A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds

Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment of the electronic correlations, to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of $GW$ self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.Comment: Final version as publishe

Role of defects and disorder in the half-metallic full-Heusler compounds

Half-metallic ferromagnets and especially the full-Heusler alloys containing Co are at the center of scientific research due to their potential applications in spintronics. For realistic devices it is important to control accurately the creation of defects in these alloys. We review some of our late results on the role of defects and impurities in these compounds. More precisely we present results for the following cases (i) doping and disorder in Co$_2$Cr(Mn)Al(Si) alloys, (ii) half-metallic ferrimagnetism appeared due to the creation of Cr(Mn) antisites in these alloys, (iii) Co-doping in Mn$_2$VAl(Si) alloys leading to half-metallic antiferromagnetism, and finally (iv) the occurrence of vacancies in the full-Heusler alloys containing Co and Mn. These results are susceptible of encouraging further theoretical and experimental research in the properties of these compounds.Comment: Chapter intended for a book with contributions of the invited speakers of the International Conference on Nanoscale Magnetism 2007. Revised version contains new figure

Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semiconductors such as Si and GaAs, in these systems the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2~eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the \emph{sp}-chemical element

Broken-Bond Rule for the Surface Energies of Noble Metals

Using two different full-potential ab-initio techniques we introduce a simple, universal rule based on the number of broken first-neighbor bonds to determine the surface energies of the three noble metals Cu, Ag and Au. When a bond is broken, the rearrangement of the electronic charge for these metals does not lead to a change of the remaining bonds. Thus the energy needed to break a bond is independent of the surface orientation. This novel finding can lead to the development of simple models to describe the energetics of a surface like step and kink formation, crystal growth, alloy formation, equilibrium shape of mesoscopic crystallites and surface faceting.Comment: 4 pages, 2 figure

Introduction to half-metallic Heusler alloys: Electronic Structure and Magnetic Properties

Intermetallic Heusler alloys are amongst the most attractive half-metallic systems due to the high Curie temperatures and the structural similarity to the binary semiconductors. In this review we present an overview of the basic electronic and magnetic properties of both Heusler families: the so-called half-Heusler alloys like NiMnSb and the the full-Heusler alloys like Co$_2$MnGe. \textit{Ab-initio} results suggest that both the electronic and magnetic properties in these compounds are intrinsically related to the appearance of the minority-spin gap. The total spin magnetic moment $M_t$ scales linearly with the number of the valence electrons $Z_t$, such that $M_t=Z_t-24$ for the full-Heusler and $M_t=Z_t-18$ for the half-Heusler alloys, thus opening the way to engineer new half-metallic alloys with the desired magnetic properties.Comment: 28 pages, submitted for a special issue of 'Journal of Physics D: Applied Physics' on Heusler alloy

Brillouin light scattering study of Co2_{2}Cr0.6_{0.6}Fe0.4_{0.4}Al and Co2_{2}FeAl Heusler compounds

The thermal magnonic spectra of Co$_{2}$Cr$_{0.6}$Fe$_{0.4}$Al (CCFA) and Co$_2$FeAl were investigated using Brillouin light scattering spectroscopy (BLS). For CCFA, the exchange constant A (exchange stiffness D) is found to be 0.48 $\mu$erg/cm (203 meV A$^2$), while for Co$_2$FeAl the corresponding values of 1.55 $\mu$erg/cm (370 meV A$^2$) were found. The observed asymmetry in the BLS spectra between the Stokes and anti-Stokes frequencies was assigned to an interplay between the asymmetrical profiles of hybridized Damon-Esbach and perpendicular standing spin-wave modes, combined with the optical sensitivity of the BLS signal to the upper side of the CCFA or Co$_2$FeAl film

Role of the van Hove Singularity in the Quantum Criticality of the Hubbard Model

A quantum critical point (QCP), separating the non-Fermi liquid region from the Fermi liquid, exists in the phase diagram of the 2D Hubbard model [Vidhyadhiraja et. al, Phys. Rev. Lett. 102, 206407 (2009)]. Due to the vanishing of the critical temperature associated with a phase separation transition, the QCP is characterized by a vanishing quasiparticle weight. Near the QCP, the pairing is enhanced since the real part of the bare d-wave p-p susceptibility exhibits algebraic divergence with decreasing temperature, replacing the logarithmic divergence found in a Fermi liquid [Yang et. al, Phys. Rev. Lett. 106, 047004 (2011)]. In this paper we explore the single-particle and transport properties near the QCP. We focus mainly on a van Hove singularity (vHS) coming from the relatively flat dispersion that crosses the Fermi level near the quantum critical filling. The flat part of the dispersion orthogonal to the antinodal direction remains pinned near the Fermi level for a range of doping that increases when we include a negative next-near-neighbor hopping t' in the model. For comparison, we calculate the bare d-wave pairing susceptibility for non-interacting models with the usual two-dimensional tight binding dispersion and a hypothetical quartic dispersion. We find that neither model yields a vHS that completely describes the critical algebraic behavior of the bare d-wave pairing susceptibility. The resistivity, thermal conductivity, thermopower, and the Wiedemann-Franz Law are examined in the Fermi liquid, marginal Fermi liquid, and pseudo-gap doping regions. A negative next-near-neighbor hopping t' increases the doping region with marginal Fermi liquid character. Both T and negative t' are relevant variables for the QCP, and both the transport and the motion of the vHS with filling suggest that they are qualitatively similar in their effect.Comment: 15 pages, 17 figure

Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds

Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter interesting both for fundamental condensed matter physics and material science[1-11]. Many of Heusler compounds with C1b structure are ternary semiconductors which are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the band gap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by lattice parameter) and the magnitude of spin-orbit coupling (by the atomic charge). Based on the first-principle calculations we demonstrate that around fifty Heusler compounds show the band inversion similar to HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantum well structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare earth element Ln which can realize additional properties ranging from superconductivity (e. g. LaPtBi[12]) to magnetism (e. g. GdPtBi[13]) and heavy-fermion behavior (e. g. YbPtBi[14]). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors.Comment: 20 pages, 5 figure

Higher order effective low-energy theories

Three well-known perturbative approaches to deriving low-energy effective theories, the degenerate Brillouin-Wigner perturbation theory (projection method), the canonical transformation, and the resolvent methods are compared. We use the Hubbard model as an example to show how, to fourth order in hopping t, all methods lead to the same effective theory, namely the t-J model with ring exchange and various correlated hoppings. We emphasize subtle technical difficulties that make such a derivation less trivial to carry out for orders higher than second. We also show that in higher orders, different approaches can lead to seemingly different forms for the low-energy Hamiltonian. All of these forms are equivalent since they are connected by an additional unitary transformation whose generator is given explicitly. The importance of transforming the operators is emphasized and the equivalence of their transformed structure within the different approaches is also demonstrated.Comment: 14 pages, no figure

Half-metallic Antiferromagnet BaCrFeAs2

First-principles calculations and a tight-binding analysis predict that the iron-pnictide BaCrFeAs2 is a promising candidate for half-metallic material with fully-compensated magnetization. The transition-metal ions Cr and Fe prefer the three-dimensional intervening lattice, which yields the antiferromagnetic order of spin orientations. Due to the difference between Cr and Fe in the electronegativity, a band gap is opened at the Fermi level in the spin channel in which Fe provides the majority carriers. The selective hybridization between 3d orbitals of Cr and As:4p states due to the peculiar lattice structure of the iron-pnictide is shown to be crucial for the novel properties.Comment: added reference