Room temperature operational single electron transistor fabricated by focused ion beam deposition

We present the fabrication and room temperature operation of single electron transistors using 8nm8nmtungsten islands deposited by focused ion beamdeposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF0.499aF, giving a charging energy of 160.6meV160.6meV

Magnetic annealing of ferromagnetic thin films using induction heating

A method of performing magnetic annealing of a ferromagnetic thin film applied to a substrate includes applying an oscillating magnetic field to the ferromagnetic thin film to induce a current therein and heat the ferromagnetic thin film. A directional magnetic field is applied to the ferromagnetic thin film at the same time as the ferromagnetic thin film is heated, and the ferromagnetic thin film is allowed to acquire a desired magnetic characteristic, and then the oscillating magnetic field is removed and the ferromagnetic thin film is allowed to cool.https://digitalcommons.mtu.edu/patents/1038/thumbnail.jp

Induction heating of thin films

A method of performing regional heating of a system having a substrate. The method may include applying a thin film to the system, and controllably energizing a coil positioned near the thin film. The energized coils thereby generate a magnetic flux. The method further includes inducing a current in the thin film with the magnetic flux thereby heating the system.https://digitalcommons.mtu.edu/patents/1046/thumbnail.jp

THE USE OF PRIVATE LANDS IN THE U.S. FOR OUTDOOR RECREATION: RESULTS OF A NATIONWIDE SURVEY

Land Economics/Use, Resource /Energy Economics and Policy,

Light sensor platform based on the integration of Bacteriorhodopsin with a single electron transistor

This paper reports on the integration of an optical protein with single electron transistors to form a nano-bio-hybrid device for sensing. Bacteriorhodopsin (bR) is an optoelectric protein that translocates a proton across a distance of several nanometers in response to an absorbed photon of incident light. This charge gradient results in a measurable voltage in the dried state. Single electron transistors (SETs) have active regions consisting of one or more quantum islands with a size typically 10 nanometers or less. Integrating bacteriorhodopsin with the gate of a SET provides a device capable of a modulated electrical output in response to optical modulation at the device gate. Modulation of the optoelectric activity of the bR by chemical binding with a targeted environmental antigen can form a direct chemical-to-electrical sensor reducing the size and complexity of fluorescence-based systems. The work resulted in electrical resistance and capacitance characterization of purple membrane containing bR under variable illumination to ensure minimal impact on SET operation. Purple membrane containing bacteriorhodopsin was electrodeposited on the SET gates, and current throughput was well correlated with variable and cyclic illumination. It was confirmed that bR optoelectric activity is capable of driving SETs

Federal Rule of Evidence 502: Has It Lived Up to Its Potential?

Nothing causes litigators greater anxiety than the possibility of doing, or failing to do, something during a civil case that waives attorney– client privilege or work-product protection. Attend any seminar, webcast, podcast, or other continuing legal education course dealing with the discovery of electronically stored information (“ESI”) and you are sure to hear about this concern and how to mitigate it

Governance from below in Bolivia: a theory of local government with two empirical tests

This article examines decentralization through the lens of the local dynamics it unleashed in the much-noted case of Bolivia. It argues that the national effects of decentralization are largely the sum of its local-level effects. To understand decentralization, therefore, we must first understand how local government works. The article explores the deep economic and institutional determinants of government quality in two extremes of municipal performance. From this it derives a model of local government responsiveness as the product of political openness and substantive competition. The quality of local politics, in turn, emerges endogenously as the joint product of the lobbying and political engagement of local firms and interests and the organizational density and ability of civil society. The analysis tests the theory's predictions on a database containing all Bolivian municipalities. The theory proves robust. The combined methodology provides a higher-order empirical rigor than either approach can alone

THE BOOK OF THE PAWNEE: Pawnee Stories for Study and Enjoyment

I. Meeting the Pawnee ............................... 1 II. Pawnee Beliefs .................................. . 3 The Pawnee Creation Story ...................... 3 The Boy Who Was Sacrificed ..................... 8 III. Pawnee Hero Stories ............................. 14 Lone Chief ................................. 14 Little Warrior\u27s Counsel. ................ . . . .... 27 IV. Pawnee Folk Tales ............................... 30 The Snake Brother ........................... 30 Mosquitoes ................................. 37 V. Boy Stories .................................... 39 The Boy Who Talked with Lightning .............. 39 The Boy and the Wonderful Robe ............... .42 The Boys, the Thunderbird, and the Water Monster .. 50 VI. Coyote Stories .................................. 54 Coyote and the Blind Buffalo ................... 54 Coyote and the Turkeys ....................... 55 Coyote and Eagle ............................ 56 Coyote and Bear ............................. 5

Simulation of charge transport in multi-island tunneling devices: Application to disordered one-dimensional systems at low and high biases

Although devices have been fabricated displaying interesting single-electron transport characteristics, there has been limited progress in the development of tools that can simulate such devices based on their physical geometry over a range of bias conditions up to a few volts per junction. In this work, we present the development of a multi-island transport simulator, MITS, a simulator of tunneling transport in multi-island devices that takes into account geometrical and material parameters, and can span low and high source-drain biases. First, the capabilities of MITS are demonstrated by modeling experimentaldevices described in the literature, and showing that the simulated device characteristics agree well with the experimental observations. Then, the results of studies of charge transport through a long one-dimensional (1D) chain of gold nano-islands on an insulating substrate are presented. Current-voltage (IV) characteristics are investigated as a function of the overall chain-length and temperature. Under high bias conditions, where temperature has a minimal effect, the IV characteristics are non-Ohmic, and do not exhibit any Coulomb staircase (CS) structures. The overall resistance of the device also increases non-linearly with increasing chain-length. For small biases, IV characteristics show clear CS structures that are more pronounced for larger chain-lengths. The Coulomb blockade and the threshold voltage (Vth ) required for device switching increase linearly with the increase in chain length. With increasing temperature, the blockade effects are diminished as the abrupt increase in current at Vth is washed out and the apparent blockade decreases. Microscopic investigations demonstrate that the overall V characteristics are a result of a complex interplay among those factors that affect the tunneling rates that are fixed a priori (island sizes, island separations, temperature, etc.), and the evolving charge state of the system, which changes as the applied source-drain bias (VSD ) is changed. In a system of nano-islands with a broad distribution of sizes and inter-island spacings, the applied bias is divided across the junctions as one would expect of a voltage divider, with larger potential drops across the wider junctions and smaller drops across the narrower junctions. As a result, the tunneling resistances across these wider junctions decrease dramatically, relative to the other junctions, at high VSD thereby increasing their electron tunneling rates. IV behavior at high VSD follows a power-law scaling behavior with the exponent dependent on the length of the chain and the degree of disorder in the system