Reactively sputtered RuO2 diffusion barriers

The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C

Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme

Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi_(2.3) film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min

WxN1–x alloys as diffusion barriers between Al and Si

Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W

Matching concepts across HOL libraries

Many proof assistant libraries contain formalizations of the same mathematical concepts. The concepts are often introduced (defined) in different ways, but the properties that they have, and are in turn formalized, are the same. For the basic concepts, like natural numbers, matching them between libraries is often straightforward, because of mathematical naming conventions. However, for more advanced concepts, finding similar formalizations in different libraries is a non-trivial task even for an expert. In this paper we investigate automatic discovery of similar concepts across libraries of proof assistants. We propose an approach for normalizing properties of concepts in formal libraries and a number of similarity measures. We evaluate the approach on HOL based proof assistants HOL4, HOL Light and Isabelle/HOL, discovering 398 pairs of isomorphic constants and types

TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities

Reactions of Ti/Al couples induced by furnace annealing were investigated (at elevated temperature) using large-grained Al substrates and vacuum-evaporated bilayers of both sequences. 4 He MeV backscattering spectrometry was principally used to monitor the reactions. Profiles of oxygen impurity were obtained by elastic 16 O(alpha,alpha)16 O resonant scattering. In the range of 460–515 °C, TiAl3 forms as a laterally uniform layer at the Ti/Al interface. The thickness of this compound layer increases as (annealing time)1/2. The activation energy is 1.9–2.0±0.1 eV. For evaporated bilayers on an oxidized Si substrate, the sequence of the bilayers does not effect the growth mechanism of TiAl3 , but the growth rate of samples with the Ti on top is lower than that of samples with Al on top, that is, oxygen in Ti/Al samples can reduce the reaction rate by decreasing the pre-exponential factor. Oxygen already contained in the Ti film and oxygen from the annealing ambient are incorporated in the growing TiAl3 compound during thermal annealing. In addition, a TiAl3 layer also forms at the free Ti surface during vacuum annealing when the oxygen-containing contaminants in the ambient are minimized. So far, we succeeded in accomplishing this only for large-grained Al substrates. We conclude that the formation of the TiAl3 compound at the surface is controlled by nucleation and depends sensitively on the condition of the surface layer of the Ti film

Amosphous diffusion barriers

Amorphous W-Zr and W-N alloys were investigated as diffusion barriers in silicon metallization schemes. Data were presented showing that amorphous W-Zr crystallizes at 900 C, which is 200 C higher than amorphous W-Ni films, and that both films react with metallic overlayers at temperatures far below the crystllization temperature. Also, W-N alloys (crystalline temperature of 600 C) were successfully incorporated as a diffusion barrier in contact structures with both Al and Ag overlayers. The thermal stability of the electrical characteristics of shallow n(+)p junctions significantly improved by incorporating W-N layers in the contact system. One important fact demonstated was the critical influence of the deposition parameters during formation of these carriers

Pressure Induced Hydration Dynamics of Membranes

Pressure-jump initiated time-resolved x-ray diffraction studies of dynamics of the hydration of the hexagonal phase in biological membranes show that (i) the relaxation of the unit cell spacing is non-exponential in time; (ii) the Bragg peaks shift smoothly to their final positions without significant broadening or loss in crystalline order. This suggests that the hydration is not diffusion limited but occurs via a rather homogeneous swelling of the whole lattice, described by power law kinetics with an exponent $\beta = 1.3 \pm 0.2$.Comment: REVTEX 3, 10 pages,3 figures(available on request),#

Driven Rydberg atoms reveal quartic level repulsion

The dynamics of Rydberg states of a hydrogen atom subject simultaneously to uniform static electric field and two microwave fields with commensurate frequencies is considered in the range of small fields amplitudes. In the certain range of the parameters of the system the classical secular motion of the electronic ellipse reveals chaotic behavior. Quantum mechanically, when the fine structure of the atom is taken into account, the energy level statistics obey predictions appropriate for the symplectic Gaussian random matrix ensemble.Comment: 4 pages, 3 figures, accepted for publication in Phys. Rev. Let

Lycium barbarum Polysaccharide Improves Bipolar Pulse Current-Induced Microglia Cell Injury Through Modulating Autophagy

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