Breakdown and recovery of thin gate oxides

Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed\ud within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown

Process Development of Silicon Heterojunction Interdigitated Back-Contacted (SHJ-IBC) Solar Cells Bonded to Glass

In imec’s i2-module concept, silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells are fabricated on monocrystalline foils bonded to glass. The proposed technology allows for cell processing on thin wafers mechanically supported by the glass, increasing the yield of processing such thin wafers. A process sequence for SHJ-IBC cell fabrication that can be applied to bonded thin foils is described. We investigated and optimized individual process steps on thick wafers. Then the developed steps were integrated into a process flow to fabricate solar cells on wafers with different thicknesses and bonding agents. On wafers with a thickness of 190 μm, functional cells with efficiencies of 22.6% and 21.7% were made on freestanding and silicone bonded wafers, respectively. On thin wafers of 57 μm, our best SHJ-IBC cell on an EVA bonded wafer exhibits excellent Voc of 740 mV and efficiency of 20.0%, which demonstrates the high potential of the i2-module concept

Local distribution of particles deposited on patterned surfaces

In many process steps of integrated circuits (IC’s) fabrication, silicon wafers are coming in contact with process liquids such as ultra pure water (UPW) and aqueous and non-aqueous chemical mixtures. During these process steps, liquid-borne particle contamination can deposit on the wafer surface. Particle contamination from UPW is an important factor influencing random yield loss of IC’s [1]. A number of yield models are used to predict yields including Poisson, Murphy, Seeds, and negative binomial models [2,3]. However, these models are based on the assumption that particles are randomly deposited on the wafer surface [4]

Simple emitter patterning of silicon heterojunction interdigitated back-contact solar cells using damage-free laser ablation

© 2018 Elsevier B.V. In early 2017, the world record efficiency for single-junction crystalline silicon (c-Si) solar cells was achieved by merging amorphous silicon (a-Si:H)/c-Si heterojunction technology and back-contact architecture. However, to fabricate such silicon heterojunction interdigitated back-contact (SHJ-IBC) solar cells, complex a-Si:H patterning steps are required to form the interdigitated a-Si:H strips at the back side of the devices. This fabrication complexity raises concerns about the commercial potential of such devices. In this work, a novel process scheme for a-Si:H patterning using damage-free laser ablation is presented, leading to a fast, simple and photolithography-free emitter patterning approach for SHJ-IBC solar cells. To prevent laser-induced damage to the a-Si:H/c-Si heterocontact, an a-Si:H laser-absorbing layer and a dielectric mask are deposited on top of the a-Si:H/c-Si. Laser ablation only removes the top a-Si:H layer, reducing laser damage to the bottom a-Si:H/c-Si heterocontact under the dielectric mask. This dielectric mask is a distributed Bragg reflector (DBR), resulting in a high reflectance of 80% at the laser wavelength and thus providing additional protection to the a-Si:H/c-Si heterocontact. Using such simple a-Si:H patterning method, a proof-of concept 4-cm2 SHJ-IBC solar cell with an efficiency of up to 22.5% is achieved.status: publishe

Selective deposition of a-Si:H: a proof-of-concept study

We present a novel approach to simplify the rearside a-Si:H patterning of silicon heterojunction interdigitated back-contact solar cells. In our current process, laser ablation and lift-off are used. Since lift-off is not industrially-viable, we propose to replace it with a selective deposition process which ensures a-Si: H is realised only on c-Si surface and not on the SiOx mask, at the end of the process, based on cycles of a-Si: H deposition and etching. While neither the deposition nor the etching is truly selective, this method relies on the difference of a-Si: H etch rates on c-Si and SiOx surfaces to achieve selectivity as the net end-result. The main challenge is addressing the trade-off between selectivity and c-Si surface passivation.imec's industrial affiliation program for Si-PV; European Union's Horizon 2020 research and innovation programme [727523]Etching; Silicon; Photovoltaic cells; Dielectrics; Heterojunctions; Substrate

Simple emitter patterning of silicon heterojunction interdigitated back-contact solar cells using damage-free laser ablation

