7,343 research outputs found
ABC for Temporally Sampled Genetic Data
ABC for Temporally Sampled Genetic Dat
Statement of Richard A. Beaumont Before the Commission on the Future of Worker-Management Relations
Testimony_Beaumont_011994.pdf: 483 downloads, before Oct. 1, 2020
Building an Optimal Census of the Solar Neighborhood with Pan-STARRS Data
We estimate the fidelity of solar neighborhood (D < 100 pc) catalogs soon to
be derived from Pan-STARRS astrometric data. We explore two quantities used to
measure catalog quality: completeness, the fraction of desired sources included
in a catalog; and reliability, the fraction of entries corresponding to desired
sources. We show that the main challenge in identifying nearby objects with
Pan-STARRS will be reliably distinguishing these objects from distant stars,
which are vastly more numerous. We explore how joint cuts on proper motion and
parallax will impact catalog reliability and completeness. Using synthesized
astrometry catalogs, we derive optimum parallax and proper motion cuts to build
a census of the solar neighborhood with the Pan-STARRS 3 Pi Survey. Depending
on the Galactic latitude, a parallax cut pi / sigma pi > 5 combined with a
proper motion cut ranging from mu / sigma mu > 1-8 achieves 99% reliability and
60% completeness.Comment: 7 Pages, 4 Figures, 3 Tables. PASP in pres
Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs
The contact and external series resistances play an important role in the performance of modern 0.1-0.2 ÎŒm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations. Here we describe a simple and efficient way to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Examples of simulation results are given for a 0.2 ÎŒm pseudomorphic HEMT
Preliminary Results for LP VPE X-Ray Detectors
Thick epitaxial layers have been grown using Low Pressure Vapour Phase
Epitaxy techniques with low free carrier concentrations . This type of material
is attractive as a medium for X-ray detection, because of its high conversion
efficiency for X-rays in the medically interesting energy range.Comment: 4 pages. PS file only - original in WORD. Also available at
http://ppewww.ph.gla.ac.uk/preprints/97/07
Strain engineered In<sub>x</sub>Ga<sub>1-x</sub>As channel pHEMTs on virtual substrates: a simulation study
The impact of In<sub>x</sub>Al<sub>1-x</sub>As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated. It is shown that relaxed and tensile strained channel devices outperform the conventional compressively strained channel devices. It is argued that strain engineering in GaAs based devices makes it possible to realise RF characteristics comparable to InP based pHEMTs while obtaining improved breakdown characteristics
RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study
No abstract avaliable
Command Method: A Gap in Military Historiography
Examples from history make everything clear, and in addition they afford the most convincing kind of proof in the empirical fields of knowledge. This applies more to the art of war than anything else. 1 Perhaps a final and vital conclusion is that a prolonged peacetime service is not necessarily conducive for the preparation of military personnel for war.
- âŠ