5 research outputs found
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Graphene functionalised by laser ablated V2O5 as highly sensitive NH3 sensor
Graphene has been recognized as a promising gas sensing material. The
response of graphene-based sensors can be radically improved by introducing
defects in graphene using, e. g., metal or metal oxide nanoparticles. We have
functionalised CVD grown, single layer graphene by applying pulsed laser
deposition (PLD) of V2O5 which resulted in a thin V2O5 layer on graphene with
average thickness of ~0.6 nm. According to Raman analysis, PLD process also
induced defects in graphene. Compared to unmodified graphene, the obtained
chemiresistive sensor showed considerable improvement of sensing ammonia at
room temperature. In addition, also the response time, sensitivity and
reversibility were essentially enhanced due to graphene functionalisation by
laser deposited V2O5. This can be explained by increased surface density of gas
adsorption sites introduced by high energy atoms in laser ablation plasma and
formation of nanophase boundaries between deposited V2O5 and graphene.Comment: 22 pages, 6 figure
Graphene-Based Ammonia Sensors Functionalised with Sub-Monolayer V<sub>2</sub>O<sub>5</sub>: A Comparative Study of Chemical Vapour Deposited and Epitaxial Graphene <xref rid="fn1-sensors-429828" ref-type="fn">†</xref>
Graphene in its pristine form has demonstrated a gas detection ability in an inert carrier gas. For practical use in ambient atmosphere, its sensor properties should be enhanced with functionalisation by defects and dopants, or by decoration with nanophases of metals or/and metal oxides. Excellent sensor behaviour was found for two types of single layer graphenes: grown by chemical vapour deposition (CVD) and transferred onto oxidized silicon (Si/SiO2/CVDG), and the epitaxial graphene grown on SiC (SiC/EG). Both graphene samples were functionalised using a pulsed laser deposited (PLD) thin V2O5 layer of average thickness ≈ 0.6 nm. According to the Raman spectra, the SiC/EG has a remarkable resistance against structural damage under the laser deposition conditions. By contrast, the PLD process readily induces defects in CVD graphene. Both sensors showed remarkable and selective sensing of NH3 gas in terms of response amplitude and speed, as well as recovery rate. SiC/EG showed a response that was an order of magnitude larger as compared to similarly functionalised CVDG sensor (295% vs. 31% for 100 ppm NH3). The adsorption site properties are assigned to deposited V2O5 nanophase, being similar for both sensors, rather than (defect) graphene itself. The substantially larger response of SiC/EG sensor is probably the result of the smaller initial free charge carrier doping in EG