Tracking defect-induced ferromagnetism in GaN:Gd

We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy (MBE). A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10^19 cm^-3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support the suggested connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen co-doping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd doped GaN

How reliable are Hanle measurements in metals in a three-terminal geometry?

We test the validity of Hanle measurements in three-terminal devices by using aluminum (Al) and gold (Au). The obtained Hanle and inverted Hanle-like curves show an anomalous behavior. First, we measure Hanle signals 8 orders of magnitude larger than those predicted by standard theory. Second, the temperature and voltage dependences of the signal do not match with the tunneling spin polarization of the ferromagnetic contact. Finally, the spin relaxation times obtained with this method are independent of the choice of the metallic channel. These results are not compatible with spin accumulation in the metal. Furthermore, a scaling of the Hanle signal with the interface resistance of the devices suggests that the measured signal is originated in the tunnel junction.Comment: 9 pages, 5 figure

Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects

We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR). The magnitude of the SMR depends on the interface preparation conditions, being optimal when Pt/CFO samples are prepared in situ, in a single process. The spin-mixing interface conductance, the key parameter governing SMR and other relevant spin-dependent phenomena such as spin pumping or spin Seebeck effect, is found to be different depending on the crystallographic orientation of CFO, highlighting the role of the composition and density of magnetic ions at the interface on spin mixing.Comment: 13 pages, 5 figure

Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration

We study the spin Hall magnetoresistance (SMR) and the magnon spin transport (MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces. Our measurements show that the surface treatment of the YIG film results in a slight enhancement of the spin-mixing conductance and an extraordinary increase in the efficiency of the spin-to-magnon excitations at room temperature. The surface of the YIG film develops a surface magnetic frustration at low temperatures, causing a sign change of the SMR and a dramatic suppression of the MST. Our results evidence that SMR and MST could be used to explore magnetic properties of surfaces, including those with complex magnetic textures, and stress the critical importance of the non-magnetic/ferromagnetic interface properties in the performance of the resulting spintronic devices.Comment: 15 pages, 4 figure

Modulation of pure spin currents with a ferromagnetic insulator

We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y$_3$Fe$_5$O$_{12}$ (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the non-local resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation. These results open a new path towards the development of spin logics.Comment: 5 pages and 4 figures + supplemental material (10 pages, 7 figures

Room-temperature air-stable spin transport in bathocuproine-based spin valves

Organic semiconductors, characterized by weak spin-scattering mechanisms, are attractive materials for those spintronic applications in which the spin information needs to be retained for long times. Prototypical spin-valve devices employing organic interlayers sandwiched between ferromagnetic materials possess a figure of merit (magnetoresistance (MR)) comparable to their fully inorganic counterparts. However, these results are a matter of debate as the conductivity of the devices does not show the expected temperature dependence. Here we show spin valves with an interlayer of bathocuproine in which the transport takes place unambiguously through the organic layer and where the electron spin coherence is maintained over large distances (>60 nm) at room temperature. Additionally, the devices show excellent air stability, with MR values almost unaltered after 70 days of storage under ambient conditions, making bathocuproine an interesting material for future spintronic applications.Fil: Sun, Xiangnan. CIC nanoGUNE; EspañaFil: Gobbi, Marco. Université de Strasbourg; Francia. CIC nanoGUNE; EspañaFil: Bedoya Pinto, Amilcar. CIC nanoGUNE; EspañaFil: Txoperena, Oihana. CIC nanoGUNE; EspañaFil: Golmar, Federico. CIC nanoGUNE; España. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, Roger. CIC nanoGUNE; EspañaFil: Chuvilin, Andrey. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Casanova, Félix. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Hueso, Luis E.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; Españ

Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe2_2O4_4 bilayers

We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the SMR contains a contribution that does not follow the bulk magnetization of CFO but it is a fingerprint of the complex magnetism at the surface of the CFO layer, thus signaling SMR as a tool for mapping surface magnetization. A systematic study of the SMR for different temperatures and CFO thicknesses gives us information impossible to obtain with any standard magnetometry technique. On one hand, surface magnetization behaves independently of the CFO thickness and does not saturate up to high fields, evidencing that the surface has its own anisotropy. On the other hand, characteristic zero-field magnetization steps are not present at the surface while they are relevant in the bulk, strongly suggesting that antiphase boundaries are the responsible of such intriguing features. In addition, a contribution from ordinary magnetoresistance of Pt is identified, which is only distinguishable due to the low resistivity of the $\textit{in-situ}$ grown Pt.Comment: 19 pages, 8 figures, Supplemental Materia