Решение задач управления при алмазно-искровом шлифовании сверхтвёрдых материалов

Представлено решение задачи управления, когда по требуемой чертежом шероховатости определяются различные сочетания режимов обработки, которые гарантируют получения необходимого качества поверхности. Результаты исследования проверены при обработке сверхтвёрдых материалов методом алмазно-искрового шлифования.Presented the solution to management tasks, when required by the drawing of roughness are determined by various combinations of processing modes, which guarantee obtaining the necessary surface quality. The study tested the processing of superhard materials by diamond–spark grinding

Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect to the noise behaviour. Different circuits have been simulated and an amplifier design is presented that best fits the requirements for high optical sensitivity

Ultra-Broadband InP-Based Photoreceiver with Integrated Travelling Wave Amplifier for 40 Gbit/s Detection

A monolithic InP-based photoreceiver for h = 1.55 pm is presented. Its opto-electronic conversion capabilities for 40 Gbit/s RZ- and NRZ-modulated PRBS data streams are demonstrated

Ultrafast monolithic InP-based photoreceiver module detecting a 40 Gbit/s optical TDM RZ modulated pulse sequence

A monolithic InP-based photoreceiver module for λ=1.55 μm is presented. It detects an RZ modulated PRBS at a bit rate of 40 Gbit/s generated from an optical TDM source under polarization scrambled pulse condition

27 GHz Bandwidth High Speed Monolithic Integrated Optoelectronic Photoreceiver consisting of a Waveguide Fed Photodiode and an InAlAs/InGaAs-HFET-Traveling Wave Amplifier

An InP-based monolithic integrated photoreceiver with a bandwidth of 27 GHz is presented. The device consists of a waveguide fed pin-photodiode and a traveling wave amplifier with coplanar waveguides based on four InAlAs/InGaAs/InP-HFET. The integration concept, receiver design, fabrication process and characterization are shown. The presented concept offers a potential for bit rates in the 100 Gb/s range

Monolithic pin-HEMT 1.55 μm Photoreceiver on InP with 27GHz Bandwidth

A monolithically integrated photoreceiver is presented. Based on a new integration concept comprising a waveguide integrated photodiode and a travelling wave GaInAs/AlInAs-HEMT amplifier. A record 3 dB bandwidth of 27 GHz is measured and a clearly open eye is obtained for a 20 Gbit/s pseudo-random bit stream. This high speed performance was achieved with photolithographically defined 0.7 μm gate length HEMTs, regrown by MBE on semi-insulating GaInAsP waveguide layer