest
neighbor and fourth-nearest neighbor) are resolved and the respective C
hyperfine coupling constants are extracted.Comment: 10 pages, 5 figure
Detection of low energy single ion impacts in micron scale transistors at room temperature
We report the detection of single ion impacts through monitoring of changes
in the source-drain currents of field effect transistors (FET) at room
temperature. Implant apertures are formed in the interlayer dielectrics and
gate electrodes of planar, micro-scale FETs by electron beam assisted etching.
FET currents increase due to the generation of positively charged defects in
gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel
regions. Implant damage is repaired by rapid thermal annealing, enabling
iterative cycles of device doping and electrical characterization for
development of single atom devices and studies of dopant fluctuation effects
Generalized Drude model: Unification of ballistic and diffusive electron transport
For electron transport in parallel-plane semiconducting structures, a model
is developed that unifies ballistic and diffusive transport and thus
generalizes the Drude model. The unified model is valid for arbitrary magnitude
of the mean free path and arbitrary shape of the conduction band edge profile.
Universal formulas are obtained for the current-voltage characteristic in the
nondegenerate case and for the zero-bias conductance in the degenerate case,
which describe in a transparent manner the interplay of ballistic and diffusive
transport. The semiclassical approach is adopted, but quantum corrections
allowing for tunneling are included. Examples are considered, in particular the
case of chains of grains in polycrystalline or microcrystalline semiconductors
with grain size comparable to, or smaller than, the mean free path. Substantial
deviations of the results of the unified model from those of the ballistic
thermionic-emission model and of the drift-diffusion model are found. The
formulation of the model is one-dimensional, but it is argued that its results
should not differ substantially from those of a fully three-dimensional
treatment.Comment: 14 pages, 5 figures, REVTEX file, to appear in J. Phys.: Condens.
Matte
Development of a porous burner for low calorific gaseous fuels offering a wide operating range [in press]
This work presents the development of a burner for the utilization of low calorific value waste gas, as it arises in the
production of high purity hydrogen from biogas using an oxidative steam reforming process. Stable combustion of
different fuel gases with fluctuating gas composition over a wide operating range is assured by the application of
combustion in an inert porous medium (PIM) utilizing a kinematic flame stabilization mechanism. The development
of the PIM-burner bases on calculated effective flame speeds within PIM derived from a 1-D numerical model
including harsh operating conditions with preheating temperatures above 800 K and carbon dioxide concentration of
70 %-vol in the fuel gas. Experiments are conducted on a tailored test rig in order to validate numerical predictions
by comparison of calculated effective flame speeds to eff ective flame speeds derived from temperature
measurements in PIM
Stark shift and field ionization of arsenic donors in Si-SOI structures
We develop an efficient back gate for silicon-on-insulator (SOI) devices
operating at cryogenic temperatures, and measure the quadratic hyperfine Stark
shift parameter of arsenic donors in isotopically purified Si-SOI layers
using such structures. The back gate is implemented using MeV ion implantation
through the SOI layer forming a metallic electrode in the handle wafer,
enabling large and uniform electric fields up to 2 V/m to be
applied across the SOI layer. Utilizing this structure we measure the Stark
shift parameters of arsenic donors embedded in the Si SOI layer and find
a contact hyperfine Stark parameter of m/V. We also demonstrate electric-field driven dopant ionization in
the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure
Cubic Defects: Comparing the Eight-State-System with its Two-Level-Approximation
Substitutional defects in a cubic symmetry (such as a lithium defect in a KCl
host crystal) can be modeled appropriately by an eight-state-system. Usually
this tunneling degree of freedom is approximated by a two-level-system. We
investigate the observable differences between the two models in three
contexts. First we show that the two models predict different relations between
the temperature dependence of specific heat and static susceptibility. Second
we demonstrate that in the presence of external forces (pressure and electric
field) the eight-state-system shows features that cannot be understood within
the framework of the two-level-approximation. In this context we propose an
experiment for measuring the parameter for tunneling along the face diagonal.
Finally we discuss the differences between the models appearing for strongly
coupled pairs. Geometric selection rules and particular forms of asymmetry lead
to clear differences between the two models.Comment: 19 pages, Latex, submitted to J. of Phys., some small supplement
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