Disentangling magnetic hardening and molecular spin chain contributions to exchange bias in ferromagnet/molecule bilayers

We performed SQUID and FMR magnetometry experiments to clarify the relationship between two reported magnetic exchange effects arising from interfacial spin-polarized charge transfer within ferromagnetic metal (FM)/molecule bilayers: the magnetic hardening effect, and spinterface-stabilized molecular spin chains. To disentangle these effects, both of which can affect the FM magnetization reversal, we tuned the metal phthalocyanine molecule central site's magnetic moment to selectively enhance or suppress the formation of spin chains within the molecular film. We find that both effects are distinct, and additive. In the process, we 1) extended the list of FM/molecule candidate pairs that are known to generate magnetic exchange effects, 2) experimentally confirmed the predicted increase in anisotropy upon molecular adsorption; and 3) showed that spin chains within the molecular film can enhance magnetic exchange. This magnetic ordering within the organic layer implies a structural ordering. Thus, by distengangling the magnetic hardening and exchange bias contributions, our results confirm, as an echo to progress regarding inorganic spintronic tunnelling, that the milestone of spintronic tunnelling across structurally ordered organic barriers has been reached through previous magnetotransport experiments. This paves the way for solid-state devices studies that exploit the quantum physical properties of spin chains, notably through external stimuli.Comment: Non

Encoding information onto the charge and spin state of a paramagnetic atom using MgO tunnelling spintronics

An electrical current that flows across individual atoms or molecules can generate exotic quantum-based behavior, from memristive effects to Coulomb blockade and the promotion of quantum excited states. These fundamental effects typically appear one at a time in model junctions built using atomic tip or lateral techniques. So far, however, a viable industrial pathway for such discrete state devices has been lacking. Here, we demonstrate that a commercialized device platform can serve as this industrial pathway for quantum technologies. We have studied magnetic tunnel junctions with a MgO barrier containing C atoms. The paramagnetic localized electrons due to individual C atoms generate parallel nanotransport paths across the micronic device as deduced from magnetotransport experiments. Coulomb blockade effects linked to tunnelling magnetoresistance peaks can be electrically controlled, leading to a persistent memory effect. Our results position MgO tunneling spintronics as a promising platform to industrially implement quantum technologies

Robust spin crossover and memristance across a single molecule

A nanoscale molecular switch can be used to store information in a single molecule. Although the switching process can be detected electrically in the form of a change in the molecule's conductance, adding spin functionality to molecular switches is a key concept for realizing molecular spintronic devices. Here we show that iron-based spin-crossover molecules can be individually and reproducibly switched between a combined high-spin, high-conduction state and a low-spin, low-conduction state, provided the individual molecule is decoupled from a metallic substrate by a thin insulating layer. These results represent a step to achieving combined spin and conduction switching functionality on the level of individual molecules

First glimpse of the soft x-ray induced excited spin-state trapping effect dynamics on spin cross-over molecules

The dynamics of the soft x-ray induced excited spin state trapping (SOXIESST) effect of Fe(phen)(2)(NCS)(2) (Fe-phen) powder have been investigated by x-ray absorption spectroscopy (XAS) using the total electron yield method, in a wide temperature range. The low-spin (LS) state is excited into the metastable high-spin (HS) state at a rate that depends on the intensity of the x-ray illumination it receives, and both the temperature and the intensity of the x-ray illumination will affect the maximum HS proportion that is reached. We find that the SOXIESST HS spin state transforms back to the LS state at a rate that is similar to that found for the light induced excited spin state trapping (LIESST) effect. We show that it is possible to use the SOXIESST effect in combination with the LIESST effect to investigate the influence of cooperative behavior on the dynamics of both effects. To investigate the impact of molecular cooperativity, we compare our results on Fe-phen with those obtained for Fe[Me(2)Pyrz](3)BH(2) (Fe-pyrz) powder, which exhibits a similar thermal transition temperature but with a hysteresis. We find that, while the time constant of the dynamic is identical for both molecules, the SOXIESST effect is less efficient at exciting the HS state in Fe-pyrz than in Fe-phen. (C) 2013 AIP Publishing LLC

Hysteresis and change of transition temperature in thin films of Fe{[Me(2)Pyrz](3)BH}(2), a new sublimable spin-crossover molecule

Thin films of the spin-crossover (SCO) molecule Fe{[Me(2)Pyrz](3)BH}(2) (Fe-pyrz) were sublimed on Si/SiO2 and quartz substrates, and their properties investigated by X-ray absorption and photo-emission spectroscopies, optical absorption, atomic force microscopy, and superconducting quantum interference device. Contrary to the previously studied Fe(phen)(2)(NCS)(2), the films are not smooth but granular. The thin films qualitatively retain the typical SCO properties of the powder sample (SCO, thermal hysteresis, soft X-ray induced excited spin-state trapping, and light induced excited spin-state trapping) but present intriguing variations even in micrometer-thick films: the transition temperature decreases when the thickness is decreased, and the hysteresis is affected. We explain this behavior in the light of recent studies focusing on the role of surface energy in the thermodynamics of the spin transition in nano-structures. In the high-spin state at room temperature, the films have a large optical gap (similar to 5 eV), decreasing at thickness below 50 nm, possibly due to film morphology. (C) 2015 AIP Publishing LLC

Vers la spintronique organique

Physique de la matière condensé