9 research outputs found

    Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates

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    The MBE growth and properties of InGaAs/InAlAs heterostructures on vicinal (111)B InP substrates have been investigated. Electroabsorption modulator pin MQW heterostructures were grown on both (100) and vicinal (111)B InP substrates, pin diodes were processed and their photocurrent spectra at 300 K were compared. The spectra of (100) structures exhibited many intense excitonic transitions and applied reverse bias resulted to strong red shift of the absorption edge. The photocurrent spectra of similar (111) structures, however, appeared rather featureless with less abrupt absorption edge. These results on (111) are related to crystal disorder and quantum well variations resulting from InAlAs surface step-bunching and InGaAs, InAlAs compositional modulations

    Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates

    No full text
    The MBE growth and properties of InGaAs/InAlAs heterostructures on vicinal (111)B InP substrates have been investigated. Electroabsorption modulator pin MQW heterostructures were grown on both (100) and vicinal (111)B InP substrates, pin diodes were processed and their photocurrent spectra at 300 K were compared. The spectra of (100) structures exhibited many intense excitonic transitions and applied reverse bias resulted to strong red shift of the absorption edge. The photocurrent spectra of similar (111) structures, however, appeared rather featureless with less abrupt absorption edge. These results on (111) are related to crystal disorder and quantum well variations resulting from InAlAs surface step-bunching and InGaAs, InAlAs compositional modulations

    Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates

    No full text
    The MBE growth and properties of InGaAs/InAlAs heterostructures on vicinal (111)B InP substrates have been investigated. Electroabsorption modulator pin MQW heterostructures were grown on both (100) and vicinal (111)B InP substrates, pin diodes were processed and their photocurrent spectra at 300 K were compared. The spectra of (100) structures exhibited many intense excitonic transitions and applied reverse bias resulted to strong red shift of the absorption edge. The photocurrent spectra of similar (111) structures, however, appeared rather featureless with less abrupt absorption edge. These results on (111) are related to crystal disorder and quantum well variations resulting from InAlAs surface step-bunching and InGaAs, InAlAs compositional modulations

    Cutting edge: crucial role of IL-1 and IL-23 in the innate IL-17 response of peripheral lymph node NK1.1- invariant NKT cells to bacteria.

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    International audienceWe have shown previously that peripheral lymph node-resident retinoic acid receptor-related orphan receptor Îłt(+) NK1.1(-) invariant NKT (iNKT) cells produce IL-17A independently of IL-6. In this study, we show that the concomitant presence of IL-1 and IL-23 is crucial to induce a rapid and sustained IL-17A/F and IL-22 response by these cells that requires TCR-CD1d interaction and partly relies on IL-23-mediated upregulation of IL-23R and IL-1R1 expression. We further show that IL-1 and IL-23 produced by pathogen-associated molecular pattern-stimulated dendritic cells induce this response from NK1.1(-) iNKT cells in vitro, involving mainly TLR2/4-signaling pathways. Finally, we found that IL-17A production by these cells occurs very early and transiently in vivo in response to heat-killed bacteria. Overall, our study indicates that peripheral lymph node NK1.1(-) iNKT cells could be a source of innate Th17-related cytokines during bacterial infections and supports the hypothesis that they are able to provide an efficient first line of defense against bacterial invasion
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