159,215 research outputs found
ELSA and the frontiers of astrometry
ELSA stands for the ambitious goal of `European Leadership in Space
Astrometry'. In this closing contribution I will examine how the ELSA network
has advanced this goal. I also look ahead to the time when the Gaia data will
be published and consider what needs to be done to maintain European
leadership.Comment: Closing remarks at the ELSA conference "Gaia: at the frontiers of
astrometry". Proceedings editors: C. Turon, F. Arenou & F. Meynadie
Resonant relativistic corrections and the A_y problem
We study relativistic corrections to nuclear interactions caused by boosting
the two-nucleon interaction to a frame in which their total momentum does not
vanish. These corrections induce a change in the computed value of the
neutron-deuteron analyzing power A_y that is estimated using the plane-wave
impulse approximation. This allows a transparent analytical calculation that
demonstrates the significance of relativistic corrections. Faddeev calculations
are however needed to conclude on the A_y puzzle.Comment: 8 pages, 2 figures, minor addition, to appear in Phys. Rev.
The Al Gamma-ray Line from Massive-Star Regions
The measurement of gamma rays from the diffuse afterglow of radioactivity
originating in massive-star nucleosynthesis is considered a laboratory for
testing models, when specific stellar groups are investigated, at known
distance and with well-constrained stellar population. Regions which have been
exploited for such studies include Cygnus, Carina, Orion, and
Scorpius-Centaurus. The Orion region hosts the Orion OB1 association and its
subgroups at about 450~pc distance. We report the detection of Al gamma
rays from this region with INTEGRAL/SPI.Comment: Contribution to Symposium "Nuclei in the Cosmos XIV", Niigata, Japan,
Jun 2016; 3 pages, 2 figures; accepted for publication in JPS (Japan Physical
Society) Conference Proceedings http://jpscp.jps.jp
Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor
Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings
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