Motivative Factors of Professional Self-Realization of the Person

Neuropsychologists pay much attention to career guidance for young people who are faced with the challenge of choosing the profession. Numerous studies on motivation and professional determination prove the need to identify individual features of the brain organization of mental functions in the context of psychological support for the educational process at school and career guidance. Neuropsychological research indicates the links between the predominant activity of a certain hemisphere of the brain and professional realization in certain areas. The empirical study was conducted using reliable and valid psycho-diagnostic techniques (“Questionnaire of professional self-realization” by O. M. Kokun (2014; 2016); the “Motivational profile” technique by S. Richie, &amp; P. Martin (2004); correlation analysis). At the stage of qualitative analysis, two groups of subjects with different levels of professional self-realization were identified (using the «ace» method). A visual analysis of the motivational factors profile structure in groups with high and low levels of professional self-realisation demonstrated differences in the graphs configuration and their location, and also provided an opportunity to characterize the psychological motivation characteristics of representatives of each of the groups. Against the general background of communicative self-sufficiency, adaptability and self-confidence, in a group of persons with a high level of professional self-realisation, the dominant motives are constant improvement, recognition by others. Representatives of a group with a low level of the studied phenomenon are interested in the motives of good working conditions and high wages. It has been proved that persons with different levels of professional self-realization differ in the specificity of the dominance of motives.</em

Defects in Hybrid Perovskites: The Secret of Efficient Charge Transport

The interaction of free carriers with defects and some critical defect properties are still unclear in methylammonium lead halide perovskites (MHPs). Here, a multi-method approach is used to quantify and characterize defects in single crystal MAPbI(3), giving a cross-checked overview of their properties. Time of flight current waveform spectroscopy reveals the interaction of carriers with five shallow and deep defects. Photo-Hall and thermoelectric effect spectroscopy assess the defect density, cross-section, and relative (to the valence band) energy. The detailed reconstruction of free carrier relaxation through Monte Carlo simulation allows for quantifying the lifetime, mobility, and diffusion length of holes and electrons separately. Here, it is demonstrated that the dominant part of defects releases free carriers after trapping; this happens without non-radiative recombination with consequent positive effects on the photoconversion and charge transport properties. On the other hand, shallow traps decrease drift mobility sensibly. The results are the key for the optimization of the charge transport properties and defects in MHP and contribute to the research aiming to improve perovskite stability. This study paves the way for doping and defect control, enhancing the scalability of perovskite devices with large diffusion lengths and lifetimes

Electrical and optical properties of SiC single crystals

Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors

Electrical and optical properties of SiC single crystals

Silicon carbide is a semiconductor with a wide bandgap of up to 3.2 eV and is capable of operating in extreme conditions, high temperature and high energy modes. This work focuses on the investigation of electrical and optical properties of monocrystalline SiC by various methods including Raman spectroscopy, volt-ampere characteristics, L-TCT and spectroscopic techniques. The adhesion of contacts and the influence of different contact materials on the ability to detect ionizing radiation are also studied to optimize the technology of preparation of quality SiC-based radiation detectors

Defects in Hybrid Perovskites: The Secret of Efficient Charge Transport (Adv. Funct. Mater. 48/2021)

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