In early 2017, the world record efficiency for single-junction crystalline silicon (c-Si) solar cells was achieved by merging amorphous silicon (a-Si:H)/c-Si heterojunction technology and back-contact architecture. However, to fabricate such silicon heterojunction interdigitated back-contact (SHJ-IBC) solar cells, complex a-Si:H patterning steps are required to form the interdigitated a-Si:H strips at the back side of the devices. This fabrication complexity raises concerns about the commercial potential of such devices. In this work, a novel process scheme for a-Si:H patterning using damage-free laser ablation is presented, leading to a fast, simple and photolithography-free emitter patterning approach for SHJ-IBC solar cells. To prevent laser-induced damage to the a-Si:H/c-Si heterocontact, an a-Si:H laser-absorbing layer and a dielectric mask are deposited on top of the a-Si:H/c-Si. Laser ablation only removes the top a-Si:H layer, reducing laser damage to the bottom a-Si:H/c-Si heterocontact under the dielectric mask. This dielectric mask is a distributed Bragg reflector (DBR), resulting in a high reflectance of 80% at the laser wavelength and thus providing additional protection to the a-Si:H/c-Si heterocontact. Using such simple a-Si:H patterning method, a proof-of concept 4-cm(2) SHJ-IBC solar cell with an efficiency of up to 22.5% is achieved.The authors gratefully acknowledge the financial support of IMEC's Industrial Affiliation Program for Si-PV. This project has also received funding from the European Union's Horizon 2020 Research and Innovation Programme under grant agreement no. 727523 (NextBase).Silicon heterojunction; Amorphous silicon; Solar cells; Interdigitated back-contact; Laser ablation; Patternin

Impact of Acoustical Reflections on Megasonic Cleaning Performance

Electrical measurements have shown a direct impact of reflection of acoustic waves back into a transducer. Impedance measurements illustrate in specific cases the existence of multiple resonance peaks when reflected acoustic waves are present. Current and voltage measurements have confirmed this result. From these results, one can already conclude that acoustic reflections have a large impact on the operation of a transducer. Furthermore, it is shown that for megasonic cleaning tools with a face-to-face configuration of transducer and wafer, a precise control over the distance (control over the reflections) between the transducer and wafer is very important. Particle Removal Efficiency (PRE) measurements immediately show a major dependence on the position of the wafer. The PRE dependence is directly linked to the forward power consumed by the transducer, which is largely influenced by the position of the wafer or, in other words, by the reflection of acoustic waves

Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage

A detailed investigation of the laser damage to amorphous silicon (a-Si:H) layers patterned by laser ablation (LA) and wet chemical etching is presented. This approach can be applied to pattern the rear side of silicon hetero-junction interdigitated back-contact solar cells. Only the top sacrificial a-Si: H laser-absorbing layer of an a-Si:H/SiOx/a-Si:H/c-Si stack is ablated. Laser damage in the bottom a-Si:H layer and a-Si:H/c-Si interface is analyzed by both scanning electron microscopy and transmission electron microscopy. We show that the a-Si:H/c-Si passivation is degraded by laser damage and that this degradation can be diminished by increasing laser processing speed. This is attributed to a decrease of laser-irradiated area, and particularly smaller overlapping zones of adjacent laser pulses. The re-passivation quality after LA and wet etching is similar to that of as-passivated samples. This indicates that laser damage is not present in the bulk c-Si substrate but only in the a-Si: H passivation layer, which is removed during subsequent wet etching, thus allowing high quality repassivation.The authors are grateful for the financial support of imec's industrial affiliation program for Si-PV. The research has also received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement no. 727523 (NextBase), and under the Marie Sklodowska-Curie grant agreement no. 657270. The authors gratefully acknowledge Pieter Lagrain and Hugo Bender in the MCA group of imec for the TEM measurements and Haodong Zhang for the SEM measurements.amorphous silicon; heterojunctions; laser ablation; passivation; patterning; silico

Dry passivation process for silicon heterojunction solar cells using hydrogen plasma treatment followed by in situ a-Si:H deposition

A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H-2) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H-2 gas flow rate and H-2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H-2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 x 10(15) cm(-3), equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy

All-dielectric Nano-antennas for Wavelength-controlled Bidirectional Scattering of Visible Light

An optical antenna forms the subwavelength bridge between free space optical radiation and localized electromagnetic energy. Its localized electromagnetic modes strongly depend on its geometry and material composition. Here, we present the design and experimental realization of a novel V-shaped all-dielectric antenna based on high-index amorphous silicon with a strong magnetic dipole resonance in the visible range. As a result, it exhibits extraordinary bidirectional scattering into diametrically opposite directions. The scattering direction is effectively controlled by the incident wavelength, rendering the antenna a passive bidirectional wavelength router. A detailed multipole decomposition analysis reveals that the excitation and abrupt phase change of an out-of-plane polarized magnetic dipole and an in-plane electric quadrupole are essential for the directivity switching. Previously, noble metals have been extensively exploited for plasmonic directional nanoantenna design. However, these inevitably suffer from high intrinsic ohmic losses and a relatively weak magnetic response to the incident light. Compared to a similar gold plasmonic nanoantenna design, we show that the silicon-based antennas demonstrate stronger magnetic scattering with minimal absorption losses. Our results indicate that all-dielectric antennas will open exciting possibilities for efficient manipulation of light-matter interactions.status: publishe