"Rare" Fluctuation Effects in the Anderson Model of Localization

We discuss the role of rare fluctuation effects in quantum condensed matter systems. In particular, we present recent numerical results of the effect of resonant states in Anderson's original model of electron localization. We find that such resonances give rise to anomalous behavior of eigenstates not just far in the Lifshitz tail, but rather for a substantial fraction of eigenstates, especially for intermediate disorder. The anomalous behavior includes non-analyticity in various properties as a characteristic. The effect of dimensionality on the singularity, which is present in all dimensions, is described, and the behavior for bounded and unbounded disorder is contrasted

Singular Behavior of Eigenstates in Anderson's Model of Localization

We observe a singularity in the electronic properties of the Anderson Model of Localization with bounded diagonal disorder, which is clearly distinct from the well-established mobility edge (localization-delocalization transition) that occurs in dimensions $d>2$. We present results of numerical calculations for Anderson's original (box) distribution of onsite disorder in dimensions $d$ = 1, 2 and 3. To establish this hitherto unreported behavior, and to understand its evolution with disorder, we contrast the behavior of two different measures of the localization length of the electronic wavefunctions - the averaged inverse participation ratio and the Lyapunov exponent. Our data suggest that Anderson's model exhibits richer behavior than has been established so far.Comment: Correction to v1: Fig.3 caption now displaye

Fast preparation of critical ground states using superluminal fronts

We propose a spatio-temporal quench protocol that allows for the fast preparation of ground states of gapless models with Lorentz invariance. Assuming the system initially resides in the ground state of a corresponding massive model, we show that a superluminally-moving `front' that $\textit{locally}$ quenches the mass, leaves behind it (in space) a state $\textit{arbitrarily close}$ to the ground state of the gapless model. Importantly, our protocol takes time $\mathcal{O} \left( L \right)$ to produce the ground state of a system of size $\sim L^d$ ($d$ spatial dimensions), while a fully adiabatic protocol requires time $\sim \mathcal{O} \left( L^2 \right)$ to produce a state with exponential accuracy in $L$. The physics of the dynamical problem can be understood in terms of relativistic rarefaction of excitations generated by the mass front. We provide proof-of-concept by solving the proposed quench exactly for a system of free bosons in arbitrary dimensions, and for free fermions in $d = 1$. We discuss the role of interactions and UV effects on the free-theory idealization, before numerically illustrating the usefulness of the approach via simulations on the quantum Heisenberg spin-chain.Comment: 4.25 + 10 pages, 3 + 2 figure

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Disordered Quantum Spin Chains with Long-Range Antiferromagnetic Interactions

We investigate the magnetic susceptibility $\chi(T)$ of quantum spin chains of $N=1280$ spins with power-law long-range antiferromagnetic coupling as a function of their spatial decay exponent $\alpha$ and cutoff length $\xi$. The calculations are based on the strong disorder renormalization method which is used to obtain the temperature dependence of $\chi(T)$ and distribution functions of couplings at each renormalization step. For the case with only algebraic decay ($\xi = \infty$) we find a crossover at $\alpha^*=1.066$ between a phase with a divergent low-temperature susceptibility $\chi(T\rightarrow 0)$ for $\alpha > \alpha^*$ to a phase with a vanishing $\chi(T\rightarrow 0)$ for $\alpha < \alpha^*$. For finite cutoff lengths $\xi$, this crossover occurs at a smaller $\alpha^*(\xi)$. Additionally we study the localization of spin excitations for $\xi = \infty$ by evaluating the distribution function of excitation energies and we find a delocalization transition that coincides with the opening of the pseudo-gap at $\alpha_c=\alpha^*$.Comment: 6 pages, 7 figure

Temperature and magnetization-dependent band-gap renormalization and optical many-body effects in diluted magnetic semiconductors

We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band gap renormalization could be used as an experimental probe to determine the valence band or the impurity band nature of carrier ferromagnetism.Comment: Revised versio

Exchange coupling between silicon donors: the crucial role of the central cell and mass anisotropy

Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on controlling two qubit interactions has been slower. One reason for this is that the inter donor exchange coupling has been predicted to oscillate with separation, making it hard to estimate in device designs. We present a multivalley effective mass theory of a donor pair in silicon, including both a central cell potential and the effective mass anisotropy intrinsic in the Si conduction band. We are able to accurately describe the single donor properties of valley-orbit coupling and the spatial extent of donor wave functions, highlighting the importance of fitting measured values of hyperfine coupling and the orbital energy of the $1s$ levels. Ours is a simple framework that can be applied flexibly to a range of experimental scenarios, but it is nonetheless able to provide fast and reliable predictions. We use it to estimate the exchange coupling between two donor electrons and we find a smoothing of its expected oscillations, and predict a monotonic dependence on separation if two donors are spaced precisely along the [100] direction.Comment: Published version. Corrected b and B values from previous versio

Singular Behavior of Anderson Localized Wavefunctions for a Two-Site Model

We show analytically that the apparent non-analyticity discovered recently in the inverse participation ratio (IPR) of the eigenstates in Anderson's model of localization is also present in a simple two-site model, along with a concurrent non-analyticity in the density of states (DOS) at the same energy. We demonstrate its evolution from two sites to the thermodynamic limit by numerical methods. For the two site model, non-analyticity in higher derivatives of the DOS and IPR is also proven to exist for all bounded distributions of disorder

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

A scaled quantum computer with donor spins in silicon would benefit from a viable semiconductor framework and a strong inherent decoupling of the qubits from the noisy environment. Coupling neighbouring spins via the natural exchange interaction according to current designs requires gate control structures with extremely small length scales. We present a silicon architecture where bismuth donors with long coherence times are coupled to electrons that can shuttle between adjacent quantum dots, thus relaxing the pitch requirements and allowing space between donors for classical control devices. An adiabatic SWAP operation within each donor/dot pair solves the scalability issues intrinsic to exchange-based two-qubit gates, as it does not rely on sub-nanometer precision in donor placement and is robust against noise in the control fields. We use this SWAP together with well established global microwave Rabi pulses and parallel electron shuttling to construct a surface code that needs minimal, feasible local control.Comment: Published version - more detailed discussions, robustness to dephasing pointed out additionall