Ultrasound-assisted cold pasteurization in liquid or SC-CO2

Various types of chemical and physical protocols are used, thermal treatment in particular, to increase the quality of bulk food products (for example, dates or some sort of nuts) and extend shelf life, and combinations of methods are frequently used to achieve the best results. However, the use of these processing methods is not always the best option to preserve the initial taste and appearance of food products. For instance, a product may lose its initial natural appearance and acquire different flavors due to chemical transformations that occur at certain temperatures or when the products are treated with chemicals. Non-thermal treatment methods are called “cold” pasteurization. This is a set of advanced techniques that are based on physical and chemical effects that do not result in the structural food-product transformations caused by heating. We have developed and tested a new technique for efficient food-product processing and cold pasteurization in an ultrasonic field under pressure in an atmosphere of supercritical or subcritical carbon dioxide. A laboratory-scale unit that was designed and built for this purpose has experimentally proven the feasibility of this process and demonstrated high efficiency in suppressing pathogenic flora

Luminescence of sapphire single crystals irradiated with high-power ion beams

Optical absorption, photo- and cathodoluminescence of a sapphire single crystal (α-Al 2 O 3 ) exposed to pulsed nanosecond radiation with high-power ion beams C + /H + with an energy of 300 keV and energy density 0.5-1.5 J/cm 2 were first investigated in this work. It was found that under ion irradiation accompanied by heating of sapphire up to melting, the formation of F-type centers and their aggregates associated with oxygen vacancies was observed in the crystals under study. These centers have luminescence bands at 330, 410 and 500 nm which depend on the type and wavelength of the optical excitation. The appearance of a new PL emission at 435 nm, presumably associated with a complex vacancy-impurity defect, was also observed in the photoluminescence spectra. © Published under licence by IOP Publishing Ltd.The work was supported by the initiative scientific project № 16.5186.2017/8.9 of the Ministry of Education and Science of the Russian Federation. Experiments on ion irradiation of sapphire was done at the KIPT as a part of the state task

Peculiarities of x-ray fluorescent definition of ion-implanted Fe in Si single crystals

The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial crystal Si(100) in an azimuthal plane are executed. The results of analysis of the diffraction maxima are used for numerical modelling of angular intensity dependencies obtained for Si implanted by Fe. The experimental calibration equations allowing to define Fe concentration on the parameters of azimuthal angular intensity dependence of the analytical line are obtained. The behaviour of X-ray energy spectrum of the initial Si in the range of wave lengths 0.19-0.20 nm depending on an azimuthal angle is considered

Features of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ions

Abstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat- ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans- mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu- tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con- centration and pulsed treatment conditions were determined

Anomalous Transient Current in Nonuniform Semiconductors

Nonequilibrium processes in semiconductors are considered with highly nonuniform initial densities of charge carriers. It is shown that there exist such distributions of charge densities under which the electric current through a sample displays quite abnormal behaviour flowing against the applied voltage. The appearance of this negative electric current is a transient phenomenon occurring at the initial stage of the process. After this anomalous negative fluctuation, the electric current becomes normal, i.e. positive as soon as the charge density becomes more uniform. Several possibilities for the practical usage of this effect are suggested.Comment: 1 file, 11 pages, RevTex, no figure

Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. © 2005 Pleiades Publishing, Inc

Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation

© 2016, Pleiades Publishing, Ltd.Comparative analysis of the structural and optical properties of composite layers fabricated with the aid of implantation of single-crystalline silicon (c-Si) using Ge+ (40 keV/1 × 1017 ions/cm2) and Ag+ (30 keV/1.5 × 1017 ions/cm2) ions and sequential irradiation using Ge+ and Ag+ ions is presented. The implantation of the Ge+ ions leads to the formation of Ge: Si fine-grain amorphous surface layer with a thickness of 60 nm and a grain size of 20–40 nm. The implantation of c-Si using Ag+ ions results in the formation of submicron porous amorphous a-Si structure with a thickness of about 50 nm containing ion-synthesized Ag nanoparticles. The penetration of the Ag+ ions in the Ge: Si layer stimulates the formation of pores with Ag nanoparticles with more uniform size distribution. The reflection spectra of the implanted Ag: Si and Ag: GeSi layers exhibit a sharp decrease in the intensity in the UV (220–420 nm) spectral interval relative to the intensity of c-Si by more than 50% owing to the amorphization and structuring of surface. The formation of Ag nanoparticles in the implanted layers gives rise to a selective band of the plasmon resonance at a wavelength of about 820 nm in the optical spectra. Technological methods for fabrication of a composite based on GeSi with Ag nanoparticles are demonstrated in practice

Telemedicine as a priority instrument of informational-methodical basis for medical hospitals work

Проведено аналіз понять «телемедицина», а також «телемедичні технології», які сьогодні застосовуються. Автори наводять власні результати участі в телемедичних мостах і проведенні телемедичного консультування. Обговорюються варіанти різних конфігурацій телемедичного обладнання, яке можна використовувати в лікувально-профілактичних закладах України.The analysis of contemporary notions on “telemedicine” and “telemedical technologies” was made. The author delivered his own results of participation in telemedical bridgies and telemedical consultations. Different versions of telemedical devices configurations, which might be explored in Ukrainian hospitals have been also considered

Эффективность работы медицинской сестры в лечебно- профилактическом учреждении регионального уровня в связи с внедрением в его работу информационных технологий

Проведено хронометрування робочого часу медичної сестри в палаті інтенсивної терапії. Показано, що впровадження в практику роботи стандартів обслуговування сучасних засобів інформатизації післяопераційного блоку, а також «клінічного шляху» медсестри супроводжується зниженням числа ускладнень у пацієнтів після холецистектомій і операцій по усуненню гриж – двох найбільш часто застосованих методик у хірургічних відділеннях лікарні. При цьому спостерігалась тенденція до збільшення тривалості та числа контактів між медсестрою та пацієнтом.The chronometric measurements of nurses work was made at the ward of intensive therapy. It was shown that implementation into the work of standards of work with contemporary informational technologies purposed for postoperative care, along with the usage of standard on “clinician path” of nurse, resulted in the net reduction of postoperative complications in patients with cholecystectomies and hernia surgical treatment. These two types of operations have been performed most frequently at surgery department. The tendency on the prolongation of both duration and the frequency of contacts between nurses and patients have been registered as well.Проведено хронометрирование работы медицинской сестры в палате интенсивной терапии. Показано, что введение в практику работы стандартов работы с современными средствами информатизации послеоперационного блока, а также «клинического пути» медсестры сопровождается снижением числа осложнений у пациентов после холецистэктомий и операций по ушиванию грыж – двух наиболее часто выполнявшихся оперативных методик в отделениях хирургии. При этом отмечалась тенденция к увеличению продолжительности и числа контактов медсестры и пациента