Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices

N 2 + ion bombardment effect on the band gap of anatase TiO2 ultrathin films

International audienc

Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment and ab initio calculations

Backward/near-forward Raman scattering and ab initio Raman/phonon calculations are combined, together with x-ray diffraction and ellipsometry measurements to further inform the debate on the compact phonon behavior of the II–VI Cd1−xZnxTe alloy. The compacity favors the coupling of polar optic modes in both the transverse and longitudinal symmetries via the related (EL,T) long-wave electric fields. The EL-coupling achieves maximum in the Zn-dilute limit, which enhances the (upper) ZnTe-like (impurity) mode at the expense of the (lower) CdTe-like (matrix-like) one, leaving the impression of a unique {Cd-Te,Zn−Te}-mixed longitudinal optic (LO) phonon across most of the composition domain. However, the purely mechanical (non-polar) transverse optic (PM-TO) phonons, that hardly couple, reveal an underlying three-mode {1 × (Cd-Te),2 × (Zn-Te)} fine structure that distinguishes between Zn–Te vibrations in Zn- and Cd-like environments up to second neighbors. Further refinement arises by exploring the phonon–polariton (i.e., polar-TO) regime at large Zn content. On reducing the scattering angle, the ET-coupling develops into a sequential softening of phonon–polaritons from ZnTe- down to CdTe-like ones, which transiently unveils a bimodal pattern behind the Cd–Te signal. Altogether, this results in a (rare) canonical four-mode {2 × (Cd-Te),2 × (Zn-Te)} percolation pattern for Cd1−xZnxTe, i.e., a close II–VI replica of the twin III−V In1−xGaxAs one—yet differing by two apparent LO modes and a sensitivity of bond vibrations limited to first-neighbors. Retrospectively, the difference in sensitivity of bond vibrations to the local environment between In1−xGaxAs (limited to first neighbors) and Cd1−xZnxTe (extending up to second neighbors) emerges as a rule throughout common (covalent) III–V and (ionic) II–VI semiconductor alloys