Analytical description of spin-Rabi oscillation controlled electronic transitions rates between weakly coupled pairs of paramagnetic states with S=1/2

We report on an analytical description of spin-dependent electronic transition rates which are controlled by a radiation induced spin-Rabi oscillation of weakly spin-exchange and spin-dipolar coupled paramagnetic states (S=1/2). The oscillation components (the Fourier content) of the net transition rates within spin-pair ensembles are derived for randomly distributed spin resonances with account of a possible correlation between the two distributions that correspond to the two individual pair partners. The results presented here show that when electrically or optically detected Rabi spectroscopy is conducted under an increasing driving field B_ 1, the Rabi spectrum evolves from a single resonance peak at s=\Omega_R, where \Omega_R=\gamma B_1 is the Rabi frequency (\gamma is the gyromagnetic ratio), to three peaks at s= \Omega_R, s=2\Omega_R, and at low s<< \Omega_R. The crossover between the two regimes takes place when \Omega_R exceeds the expectation value \delta_0 of the difference of the Zeeman energies within the pairs, which corresponds to the broadening of the magnetic resonance lines in the presence of disorder caused by hyperfine field or distributions of Lande g-factors. We capture this crossover by analytically calculating the shapes of all three peaks at arbitrary relation between \Omega_R and \delta_0. When the peaks are well-developed their widths are \Delta s ~ \delta_0^2/\Omega_R.Comment: 10 page, 5 figure

Characterization of Iridium Coated Rhenium Used in High-Temperature, Radiation-Cooled Rocket Thrusters

Materials used for radiation-cooled rocket thrusters must be capable of surviving under extreme conditions of high-temperatures and oxidizing environments. While combustion efficiency is optimized at high temperatures, many refractory metals are unsuitable for thruster applications due to rapid material loss from the formation of volatile oxides. This process occurs during thruster operation by reaction of the combustion products with the material surface. Aerojet Technical Systems has developed a thruster cone chamber constructed of Re coated with Ir on the inside surface where exposure to the rocket exhaust occurs. Re maintains its structural integrity at high temperature and the Ir coating is applied as an oxidation barrier. Ir also forms volatile oxide species (IrO2 and IrO3) but at a considerably slower rate than Re. In order to understand the performance limits of Ir-coated Re thrusters, we are investigating the interdiffusion and oxidation kinetics of Ir/Re. The formation of iridium and rhenium oxides has been monitored in situ by Raman spectroscopy during high temperature exposure to oxygen. For pure Ir, the growth of oxide films as thin as approximately 200 A could be easily detected and the formation of IrO2 was observed at temperatures as low as 600 C. Ir/Re diffusion test specimens were prepared by magnetron sputtering of Ir on Re substrates. Concentration profiles were determined by sputter Auger depth profiles of the heat treated specimens. Significant interdiffusion was observed at temperatures as low as 1000 C. Measurements of the activation energy suggest that below 1350 C, the dominant diffusion path is along defects, most likely grain boundaries, rather than bulk diffusion through the grains. The phases that form during interdiffusion have been examined by x ray diffraction. Analysis of heated test specimens indicates that the Ir-Re reaction produces a solid solution phase of Ir dissolved in the HCP structure of Re

Slow Hopping and Spin Dephasing of Coulombically Bound Polaron Pairs in an Organic Semiconductor at Room Temperature

Polaron pairs are intermediate electronic states that are integral to the optoelectronic conversion process in organic semiconductors. Here, we report on electrically detected spin echoes arising from direct quantum control of polaron pair spins in an organic light-emitting diode at room temperature. This approach reveals phase coherence on a microsecond time scale, and offers a direct way to probe charge recombination and dissociation processes in organic devices, revealing temperature-independent intermolecular carrier hopping on slow time scales. In addition, the long spin phase coherence time at room temperature is of potential interest for developing quantum-enhanced sensors and information processing systems which operate at room temperature

