Repair of Failing Spirit Lake Outlet Tunnel at Mount St. Helens

The 18 May 1980 eruption of Mount St. Helens resulted in one of the largest debris avalanches recorded in history. The debris avalanche blocked the natural outlet of Spirit Lake. To prevent an uncontrolled and catastrophic lake break-out, the U.S. Army Corps of Engineers (USACE) constructed the Spirit Lake Outlet Tunnel from 1984 to 1985. Because Spirit Lake is located in the Mount St. Helens National Volcanic Monument, the project was transferred to the U.S. Forest Service (USFS) for ownership and management. During original tunnel construction, the most difficulty occurred within the 90-m-wide Julie and Kathy L. shear zone complex. In 1996, tunnel walls within this complex experienced significant convergence, which required major repair along a 30 m segment. During inspections in 2014 and 2015, a 10 m segment at the upstream end of the complex, which had experienced slow heave in the past, was observed to have experienced an increase in heave of approximately 0.6 m, which decreased the hydraulic capacity of the tunnel below acceptable limits. The USACE, in accordance with and with funding from the USFS, designed a repair based on the rib set-shotcrete support system that was used for the 1996 repair. In addition to removing and arresting the heave, the 2015 repair was sized to be compatible with a future potential rehabilitation involving stabilizing and re-grading the invert profile of the Julie and Kathy L. shear zone complex. The 2015 repair construction contract was awarded in September 2015 for $3 million

Compound semiconductor nanocrystals formed by sequential ion implantation

Ion implantation and thermal processing have been used to synthesize compound semiconductor nanocrystals (SiGe, GaAs, and CdSe) in both SiO{sub 2} and (0001) Al{sub 2}O{sub 3}. Equal doses of each constituent are implanted sequentially at energies chosen to give an overlap of the profiles. Subsequent annealing results in precipitation and the formation of compound nanocrystals. In SiO{sub 2} substrates, nanocrystals are nearly spherical and randomly oriented. In Al{sub 2}O{sub 3}, nanocrystals exhibit strong orientation both in-plane and along the surface normal

Similarities and differences in the dolomitization history of two coeval Middle Triassic carbonate platforms, Balaton Highland, Hungary

Dolomitization of platform carbonates is commonly the result of multiphase processes. Documentation of the complex dolomitization history is difficult if completely dolomitized sections are studied. Two Middle Anisian sections representing two coeval carbonate platforms were investigated and compared in the present study. Both sections are made up of meter-scale peritidal–lagoonal cycles with significant pedogenic overprint. One of the sections contains non-dolomitized, partially dolomitized, and completely dolomitized intervals, whereas the other is completely dolomitized. Based on investigations of the partially dolomitized section, penecontemporaneous dolomite formation and/or very early post-depositional dolomitization were identified in various lithofacies types. In shallow subtidal facies, porphyrotopic dolomite was found preferentially in microbial micritic fabrics. Microbially induced dolomite precipitation and/or progressive replacement of carbonate sediments could be interpreted for stromatolites. Cryptocrystalline to very finely crystalline dolomite, probably of pedogenic origin, was encountered in paleosoil horizons. Fabric-destructive dolomite commonly found below these horizons was likely formed via reflux of evaporated seawater. As a result of the different paleogeographic settings of the two platforms, their shallow-burial conditions were significantly different. One of the studied sections was located at the basinward platform margin where pervasive fabric-retentive dolomitization took place in a shallow-burial setting, probably via thermal convection. In contrast, in the area of the other, smaller platform shallow-water carbonates were covered by basinal deposits, preventing fluid circulation and accordingly pervasive shallow-burial dolomitization. In the intermediate to deep burial zone, recrystallization of partially dolomitized limestone and occlusion of newly opened fractures and pores by coarsely crystalline dolomite took place

New insight into damage-related phenomena in Si implanted under extreme conditions

New insight into damage formation in Si(100) during self-ion irradiation is gained from processing under extreme conditions. Dislocations form in the near-surface as a result of lattice relaxation in response to strain produced by precursor defects which are shown to be vacancy-type by positron analysis. A model to account for these defects and their distribution is presented. A novel technique is demonstrated which utilizes a subsequent implantation as a depth specific probe to manipulate the vacancy-type defects. Aspects of damage growth which emerge from the probe results are discussed

Spatially Resolved Mapping of Local Polarization Dynamics in an Ergodic Phase of Ferroelectric Relaxor

Spatial variability of polarization relaxation kinetics in relaxor ferroelectric 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 is studied using time-resolved Piezoresponse Force Microscopy. Local relaxation attributed to the reorientation of polar nanoregions is shown to follow stretched exponential dependence, exp(-(t/tau)^beta), with beta~~0.4, much larger than the macroscopic value determined from dielectric spectra (beta~~0.09). The spatial inhomogeneity of relaxation time distributions with the presence of 100-200 nm "fast" and "slow" regions is observed. The results are analyzed to map the Vogel-Fulcher temperatures on the nanoscale.Comment: 23 pages, 4 figures, supplementary materials attached; to be submitted to Phys. Rev. Let

Through-thickness superconducting and normal-state transport properties revealed by thinning of thick film ex situ YBa2Cu3O7-x coated conductors

A rapid decrease in the critical current density (Jc) of YBa2Cu3O7-x (YBCO) films with increasing film thickness has been observed for multiple YBCO growth processes. While such behavior is predicted from 2D collective pinning models under certain assumptions, empirical observations of the thickness dependence of Jc are believed to be largely processing dependent at present. To investigate this behavior in ex situ YBCO films, 2.0 and 2.9 um thick YBCO films on ion beam assisted deposition (IBAD) - yttria stabilized zirconia (YSZ) substrates were thinned and repeatedly measured for rho(T) and Jc(H). The 2.9 um film exhibited a constant Jc(77K,SF) through thickness of ~1 MA/cm2 while the 2.0 um film exhibited an increase in Jc(77K,SF) as it was thinned. Neither film offered evidence of significant dead layers, suggesting that further increases in critical current can be obtained by growing thicker YBCO layers.Comment: To appear in Applied Physics Letter

Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition

doi:10.1063/1.373643ZnO films were synthesized on GaAs substrates at different growth conditions by pulse laser deposition. High-purity (99.999%) oxygen was used as the ambient gas. The pressure of the ambient oxygen gas for ZnO film growth was varied from 20 to 50 mTorr, and the growth temperature from 300 to 450 °C. ZnO films showed very strong bound exciton peaks located between 3.37 and 3.35 eV. The full width at half maximum of the bound exciton peak is less than 5 meV. These results indicate ZnO films on GaAs substrates can be used for optical devices such as light-emitting diodes. The other significant properties of textured ZnO films on GaAs substrates are described.This work was supported in part by University of Missouri Research Board under Grant No. RB95-061, the U.S. Army Research Office ~Research Triangle Park, N.C.! under Grant No. DAAH04-94-G-0305, and the Office of Naval Research-Electronics Division, Contract No. N00014-99-1-0288

Encapsulated nanocrystals and quantum dots formed by ion beam synthesis

High-dose ion implantation was used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO{sub 2}, {alpha}-Al{sub 2}O{sub 3}, and crystalline Si. When Si nanocrystals are encapsulated in SiO{sub 2}, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism. Compound semiconductor nanocrystals (both Group III-V and Group II-VI) can be formed in these matrices by sequential implantation of he individual constituents, and we discuss their synthesis and some of their physical and optical properties