Совершенствование системы водоотведения на предприятии по производству электротехнических изделий

Целью исследования является разработка мероприятий по совершенствованию системы водоотведения на предприятии по производству электротехнических изделий. Объектом исследования в данной работе является система водоотведения на Томском электротехническом заводе (ТЭТЗ).The aim of the study is to develop measures to improve the drainage system on the plant for the production of electrical products. The object of study in this work is the drainage system in the Tomsk electrotechnical plant (TETZ). In the project the calculations of the main devices, the issues of economic feasibility implementation of the proposed solutions and social responsibility

Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells

In high-efficiency a-Si : H based stacked cells, at least one of the two layers that form the internal n/p junction has preferentially to be microcrystalline so as to obtain sufficient recombination at the junction [1–6]. The crucial point is the nucleation of a very thin μc-Si : H layer on an amorphous (i-layer) substrate [2, 4]. In this study, fast nucleation is induced through the treatment of the amorphous substrate by a CO2 plasma. The resulting n-layers with a high crystalline fraction were, however, found to reduce the Voc when incorporated in tandem cells. The reduction of the Voc could be restored only by a precise control of the crystalline fraction of the n-layer. As a technologically more feasible alternative, we propose a new, combined n-layer, consisting of a first amorphous layer for a high Voc, and a second microcrystalline layer, induced by CO2 treatment, for a sufficient recombination at the n/p junction. Resulting tandem cells show no Voc losses compared to two standard single cells, and an efficient recombination of the carriers at the internal junction as proved by the low series resistance (15 Ωcm2) and the high FF ( 75%) of the stacked cells

Interfaces in a-Si:H Solar cell structures

Stiebig H, Siebke F, Beyer W, Beneking C, Rech B, Wagner H. Interfaces in a-Si:H Solar cell structures. Solar Energy Materials and Solar Cells. 1997;48(1-4):351-363