T1T_1- and T2T_2-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for [$^{31}$P] = 10$^{15}$ $\mathrm{cm}^{-3}$ and [$^{31}$P] = 10$^{16}$ $\mathrm{cm}^{-3}$ at about liquid $^4$He temperatures ($T = 5$ $\mathrm{K} - 15$ $\mathrm{K}$). Using pulsed electrically detected magnetic resonance (pEDMR), spin--dependent transitions between the \Phos donor state and two distinguishable interface states are observed, namely (i) \Pb centers which can be identified by their characteristic anisotropy and (ii) a more isotropic center which is attributed to E$^\prime$ defects of the \sio bulk close to the interface. Correlation measurements of the dynamics of spin--dependent recombination confirm that previously proposed transitions between \Phos and the interface defects take place. The influence of these electronic near--interface transitions on the \Phos donor spin coherence time $T_2$ as well as the donor spin--lattice relaxation time $T_1$ is then investigated by comparison of spin Hahn--echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that both $T_2$ and $T_1$ of \Phos donor electrons spins in proximity of energetically lower interface states at $T\leq 13$ K are reduced by several orders of magnitude

Seasonal variability of the warm Atlantic Water layer in the vicinity of the Greenland shelf break

The warmest water reaching the east and west coast of Greenland is found between 200?m and 600?m. Whilst important for melting Greenland's outlet glaciers, limited winter observations of this layer prohibit determination of its seasonality. To address this, temperature data from Argo profiling floats, a range of sources within the World Ocean Database and unprecedented coverage from marine-mammal borne sensors have been analysed for the period 2002-2011. A significant seasonal range in temperature (~1-2?°C) is found in the warm layer, in contrast to most of the surrounding ocean. The phase of the seasonal cycle exhibits considerable spatial variability, with the warmest water found near the eastern and southwestern shelf-break towards the end of the calendar year. High-resolution ocean model trajectory analysis suggest the timing of the arrival of the year's warmest water is a function of advection time from the subduction site in the Irminger Basin

Modernizing Surveillance of Antituberculosis Drug Resistance: From Special Surveys to Routine Testing

Availability of new diagnostic tools and global commitment towards universal access to tuberculosis care will accelerate capacity of resource-limited countries to monitor anti-tuberculosis drug resistance. Special surveys will be replaced by routine surveillance of drug resistance linked to patient care

Non-Bloch-Siegert-type power-induced shift of two-photon electron paramagnetic resonances of charge-carrier spin states in an OLED

We present Floquet theory-based predictions and electrically detected magnetic resonance (EDMR) experiments scrutinizing the nature of two-photon magnetic resonance shifts of charge-carrier spin states in the perdeuterated $\pi$-conjugated polymer poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] (d-MEH-PPV) under strong magnetic resonant drive conditions (radiation amplitude $B_1$ ~ Zeeman field $B_0$). Numerical calculations show that the two-photon resonance shift with power is nearly drive-helicity independent. This is in contrast to the one-photon Bloch-Siegert shift that only occurs under non-circularly polarized strong drive conditions. We therefore treated the Floquet Hamiltonian analytically under arbitrary amplitudes of the co- and counter-rotating components of the radiation field to gain insight into the nature of the helicity dependence of multi-photon resonance shifts. In addition, we tested Floquet-theory predictions experimentally by comparing one-photon and two-photon charge-carrier spin resonance shifts observed through room-temperature EDMR experiments on d-MEH-PPV-based bipolar injection devices [i.e., organic light emitting diode structures (OLEDs)]. We found that under the experimental conditions of strong, linearly polarized drive, our observations consistently agree with theory, irrespective of the magnitude of $B_1$, and therefore underscore the robustness of Floquet theory in predicting nonlinear magnetic resonance behaviors.Comment: 22 pages, 5 figure

Differentiation between polaron-pair and triplet-exciton polaron spin-dependent mechanisms in organic light-emitting diodes by coherent spin beating

Pulsed electrically detected magnetic resonance offers a unique avenue to distinguish between polaron-pair (PP) and triplet-exciton polaron (TEP) spin-dependent recombination, which control the conductivity and magnetoresistivity of organic semiconductors. Which of these two fundamental processes dominates depends on carrier balance: by injecting surplus electrons we show that both processes simultaneously impact the device conductivity. The two mechanisms are distinguished by the presence of a half-field resonance, indicative of TEP interactions, and transient spin beating, the signature of PPs. Coherent spin Rabi flopping in the half-field (triplet) channel is observed, demonstrating that the triplet exciton has an ensemble phase coherence time of at least 60 ns, offering insight into the effect of carrier correlations on spin dephasing