Variational treatment of electron-polyatomic molecule scattering calculations using adaptive overset grids

The Complex Kohn variational method for electron-polyatomic molecule scattering is formulated using an overset grid representation of the scattering wave function. The overset grid consists of a central grid and multiple dense, atom-centered subgrids that allow the simultaneous spherical expansions of the wave function about multiple centers. Scattering boundary conditions are enforced by using a basis formed by the repeated application of the free particle Green's function and potential, $\hat{G}^+_0\hat{V}$ on the overset grid in a "Born-Arnoldi" solution of the working equations. The theory is shown to be equivalent to a specific Pad\'e approximant to the $T$-matrix, and has rapid convergence properties, both in the number of numerical basis functions employed and the number of partial waves employed in the spherical expansions. The method is demonstrated in calculations on methane and CF$_4$ in the static-exchange approximation, and compared in detail with calculations performed with the numerical Schwinger variational approach based on single center expansions. An efficient procedure for operating with the free-particle Green's function and exchange operators (to which no approximation is made) is also described

Design, building, and testing of the postlanding systems for the assured crew return vehicle

The design, building, and testing of the postlanding support systems for a water-landing Assured Crew Return Vehicle (ACRV) are presented. One ACRV will be permanently docked to Space Station Freedom, fulfilling NASA's commitment to Assured Crew Return Capability in the event of an accident or illness. The configuration of the ACRV is based on an Apollo Command Module (ACM) derivative. The 1990-1991 effort concentrated on the design, building, and testing of a one-fifth scale model of the egress and stabilization systems. The objective was to determine the feasibility of (1) stabilizing the ACM out of the range of motions that cause seasickness and (2) the safe and rapid removal of a sick or injured crew member from the ACRV. The development of the ACRV postlanding systems model was performed at the University of Central Florida with guidance from the Kennedy Space Center ACRV program managers. Emphasis was placed on four major areas. First was design and construction of a one-fifth scale model of the ACM derivative to accommodate the egress and stabilization systems for testing. Second was the identification of a water test facility suitable for testing the model in all possible configurations. Third was the construction of the rapid egress mechanism designed in the previous academic year for incorporation into the ACRV model. The fourth area was construction and motion response testing of the attitude ring and underwater parachute systems

Alien Registration- Tobin, Loren C. (Ashland, Aroostook County)

https://digitalmaine.com/alien_docs/27294/thumbnail.jp

Letter and envelope from Loren C. Grieves

Letter concerning a cyclopedia of schools and colleges of the U.S. with envelope

Evaluation of Polyoxide Capacitor Edge Effects Using Ramped I-V Measurements

Thermally grown oxide on poly silicon has poorer insulator properties than an oxide grown on single crystal silicon. Due to surface roughness of the polysilicon surface the localized oxide electric field is enhanced at the surface bumps and asperities. In order to minimize surface roughness attention has to be given to the poly silicon surface for the steps following deposition. This includes doping and annealing the polysilicon in order to increase the grain size and using care in cleaning the poly and growing the oxide. By minimizing the surface roughness the poly oxide has better insulating properties due to a decrease in the localized electric field and this oxide demonstrates a higher barrier height (≠~) and breakdown voltages. Evaluation of the oxides were done using ramped I-V measurements. The measurements were taken at an area where Fowler-Nordhein~ tunneling ‘was taking place. That region of the curve was analyzed to find the breakdown voltages and barrier height, ØB. Breakdown voltages were found to be from a low of 37.85v to a high of 43.5v. Barrier heights ranged from 2.1eV to 2.6eV compared to 3.2eV which is the ØB for oxide grown on single crystal silicon. Edge length of the test structures was also evaluated and it was found that the barrier height decreased with increasing edge length indicating an increase in the local electric field along the edge regions

Clonal Propagation and Field Production of Rusty Blackhaw Ames 25098, a Promising Ornamental Shrub for Landscaping

Rusty blackhaw, Viburnum rufidulum Ames 25098, is a slow growing ornamental shrub that is prized for its glossy foliage, good fall color, and cold hardiness. Nursery staff have reported that it can be propagated readily by softwood (SO) stem cuttings but that it transplants poorly, and field production is often very slow. The objectives were to assess the growth characteristics of this selection in comparison with V. lantana and V. dentatum and to determine if these faster growing viburnums, used as rootstocks, could stimulate faster V. rufidulum (scion) shoot growth

Supercritical Conversion Of The 3rd Blue Phase To The Isotropic-Phase In A Highly Chiral Liquid-Crystal

The results of two independent experiments in the vicinity of the “transition” from the third blue phase ( BPIII) to isotropic phase ( I) are reported for a highly chiral liquid crystal. Heat capacity measurements using a high-resolution calorimeter and dynamic light-scattering measurements using circularly polarized light have been performed. The data show a continuous evolution of BPIII into I with no critical fluctuations. This is strong evidence that the BPIII-I transition in this compound is supercritical, indicating that the BPIII and I phases possess the same macroscopic symmetry

Absence of Dobrushin states for 2d2d long-range Ising models

We consider the two-dimensional Ising model with long-range pair interactions of the form $J_{xy}\sim|x-y|^{-\alpha}$ with $\alpha>2$, mostly when $J_{xy} \geq 0$. We show that Dobrushin states (i.e. extremal non-translation-invariant Gibbs states selected by mixed $\pm$-boundary conditions) do not exist. We discuss possible extensions of this result in the direction of the Aizenman-Higuchi theorem, or concerning fluctuations of interfaces. We also mention the existence of rigid interfaces in two long-range anisotropic contexts.Comment: revised versio

Tunneling between Two Quantum Hall Droplets

We report on tunneling experiment between two quantum Hall droplets separated by a nearly ideal tunnel barrier. The device is produced by cleaved edge overgrowth that laterally juxtaposes two two-dimensional electron systems across a high quality semiconductor barrier. The dramatic evolution of the tunneling characteristics is consistent with the magnetic field-dependent tunneling between the coupled edge states of the quantum Hall droplets. We identify a series of quantum critical points between successive strong and weak tunneling regimes that are reminiscent of the plateau-transitions in quantum Hall effect. Scaling analysis shows that the conductance near the critical magnetic fields $B_{c}$ is a function of a single scaling argument $|B-B_{c}|T^{-\kappa}$, where the exponent $\kappa = 0.42$. This puzzling resemblance to a quantum Hall-insulator transition points to the significance of interedge correlation in the lateral tunneling of quantum Hall droplets.Comment: 5 pages, 4 figure