1,548 research outputs found

    Theoretical Uncertainties in Red Giant Branch Evolution: The Red Giant Branch Bump

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    A Monte Carlo simulation exploring uncertainties in standard stellar evolution theory on the red giant branch of metal-poor globular clusters has been conducted. Confidence limits are derived on the absolute V-band magnitude of the bump in the red giant branch luminosity function (M_v,b) and the excess number of stars in thebump, R_b. The analysis takes into account uncertainties in the primordial helium abundance, abundance of alpha-capture elements, radiative and conductive opacities, nuclear reaction rates, neutrino energy losses, the treatments of diffusion and convection, the surface boundary conditions, and color transformations. The uncertainty in theoretical values for the red giant bump magnitude varies with metallicity between +0.13/-0.12 mag at [Fe/H] = -2.4 and +0.23/-0.21 mag at [Fe/H] = -1.0.Thedominantsourcesofuncertaintyaretheabundanceofthealpha−captureelements,themixinglength,andthelow−temperatureopacities.ThetheoreticalvaluesofMv,bareingoodagreementwithobservations.TheuncertaintyinthetheoreticalvalueofRbis+/−0.01atallmetallicitiesstudied.Thedominantsourcesofuncertaintyaretheabundanceofthealpha−captureelements,themixinglength,andthehigh−temperatureopacities.ThemedianvalueofRbvariesfrom0.44at[Fe/H]=−2.4. The dominant sources of uncertainty are the abundance of the alpha-capture elements, the mixing length, and the low-temperature opacities. The theoretical values of M_v,b are in good agreement with observations. The uncertainty in the theoretical value of R_b is +/-0.01 at all metallicities studied. The dominant sources of uncertainty are the abundance of the alpha-capture elements, the mixing length, and the high-temperature opacities. The median value of R_b varies from 0.44 at [Fe/H] = -2.4 to 0.50 at [Fe/H] = -1.0. These theoretical values for R_b are in agreement with observations.Comment: 30 pages, 6 figures. To appear in Ap

    GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

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    GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure

    Single donor ionization energies in a nanoscale CMOS channel

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    One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics industry. While single-dopant signatures have been observed at low temperature, studying the impact of only one dopant up to room temperature requires extremely small lengths. Here, we show that a single arsenic dopant dramatically affects the off-state behavior of an advanced microelectronics field effect transistor (FET) at room temperature. Furthermore, the ionization energy of this dopant should be profoundly modified by the close proximity of materials with a different dielectric constant than the host semiconductor. We measure a strong enhancement, from 54meV to 108meV, of the ionization energy of an arsenic atom located near the buried oxide. This enhancement is responsible for the large current below threshold at room temperature and therefore explains the large variability in these ultra-scaled transistors. The results also suggest a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals

    Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm

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    Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions

    Direct frequency comb measurement of OD + CO → DOCO kinetics

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    The kinetics of the hydroxyl radical (OH) + carbon monoxide (CO) reaction, which is fundamental to both atmospheric and combustion chemistry, are complex because of the formation of the hydrocarboxyl radical (HOCO) intermediate. Despite extensive studies of this reaction, HOCO has not been observed under thermal reaction conditions. Exploiting the sensitive, broadband, and high-resolution capabilities of time-resolved cavity-enhanced direct frequency comb spectroscopy, we observed deuteroxyl radical (OD) + CO reaction kinetics and detected stabilized trans-DOCO, the deuterated analog of trans-HOCO. By simultaneously measuring the time-dependent concentrations of the trans-DOCO and OD species, we observed unambiguous low-pressure termolecular dependence of the reaction rate coefficients for N_2 and CO bath gases. These results confirm the HOCO formation mechanism and quantify its yield

    C3 deficiency ameliorates the negative effects of irradiation of the young brain on hippocampal development and learning

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    Radiotherapy in the treatment of pediatric brain tumors is often associated with debilitating late-appearing adverse effects, such as intellectual impairment. Areas in the brain harboring stem cells are particularly sensitive to irradiation (IR) and loss of these cells may contribute to cognitive deficits. It has been demonstrated that IR-induced inflammation negatively affects neural progenitor differentiation. In this study, we used mice lacking the third complement component (C3-/-) to investigate the role of complement in a mouse model of IR-induced injury to the granule cell layer (GCL) of the hippocampus. C3-/- and wild type (WT) mice received a single, moderate dose of 8 Gy to the brain on postnatal day 10. The C3-/- mice displayed 55 % more microglia (Iba-1+) and a trend towards increase in proliferating cells in the GCL compared to WT mice 7 days after IR. Importantly, months after IR C3-/- mice made fewer errors than WT mice in a reversal learning test indicating better learning capacity in C3-/- mice after IR. Notably, months after IR C3-/- and WT mice had similar GCL volumes, survival of newborn cells (BrdU), microglia (Iba-1) and astrocyte (S100β) numbers in the GCL. In summary, our data show that the complement system contributes to IR-induced loss of proliferating cells and maladaptive inflammatory responses in the acute phase after IR, leading to impaired learning capacity in adulthood. Targeting the complement system is hence promising for future strategies to reduce the long-term adverse consequences of IR in the young brain
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