Compact diode laser based light source with alternating dual-wavelength emission at 532 nm

Compact nonlinear frequency conversion of a Y-branch distributed Bragg reflector (DBR) diode laser for alternating dual-wavelength laser emission at 532 nm is presented for the very first time. The developed light source, realized on a 5 × 25 mm2 micro-optical bench, is based on single-pass second harmonic generation of a 1064 nm Y-branch DBR diode laser in a periodically poled lithium niobate waveguide crystal with superimposed poling periods. Phase-matching is obtained by intrinsic wavelength stabilization of the laser and wavelength tuning by implemented heater elements above the DBR gratings. Obtained optical output powers of 5.6 mW at 532.45 nm and 6.7 mW at 531.85 nm are limited by central lobe power contents of 52% available for waveguide coupling. With a spectral performance showing narrowband emission with spectral widths of 0.01 nm (0.4 cm−1) limited by the spectral resolution of the spectrum analyzer and a spectral spacing of 0.6 nm (20 cm−1), the developed light source is suitable for applications such as Raman spectroscopy and shifted excitation Raman difference spectroscopy (SERDS). Separate electrical contacts of the Y-branch diode laser enable alternating operation at both wavelengths

Compact, Watt-class 785 nm dual-wavelength master oscillator power amplifiers

785 nm micro-integrated, dual-wavelength master oscillator power amplifiers with a footprint of 5 mm × 25 mm are presented. They are based on Y-branch distributed Bragg reflector ridge waveguide diode lasers and anti-reflection coated tapered amplifiers. In order to reduce the impact of potential optical feedback, devices with master oscillator front facet reflectivities of 5% and 30% as well as with an integrated miniaturized optical isolator have been realized. A comparison up to 1 W shows narrowband dual wavelength laser emission with a spectral distance of 0.6 nm (10 cm−1) and individual spectral widths <20 pm. As expected, a higher front facet reflectivity leads to a significant reduction of feedback related mode hops. Longitudinal modes corresponding to the master oscillator resonator length remain within spectral windows <0.15 nm (3 cm−1), suitable for applications such as Raman spectroscopy and especially shifted excitation Raman difference spectroscopy. Integrating a compact 30 dB optical isolator completely eliminates the observed optical feedback effects. Lateral beam propagation ratios of 1.2 (1/e2) enable easy beam shaping and fiber coupling. Outside of the experimental comparison, the developed MOPAs provide up to 2.7 W of optical output power available for applications

One-Watt level mid-IR output, singly resonant, continuous-wave optical parametric oscillator pumped by a monolithic diode laser

We report more than 1.1 Watt of idler power at 3373 nm in a singly resonant optical parametric oscillator (SRO), directly pumped by a single-frequency monolithic tapered diode laser. The SRO is based on a periodically poled MgO:LiNbO3 crystal in a four mirror cavity and is excited by 8.05 W of 1062 nm radiation. The SRO pump power at threshold is 4 W. The internal slope-efficiency and conversion efficiency reach 89% and 44% respectively. The signal and idler waves are temperature tuned in the range of 1541 to 1600 nm and 3154 to 3415 nm respectively. To the best of our knowledge, this is the highest output obtained for a diode pumped optical parametric oscillator (OPO), and the first time a SRO is directly pumped by a monolithic tapered diode laser

Mode transitions in DBR semiconductor lasers: Experiments, mode analysis and simulations

The performance of a multisection DBR semiconductor laser emitting around 1060 nm is experimentally and theoretically investigated. Simulations and mode analysis of the traveling wave model including temperature induced changes of the refractive index explain experimentally observed nearly-periodic transitions between neighboring cavity mode determined continuous wave states with increasing injection current

Continuous Wave THz System Based on an Electrically Tunable Monolithic Dual Wavelength Y-Branch DBR Diode Laser

We analyse the use of a tunable dual wavelength Y-branch DBR laser diode for THz applications. The laser generates electrically tunable THz difference frequencies in the range between 100 and 300 GHz. The optical beats are tuned via current injection into a micro-resistor heater integrated on top of one of the distributed Bragg reflector (DBR) section of the diode. The laser is integrated in a homodyne THz system employing fiber coupled ion-implanted LT-GaAs log spiral antennas. The applicability of the developed system in THz spectroscopy is demonstrated by evaluating the spectral resonances of a THz filter as well as in THz metrology in thickness determination of a polyethylene sample