1,548 research outputs found
Theoretical Uncertainties in Red Giant Branch Evolution: The Red Giant Branch Bump
A Monte Carlo simulation exploring uncertainties in standard stellar
evolution theory on the red giant branch of metal-poor globular clusters has
been conducted. Confidence limits are derived on the absolute V-band magnitude
of the bump in the red giant branch luminosity function (M_v,b) and the excess
number of stars in thebump, R_b. The analysis takes into account uncertainties
in the primordial helium abundance, abundance of alpha-capture elements,
radiative and conductive opacities, nuclear reaction rates, neutrino energy
losses, the treatments of diffusion and convection, the surface boundary
conditions, and color transformations.
The uncertainty in theoretical values for the red giant bump magnitude varies
with metallicity between +0.13/-0.12 mag at [Fe/H] = -2.4 and +0.23/-0.21 mag
at [Fe/H] = -1.0 to 0.50 at [Fe/H] =
-1.0. These theoretical values for R_b are in agreement with observations.Comment: 30 pages, 6 figures. To appear in Ap
GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by
molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs
phase separation. Their density is proportional to the density of catalyzing
MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate
temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the
nanowires combine one-dimensional properties with the magnetic properties of
(Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure
Single donor ionization energies in a nanoscale CMOS channel
One consequence of the continued downwards scaling of transistors is the
reliance on only a few discrete atoms to dope the channel, and random
fluctuations of the number of these dopants is already a major issue in the
microelectonics industry. While single-dopant signatures have been observed at
low temperature, studying the impact of only one dopant up to room temperature
requires extremely small lengths. Here, we show that a single arsenic dopant
dramatically affects the off-state behavior of an advanced microelectronics
field effect transistor (FET) at room temperature. Furthermore, the ionization
energy of this dopant should be profoundly modified by the close proximity of
materials with a different dielectric constant than the host semiconductor. We
measure a strong enhancement, from 54meV to 108meV, of the ionization energy of
an arsenic atom located near the buried oxide. This enhancement is responsible
for the large current below threshold at room temperature and therefore
explains the large variability in these ultra-scaled transistors. The results
also suggest a path to incorporating quantum functionalities into silicon CMOS
devices through manipulation of single donor orbitals
Determining the electronic performance limitations in top-down fabricated Si nanowires with mean widths down to 4 nm
Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions
Direct frequency comb measurement of OD + CO → DOCO kinetics
The kinetics of the hydroxyl radical (OH) + carbon monoxide (CO) reaction, which is fundamental to both atmospheric and combustion chemistry, are complex because of the formation of the hydrocarboxyl radical (HOCO) intermediate. Despite extensive studies of this reaction, HOCO has not been observed under thermal reaction conditions. Exploiting the sensitive, broadband, and high-resolution capabilities of time-resolved cavity-enhanced direct frequency comb spectroscopy, we observed deuteroxyl radical (OD) + CO reaction kinetics and detected stabilized trans-DOCO, the deuterated analog of trans-HOCO. By simultaneously measuring the time-dependent concentrations of the trans-DOCO and OD species, we observed unambiguous low-pressure termolecular dependence of the reaction rate coefficients for N_2 and CO bath gases. These results confirm the HOCO formation mechanism and quantify its yield
C3 deficiency ameliorates the negative effects of irradiation of the young brain on hippocampal development and learning
Radiotherapy in the treatment of pediatric brain tumors is often associated with debilitating late-appearing adverse effects, such as intellectual impairment. Areas in the brain harboring stem cells are particularly sensitive to irradiation (IR) and loss of these cells may contribute to cognitive deficits. It has been demonstrated that IR-induced inflammation negatively affects neural progenitor differentiation. In this study, we used mice lacking the third complement component (C3-/-) to investigate the role of complement in a mouse model of IR-induced injury to the granule cell layer (GCL) of the hippocampus. C3-/- and wild type (WT) mice received a single, moderate dose of 8 Gy to the brain on postnatal day 10. The C3-/- mice displayed 55 % more microglia (Iba-1+) and a trend towards increase in proliferating cells in the GCL compared to WT mice 7 days after IR. Importantly, months after IR C3-/- mice made fewer errors than WT mice in a reversal learning test indicating better learning capacity in C3-/- mice after IR. Notably, months after IR C3-/- and WT mice had similar GCL volumes, survival of newborn cells (BrdU), microglia (Iba-1) and astrocyte (S100β) numbers in the GCL. In summary, our data show that the complement system contributes to IR-induced loss of proliferating cells and maladaptive inflammatory responses in the acute phase after IR, leading to impaired learning capacity in adulthood. Targeting the complement system is hence promising for future strategies to reduce the long-term adverse consequences of IR in the young brain
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The Emotional Word-Emotional Face Stroop task in the ABCD study: Psychometric validation and associations with measures of cognition and psychopathology
Characterizing the interactions among attention, cognitive control, and emotion during adolescence may provide important insights into why this critical developmental period coincides with a dramatic increase in risk for psychopathology. However, it has proven challenging to develop a single neurobehavioral task that simultaneously engages and differentially measures these diverse domains. In the current study, we describe properties of performance on the Emotional Word-Emotional Face Stroop (EWEFS) task in the Adolescent Brain Cognitive Development (ABCD) Study, a task that allows researchers to concurrently measure processing speed/attentional vigilance (i.e., performance on congruent trials), inhibitory control (i.e., Stroop interference effect), and emotional information processing (i.e., difference in performance on trials with happy as compared to angry distracting faces). We first demonstrate that the task manipulations worked as designed and that Stroop performance is associated with multiple cognitive constructs derived from different measures at a prior time point. We then show that Stroop metrics tapping these three domains are preferentially associated with aspects of externalizing psychopathology and inattention. These results highlight the potential of the EWEFS task to help elucidate the longitudinal dynamics of attention, inhibitory control, and emotion across adolescent development, dynamics which may be altered by level of psychopathology
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