Erbium-doped laser with multi-segmented silicon nitride structure

Optical Fiber Communication Conference 2014 San Francisco, California United States 9–13 March 2014 ISBN: 978-1-55752-993-0 From the session: Novel Optical Schemes (W4E)This is the author accepted manuscript. The final version is available from the publisher via the DOI in this record.We report on DFB and DBR lasers formed from a wavelength insensitive multisegmented silicon nitride waveguide. Using a five-segment waveguide, we obtain lasing in erbium-doped DBR (-3.6 dBm) and DFB (-7.3 dBm) cavities. © OSA 2014

Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform

This is the final published version. Available from the publisher via the DOI in this record.Event: Silicon Photonics XIII; 1053712, SPIE OPTO, 2018, San Francisco, California, United StatesWe report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950–2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.This work is supported by the Defense Advanced Research Projects Agency (DARPA) Microsystems Technology Office’s (MTO) E-PHI (HR0011-12-2-0007) project. N. Li acknowledges a fellowship from the Agency of Science, Technology and Research (A*STAR), Singapore

Prognostic model to predict postoperative acute kidney injury in patients undergoing major gastrointestinal surgery based on a national prospective observational cohort study.

Background: Acute illness, existing co-morbidities and surgical stress response can all contribute to postoperative acute kidney injury (AKI) in patients undergoing major gastrointestinal surgery. The aim of this study was prospectively to develop a pragmatic prognostic model to stratify patients according to risk of developing AKI after major gastrointestinal surgery. Methods: This prospective multicentre cohort study included consecutive adults undergoing elective or emergency gastrointestinal resection, liver resection or stoma reversal in 2-week blocks over a continuous 3-month period. The primary outcome was the rate of AKI within 7 days of surgery. Bootstrap stability was used to select clinically plausible risk factors into the model. Internal model validation was carried out by bootstrap validation. Results: A total of 4544 patients were included across 173 centres in the UK and Ireland. The overall rate of AKI was 14·2 per cent (646 of 4544) and the 30-day mortality rate was 1·8 per cent (84 of 4544). Stage 1 AKI was significantly associated with 30-day mortality (unadjusted odds ratio 7·61, 95 per cent c.i. 4·49 to 12·90; P < 0·001), with increasing odds of death with each AKI stage. Six variables were selected for inclusion in the prognostic model: age, sex, ASA grade, preoperative estimated glomerular filtration rate, planned open surgery and preoperative use of either an angiotensin-converting enzyme inhibitor or an angiotensin receptor blocker. Internal validation demonstrated good model discrimination (c-statistic 0·65). Discussion: Following major gastrointestinal surgery, AKI occurred in one in seven patients. This preoperative prognostic model identified patients at high risk of postoperative AKI. Validation in an independent data set is required to ensure generalizability

Frequency Domain Spectroscopy in Rare-Earth-Doped Gain Media

Many spectroscopic techniques today rely on time-resolved measurements under short excitation pulses. Instead of using a chopped pump excitation, or ultrafast optical pulses, we expand on and apply the previously developed set of frequency domain methods to analyze the population level dynamics in rare-earth-doped media. By identifying the full frequency response of the gain medium, this method can accurately yield excited state lifetimes and can also be used to estimate transition cross-sections. The accuracy of the frequency domain methods are verified with Er3+-and Tm3+-doped fibers, and an Al2O3:Tm3+ waveguide, recovering similar results as reported by time-resolved techniques. The complete frequency domain model presented here can be used in characterization of novel optical gain media, and can provide insights into population dynamics in solid state amplifiers and lasers

Athermal synchronization of laser source with WDM filter in a silicon photonics platform.

In an optical interconnect circuit, microring resonators (MRRs) are commonly used in wavelength division multiplexing systems. To make the MRR and laser synchronized, the resonance wavelength of the MRR needs to be thermally controlled, and the power consumption becomes significant with a high-channel count. Here, we demonstrate an athermally synchronized rare-earth-doped laser and MRR. The laser comprises a Si3N4 based cavity covered with erbium-doped Al2O3 to provide gain. The low thermo-optic coefficient of Al2O3 and Si3N4 and the comparable thermal shift of the effective index in the laser and microring cross-sections enable lasing and resonance wavelength synchronization over a wide range of temperatures. The power difference between matched and unmatched channels remains greater than 15 dB from 20 to 50 °C due to a synchronized wavelength shift of 0.02 nm/°C. The athermal synchronization approach reported here is not limited to microring filters but can be applied to any Si3N4 filter with integrated lasers using rare earth ion doped Al2O3 as a gain medium to achieve system-level temperature control free operation

Monolithically-integrated distributed feedback laser compatible with CMOS processing.

An optically-pumped, integrated distributed feedback laser is demonstrated using a CMOS compatible process, where a record-low-temperature deposited gain medium enables integration with active devices such as modulators and detectors. A pump threshold of 24.9 mW and a slope efficiency of 1.3 % is demonstrated at the lasing wavelength of 1552.98 nm. The rare-earth-doped aluminum oxide, used as the gain medium in this laser, is deposited by a substrate-bias-assisted reactive sputtering process. This process yields optical quality films with 0.1 dB/cm background loss at the deposition temperature of 250 °C, and therefore is fully compatible as a back-end-of-line CMOS process. The aforementioned laser's performance is comparable to previous lasers having gain media fabricated at much higher temperatures (> 550 °C). This work marks a crucial step towards monolithic integration of amplifiers and lasers in silicon microphotonic systems

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region