Abstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides
were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat-
ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans-
mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu-
tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con-
centration and pulsed treatment conditions were determined