Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects

A theory of the electronic response in spin and charge disordered media is developed with the particular aim to describe III-V dilute magnetic semiconductors like GaMnAs. The theory combines a detailed k.p description of the valence band, in which the itinerant carriers are assumed to reside, with first-principles calculations of disorder contributions using an equation-of-motion approach for the current response function. A fully dynamic treatment of electron-electron interaction is achieved by means of time-dependent density functional theory. It is found that collective excitations within the valence band significantly increase the carrier relaxation rate by providing effective channels for momentum relaxation. This modification of the relaxation rate, however, only has a minor impact on the infrared optical conductivity in GaMnAs, which is mostly determined by the details of the valence band structure and found to be in agreement with experiment.Comment: 15 pages, 9 figure

Predicted band structures of III-V semiconductors in wurtzite phase

While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier {\it ab initio} calculations, and where experimental results are available (InP, InAs and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may lead to new functionalities for designing devices that manipulate spin degrees of freedom

On-chip cavity quantum phonodynamics with an acceptor qubit in silicon

We describe a chip-based, solid-state analogue of cavity-QED utilizing acoustic phonons instead of photons. We show how long-lived and tunable acceptor impurity states in silicon nanomechanical cavities can play the role of a matter non-linearity for coherent phonons just as, e.g., the Josephson qubit plays in circuit-QED. Both strong coupling (number of Rabi oscillations ~ 100) and strong dispersive coupling (0.1-2 MHz) regimes can be reached in cavities in the 1-20 GHz range, enabling the control of single phonons, phonon-phonon interactions, dispersive phonon readout of the acceptor qubit, and compatibility with other optomechanical components such as phonon-photon translators. We predict explicit experimental signatures of the acceptor-cavity system.Comment: 6 pages, 2 figures, PDFLaTeX. New version improves clarit

Hole spin relaxation in intrinsic and pp-type bulk GaAs

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In $p$-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D'yakonov-Perel' mechanism can markedly contribute to the .... (omitted due to the limit of space)Comment: 11 pages, 7 figures, Phys. Rev. B, in pres

D'yakonov-Perel' spin relaxation for degenerate electrons in the electron-hole liquid

We present an analytical study of the D'yakonov-Perel' spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The D'yakonov-Perel' spin relaxation of electrons in these materials is controlled by electron-hole scattering, with small corrections from electron-electron scattering and virtually none from electron-impurity scattering. We derive simple expressions (one-dimensional and two-dimensional integrals respectively) for the effective electron-hole and electron-electron scattering rates which enter the spin relaxation time calculation. The electron-hole scattering rate is found to be comparable to the scattering rates from impurities in the electron liquid - a common model for n-type doped semiconductors. As the density of electron-hole pairs decreases (within the degenerate regime), a strong enhancement of the scattering rates and a corresponding slowing down of spin relaxation is predicted due to exchange and correlation effects in the electron-hole liquid. In the opposite limit of high density, the original D'yakonov-Perel' model fails due to decreasing scattering rates and is eventually superseded by free precession of individual quasiparticle spins.Comment: 16 pages, 5 figure

Spin relaxation in nn-type ZnO quantum wells

We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density.Comment: 6 pages, 4 figure

Pauli blockade of the electron spin flip in bulk GaAs

By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of magnitude when the electron kinetic energy varies from 2 to 30 meV. At the high excitation densities and low temperatures of the reported experiments the main spin-flip mechanism of the conduction band electrons is the Bir-Aronov-Pikus. By means of Monte-Carlo simulations we evidence that phase-space filling effects result in the blocking of the spin flip, yielding an increase of t_sf with excitation density. These effects obtain values of t_sf up to 30 ns at k=0, the longest reported spin-relaxation time in undoped GaAs in the absence of a magnetic field.Comment: new author added, major changes in section IV (phenomenological model), minor changes throughout the entire manuscrip

Hole spin dephasing time associated to hyperfine interaction in quantum dots

The spin interaction of a hole confined in a quantum dot with the surrounding nuclei is described in terms of an effective magnetic field. We show that, in contrast to the Fermi contact hyperfine interaction for conduction electrons, the dipole-dipole hyperfine interaction is anisotropic for a hole, for both pure or mixed hole states. We evaluate the coupling constants of the hole-nuclear interaction and demonstrate that they are only one order of magnitude smaller than the coupling constants of the electron-nuclear interaction. We also study, theoretically, the hole spin dephasing of an ensemble of quantum dots via the hyperfine interaction in the framework of frozen fluctuations of the nuclear field, in absence or in presence of an applied magnetic field. We also discuss experiments which could evidence the dipole-dipole hyperfine interaction and give information on hole mixing.Comment: 35 pages, 7 figures and 2 table

Effective Hamiltonian of Strained Graphene

Based on the symmetry properties of graphene lattice, we derive the effective Hamiltonian of graphene under spatially non-uniform acoustic and optical strains. We show that with the proper selection of the parameters, the obtained Hamiltonian reproduces the results of first-principles spectrum calculations for acoustic strain up to 10%. The results are generalized for the case of graphene with broken plane reflection symmetry, which corresponds, for example, to the case of graphene placed at a substrate. Here, essential modifications to the Hamiltonian give rise, in particular, to the gap opening in the spectrum in the presence of the out of plane component of optical strain, which is shown to be due to the lifting of the sublattice symmetry. The developed effective Hamiltonian can be used as a convenient tool for analysis of a variety of strain-related effects, including electron-phonon interaction or pseudo-magnetic fields induced by the non-uniform strain

Soil Baiting, Rapid PCR Assay and Quantitative Real TIME PCR to Diagnose Late Blight of Potato in Quarantine Programs

Phytophthora infestans (mont) de Bary is a pathogen of great concern across the globe, and accurate detection is an important component in responding to the outbreaks of potential disease. Although the molecular diagnostic protocol used in regulatory programs has been evaluated but till date methods implying direct comparison has rarely used. In this study, a known area soil samples from potato fields where light blight appear every year (both A1 and A2 mating type) was assayed by soil bait method, PCR assay detection and quantification of the inoculums. Suspected disease symptoms appeared on bait tubers were further confirmed by rapid PCR, inoculums were quantified through Real Time PCR, which confirms presence of P. infestans. These diagnostic methods can be highly correlated with one another. Potato tuber baiting increased the sensitivity of the assay compared with direct extraction of DNA from tuber and soil samples. Our study determines diagnostic sensitivity and specificity of the assays to determine the performance of each method. Overall, molecular techniques based on different types of PCR amplification and Real-time PCR can lead to high throughput, faster and more accurate detection method which can be used in quarantine programmes in potato industry and diagnostic laboratory