Multiparadigm modeling of dynamical crack propagation in silicon using a reactive force field

We report a study of dynamic cracking in a silicon single crystal in which the ReaxFF reactive force field is used for several thousand atoms near the crack tip, while more than 100 000 atoms are described with a nonreactive force field. ReaxFF is completely derived from quantum mechanical calculations of simple silicon systems without any empirical parameters. Our results reproduce experimental observations of fracture in silicon including changes in crack dynamics for different crack orientations

Threshold Crack Speed Controls Dynamical Fracture of Silicon Single Crystals

Fracture experiments of single silicon crystals reveal that after the critical fracture load is reached, the crack speed jumps from zero to [approximate]2 km/sec, indicating that crack motion at lower speeds is forbidden. This contradicts classical continuum fracture theories predicting a continuously increasing crack speed with increasing load. Here we show that this threshold crack speed may be due to a localized phase transformation of the silicon lattice from 6-membered rings to a 5–7 double ring at the crack tip

Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.Comment: Accepted for publication in Journal of Applied Physics. Comments always welcome, email [email protected], [email protected]

Modeling Single Electron Transfer in Si:P Double Quantum Dots

Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behavior and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime.Comment: 11 pages, 7 figures, submitted to Nanotechnolog

The Research Unit VolImpact: Revisiting the volcanic impact on atmosphere and climate – preparations for the next big volcanic eruption

This paper provides an overview of the scientific background and the research objectives of the Research Unit “VolImpact” (Revisiting the volcanic impact on atmosphere and climate – preparations for the next big volcanic eruption, FOR 2820). VolImpact was recently funded by the Deutsche Forschungsgemeinschaft (DFG) and started in spring 2019. The main goal of the research unit is to improve our understanding of how the climate system responds to volcanic eruptions. Such an ambitious program is well beyond the capabilities of a single research group, as it requires expertise from complementary disciplines including aerosol microphysical modelling, cloud physics, climate modelling, global observations of trace gas species, clouds and stratospheric aerosols. The research goals will be achieved by building on important recent advances in modelling and measurement capabilities. Examples of the advances in the observations include the now daily near-global observations of multi-spectral aerosol extinction from the limb-scatter instruments OSIRIS, SCIAMACHY and OMPS-LP. In addition, the recently launched SAGE III/ISS and upcoming satellite missions EarthCARE and ALTIUS will provide high resolution observations of aerosols and clouds. Recent improvements in modeling capabilities within the framework of the ICON model family now enable simulations at spatial resolutions fine enough to investigate details of the evolution and dynamics of the volcanic eruptive plume using the large-eddy resolving version, up to volcanic impacts on larger-scale circulation systems in the general circulation model version. When combined with state-of-the-art aerosol and cloud microphysical models, these approaches offer the opportunity to link eruptions directly to their climate forcing. These advances will be exploited in VolImpact to study the effects of volcanic eruptions consistently over the full range of spatial and temporal scales involved, addressing the initial development of explosive eruption plumes (project VolPlume), the variation of stratospheric aerosol particle size and radiative forcing caused by volcanic eruptions (VolARC), the response of clouds (VolCloud), the effects of volcanic eruptions on atmospheric dynamics (VolDyn), as well as their climate impact (VolClim)

Self-aligned fabrication process for silicon quantum computer devices

We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal to use the nuclear spins of 31P donors in 28Si as qubits, controlled by metal surface gates and measured using single electron transistors (SETs). The accurate registration of 31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis