A Microwave Josephson Refrigerator

We present a microwave quantum refrigeration principle based on the Josephson effect. When a superconducting quantum interference device (SQUID) is pierced by a time-dependent magnetic flux, it induces changes in the macroscopic quantum phase and an effective finite bias voltage appears across the SQUID. This voltage can be used to actively cool well below the lattice temperature one of the superconducting electrodes forming the interferometer. The achievable cooling performance combined with the simplicity and scalability intrinsic to the structure pave the way to a number of applications in quantum technology.Comment: 6 pages, 3 figure

Parasitic effects in SQUID-based radiation comb generators

We study several parasitic effects on the implementation of a Josephson radiation comb generator (JRCG) based on a dc superconducting quantum interference device (SQUID) driven by an external magnetic field. This system can be used as a radiation generator similarly to what is done in optics and metrology, and allows one to generate up to several hundreds of harmonics of the driving frequency. First we take into account how assuming a finite loop geometrical inductance and junction capacitance in each SQUID may alter the operation of this device. Then, we estimate the effect of imperfections in the fabrication of an array of SQUIDs, which is an unavoidable source of errors in practical situations. We show that the role of the junction capacitance is in general negligible, whereas the geometrical inductance has a beneficial effect on the performance of the device. The errors on the areas and junction resistance asymmetries may deteriorate the performance, but their effect can be limited up to a large extent with a suitable choice of fabrication parameters.Comment: 9 pages, 9 figure

Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime

Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the electron transmission through the nanowire remains elastic. In the limit where the nanowire length exceeds the electron localization length, we derive three analytical expressions for the typical value of the thermopower as a function of the gate potential, in the cases where the electron transport takes place (i) inside the impurity band of the nanowire, (ii) around its band edges and eventually (iii) outside its band. We obtain a very large enhancement of the typical thermopower at the band edges, while the sample to sample fluctuations around the typical value exhibit a sharp crossover from a Lorentzian distribution inside the impurity band towards a Gaussian distribution as the band edges are approached.Comment: 13 pages, 8 figures, final version as publishe

Absorbing/Emitting Phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: Arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.Comment: 9 pages, 11 figure

Thermoelectric efficiency of three-terminal quantum thermal machines

The efficiency of a thermal engine working in linear response regime in a multi-terminals configuration is discussed. For the generic three-terminal case, we provide a general definition of local and non-local transport coefficients: electrical and thermal conductances, and thermoelectric powers. Within the Onsager formalism, we derive analytical expressions for the efficiency at maximum power, which can be written in terms of generalized figures of merit. Also, using two examples, we investigate numerically how a third terminal could improve the performance of a quantum system, and under which conditions non-local thermoelectric effects can be observed.Comment: 21 pages, 10 figures. Final versio

Separation of heat and charge currents for boosted thermoelectric conversion

In a multi-terminal device the (electronic) heat and charge currents can follow different paths. In this paper we introduce and analyse a class of multi-terminal devices where this property is pushed to its extreme limits, with charge $and$ heat currents flowing in different reservoirs. After introducing the main characteristics of such $heat-charge$ $current$ $separation$ regime we show how to realise it in a multi-terminal device with normal and superconducting leads. We demonstrate that this regime allows to control independently heat and charge flows and to greatly enhance thermoelectric performances at low temperatures. We analyse in details a three-terminal setup involving a superconducting lead, a normal lead and a voltage probe. For a generic scattering region we show that in the regime of heat-charge current separation both the power factor and the figure of merit $ZT$ are highly increased with respect to a standard two-terminal system. These results are confirmed for the specific case of a system consisting of three coupled quantum dots.Comment: 12 pages, 8 figure

Gate-modulated thermopower of disordered nanowires: II. Variable-range hopping regime

International audienceWe study the thermopower of a disordered nanowire in the field effect transistorconfiguration. After a first paper devoted to the elastic coherent regime (Bosisio R., Fleury G.and Pichard J.-L. 2014 New J. Phys. 16 035004), we consider here the inelastic activated regimetaking place at higher temperatures. In the case where charge transport is thermally assisted byphonons (Mott Variable Range Hopping regime), we use the Miller-Abrahams random resistornetwork model as recently adapted by Jiang et al. for thermoelectric transport. This approachpreviously used to study the bulk of the nanowire impurity band is extended for studying itsedges. In this limit, we show that the typical thermopower is largely enhanced, attaining valueslarger that 10 kB/e ∼ 1 mV K−1 and exhibiting a non-trivial behaviour as a function of thetemperature. A percolation theory by Zvyagin extended to disordered nanowires allows us toaccount for the main observed edge behaviours of the thermopower

Using Activated Transport in Parallel Nanowires for Energy Harvesting and Hot Spot Cooling

12 pages, 8 figures, 4 appendicesInternational audienceWe study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we compute the thermopower $S$, the electrical conductance $G$, and the electronic thermal conductance $K^e$ of the device. We investigate how those quantities depend on the position -- which can be tuned with a back gate -- of the nanowire impurity band with respect to the equilibrium electrochemical potential. We show that large power factors can be reached near the band edges, when $S$ self-averages to large values while $G$ is small but scales with the number of wires. Calculating the amount of heat exchanged locally between the electrons inside the nanowires and the phonons of the environment, we show that phonons are mainly absorbed near one electrode and emitted near the other when a charge current is driven through the nanowires near their band edges. This phenomenon could be exploited for a field control of the heat exchange between the phonons and the electrons at submicron scales in electronic circuits. It could be also used for cooling hot spots

Nanoscale phase-engineering of thermal transport with a Josephson heat modulator

Macroscopic quantum phase coherence has one of its pivotal expressions in the Josephson effect [1], which manifests itself both in charge [2] and energy transport [3-5]. The ability to master the amount of heat transferred through two tunnel-coupled superconductors by tuning their phase difference is the core of coherent caloritronics [4-6], and is expected to be a key tool in a number of nanoscience fields, including solid state cooling [7], thermal isolation [8, 9], radiation detection [7], quantum information [10, 11] and thermal logic [12]. Here we show the realization of the first balanced Josephson heat modulator [13] designed to offer full control at the nanoscale over the phase-coherent component of thermal currents. Our device provides magnetic-flux-dependent temperature modulations up to 40 mK in amplitude with a maximum of the flux-to-temperature transfer coefficient reaching 200 mK per flux quantum at a bath temperature of 25 mK. Foremost, it demonstrates the exact correspondence in the phase-engineering of charge and heat currents, breaking ground for advanced caloritronic nanodevices such as thermal splitters [14], heat pumps [15] and time-dependent electronic engines [16-19].Comment: 6+ pages, 4 color figure