Analysis of the intraspinal calcium dynamics and its implications on the plasticity of spiking neurons

The influx of calcium ions into the dendritic spines through the N-metyl-D-aspartate (NMDA) channels is believed to be the primary trigger for various forms of synaptic plasticity. In this paper, the authors calculate analytically the mean values of the calcium transients elicited by a spiking neuron undergoing a simple model of ionic currents and back-propagating action potentials. The relative variability of these transients, due to the stochastic nature of synaptic transmission, is further considered using a simple Markov model of NMDA receptos. One finds that both the mean value and the variability depend on the timing between pre- and postsynaptic action-potentials. These results could have implications on the expected form of synaptic-plasticity curve and can form a basis for a unified theory of spike time-dependent, and rate based plasticity.Comment: 14 pages, 10 figures. A few changes in section IV and addition of a new figur

Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs

The recently reported Rutherford backscattering and particle-induced X-ray emission experiments have revealed that in low-temperature MBE grown GaMnAs a significant part of the incorporated Mn atoms occupies tetrahedral interstitial sites in the lattice. Here we study the magnetic properties of these interstitial ions. We show that they do not participate in the hole-induced ferromagnetism. Moreover, Mn interstitial double donors may form pairs with the nearest substitutional Mn acceptors - our calculations evidence that the spins in such pairs are antiferromagnetically coupled by the superexchange. We also show that for the Mn ion in the other, hexagonal, interstitial position (which seems to be the case in the GaMnBeAs samples) the p-d interactions with the holes, responsible for the ferromagnetism, are very much suppressed.Comment: 4 pages, 3 figures, submitted to PR

Lepton Flavor Violation in Z and Lepton Decays in Supersymmetric Models

The observation of charged lepton flavor non-conservation would be a clear signature of physics beyond the Standard Model. In particular, supersymmetric (SUSY) models introduce mixings in the sneutrino and the charged slepton sectors which could imply flavor-changing processes at rates accessible to upcoming experiments. In this paper we analyze the possibility to observe Z --> lep_I lep_J in the GigaZ option of TESLA at DESY. We show that although models with SUSY masses above the current limits could predict a branching ratio BR(Z --> mu e) accessible to the experiment, they would imply an unobserved rate of mu --> e gamma and thus are excluded. In models with a small mixing angle between the first and the third (or the second and the third) slepton families GigaZ could observe Z --> tau mu (or Z --> tau e) consistently with present bounds on lep_J --> lep_I gamma. In contrast, if the mixing angles between the three slepton families are large the bounds from mu --> e gamma push these processes below the reach of GigaZ. We show that in this case the masses of the three slepton families must be strongly degenerated (with mass differences of order 10^{-3}). We update the limits on the slepton mass insertions delta_{LL,RR,LR} and discuss the correlation between flavor changing and g_mu-2 in SUSY models.Comment: 23 pages, 6 figures. Version to appear in Phys. Rev.

Measurement of the Mass Splittings between the bbˉχb,J(1P)b\bar{b}\chi_{b,J}(1P) States

We present new measurements of photon energies and branching fractions for the radiative transitions: Upsilon(2S)->gamma+chi_b(J=0,1,2). The masses of the chi_b states are determined from the measured radiative photon energies. The ratio of mass splittings between the chi_b substates, r==(M[J=2]-M[J=1])/(M[J=1]-M[J=0]) with M the chi_b mass, provides information on the nature of the bbbar confining potential. We find r(1P)=0.54+/-0.02+/-0.02. This value is in conflict with the previous world average, but more consistent with the theoretical expectation that r(1P)<r(2P); i.e., that this mass splittings ratio is smaller for the chi_b(1P) triplet than for the chi_b(2P) triplet.Comment: 11 page postscript file, postscript file also available through http://w4.lns.cornell.edu/public/CLN

Establishing SARS-CoV-2 membrane protein-specific antibodies as a valuable serological target via high-content microscopy

The prevalence and strength of serological responses mounted toward SARS-CoV-2 proteins other than nucleocapsid (N) and spike (S), which may be of use as additional serological markers, remains underexplored. Using high-content microscopy to assess antibody responses against full-length StrepTagged SARS-CoV-2 proteins, we found that 85% (166/196) of unvaccinated individuals with RT-PCR confirmed SARS-CoV-2 infections and 74% (31/42) of individuals infected after being vaccinated developed detectable IgG against the structural protein M, which is higher than previous estimates. Compared with N antibodies, M IgG displayed a shallower time-dependent decay and greater specificity. Sensitivity for SARS-CoV-2 seroprevalence was enhanced when N and M IgG detection was combined. These findings indicate that screening for M seroconversion may be a good approach for detecting additional vaccine breakthrough infections and highlight the potential to use HCM as a rapidly deployable method to identify the most immunogenic targets of newly emergent pathogens

Effects of sleep deprivation on neural functioning: an integrative review

Sleep deprivation has a broad variety of effects on human performance and neural functioning that manifest themselves at different levels of description. On a macroscopic level, sleep deprivation mainly affects executive functions, especially in novel tasks. Macroscopic and mesoscopic effects of sleep deprivation on brain activity include reduced cortical responsiveness to incoming stimuli, reflecting reduced attention. On a microscopic level, sleep deprivation is associated with increased levels of adenosine, a neuromodulator that has a general inhibitory effect on neural activity. The inhibition of cholinergic nuclei appears particularly relevant, as the associated decrease in cortical acetylcholine seems to cause effects of sleep deprivation on macroscopic brain activity. In general, however, the relationships between the neural effects of sleep deprivation across observation scales are poorly understood and uncovering these relationships should be a primary target in future research

Defect Studies in Low-Temperature-Grown GaAs

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated