Assignment of the NV0 575 nm zero-phonon line in diamond to a 2E-2A2 transition

The time-averaged emission spectrum of single nitrogen-vacancy defects in diamond gives zero-phonon lines of both the negative charge state at 637 nm (1.945 eV) and the neutral charge state at 575 nm (2.156 eV). This occurs through photo-conversion between the two charge states. Due to strain in the diamond the zero-phonon lines are split and it is found that the splitting and polarization of the two zero-phonon lines are the same. From this observation and consideration of the electronic structure of the nitrogen-vacancy center it is concluded that the excited state of the neutral center has A2 orbital symmetry. The assignment of the 575 nm transition to a 2E - 2A2 transition has not been established previously.Comment: 5 pages, 5 figure

Luminescence of sapphire single crystals irradiated with high-power ion beams

Optical absorption, photo- and cathodoluminescence of a sapphire single crystal (α-Al 2 O 3 ) exposed to pulsed nanosecond radiation with high-power ion beams C + /H + with an energy of 300 keV and energy density 0.5-1.5 J/cm 2 were first investigated in this work. It was found that under ion irradiation accompanied by heating of sapphire up to melting, the formation of F-type centers and their aggregates associated with oxygen vacancies was observed in the crystals under study. These centers have luminescence bands at 330, 410 and 500 nm which depend on the type and wavelength of the optical excitation. The appearance of a new PL emission at 435 nm, presumably associated with a complex vacancy-impurity defect, was also observed in the photoluminescence spectra. © Published under licence by IOP Publishing Ltd.The work was supported by the initiative scientific project № 16.5186.2017/8.9 of the Ministry of Education and Science of the Russian Federation. Experiments on ion irradiation of sapphire was done at the KIPT as a part of the state task

Features of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ions

Abstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat- ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans- mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu- tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con- centration and pulsed treatment conditions were determined

Peculiarities of x-ray fluorescent definition of ion-implanted Fe in Si single crystals

The technique of definition of iron concentration in a surface layer of Si(100) is developed by use of spectrometer Spectroscan-U. The measurements of intensity of X-ray fluorescent line FeKα as a function of turn of initial crystal Si(100) in an azimuthal plane are executed. The results of analysis of the diffraction maxima are used for numerical modelling of angular intensity dependencies obtained for Si implanted by Fe. The experimental calibration equations allowing to define Fe concentration on the parameters of azimuthal angular intensity dependence of the analytical line are obtained. The behaviour of X-ray energy spectrum of the initial Si in the range of wave lengths 0.19-0.20 nm depending on an azimuthal angle is considered

Identification of synthetic lethality of PRKDC in MYC-dependent human cancers by pooled shRNA screening

BACKGROUND: MYC family members are among the most frequently deregulated oncogenes in human cancers, yet direct therapeutic targeting of MYC in cancer has been challenging thus far. Synthetic lethality provides an opportunity for therapeutic intervention of MYC-driven cancers. METHODS: A pooled kinase shRNA library screen was performed and next-generation deep sequencing efforts identified that PRKDC was synthetically lethal in cells overexpressing MYC. Genes and proteins of interest were knocked down or inhibited using RNAi technology and small molecule inhibitors, respectively. Quantitative RT-PCR using TaqMan probes examined mRNA expression levels and cell viability was assessed using CellTiter-Glo (Promega). Western blotting was performed to monitor different protein levels in the presence or absence of RNAi or compound treatment. Statistical significance of differences among data sets were determined using unpaired t test (Mann-Whitney test) or ANOVA. RESULTS: Inhibition of PRKDC using RNAi (RNA interference) or small molecular inhibitors preferentially killed MYC-overexpressing human lung fibroblasts. Moreover, inducible PRKDC knockdown decreased cell viability selectively in high MYC-expressing human small cell lung cancer cell lines. At the molecular level, we found that inhibition of PRKDC downregulated MYC mRNA and protein expression in multiple cancer cell lines. In addition, we confirmed that overexpression of MYC family proteins induced DNA double-strand breaks; our results also revealed that PRKDC inhibition in these cells led to an increase in DNA damage levels. CONCLUSIONS: Our data suggest that the synthetic lethality between PRKDC and MYC may in part be due to PRKDC dependent modulation of MYC expression, as well as MYC-induced DNA damage where PRKDC plays a key role in DNA damage repair

Low temperature studies of the excited-state structure of Nitrogen-Vacancy color centers in diamond

We report a study of the 3E excited-state structure of single nitrogen-vacancy (NV) defects in diamond, combining resonant excitation at cryogenic temperatures and optically detected magnetic resonance. A theoretical model of the excited-state structure is developed and shows excellent agreement with experimental observations. Besides, we show that the two orbital branches associated with the 3E excited-state are averaged when operating at room temperature. This study leads to an improved physical understanding of the NV defect electronic structure, which is invaluable for the development of diamond-based quantum information processing.Comment: 4 pages, 4 figure

Excited-state spectroscopy of single NV defects in diamond using optically detected magnetic resonance

Using pulsed optically detected magnetic resonance techniques, we directly probe electron-spin resonance transitions in the excited-state of single Nitrogen-Vacancy color centers in diamond. Unambiguous assignment of excited state fine structure is made, based on changes of NV defect photoluminescence lifetime. This study provides significant insight into the structure of the emitting 3E excited state, which is invaluable for the development of diamond-based quantum information processing.Comment: 10 pages, 4 figure

Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon

The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) into a silicon single crystal using irradiation, plastic deformation, or heat treatment has been considered a possible approach to the design of silicon-based light-emitting structures in the near infrared region. Defects were introduced into silicon plates by traditional mechanical polishing. The changes in the defect structure and the impurity composition of damaged silicon layers during thermal annealing (TA) of a crystal were examined using transmission electronic microscopy and x-ray fluorescence. Optical properties of the defects were studied at 77 K using photoluminescence (PL) in the near infrared region. It has been shown that the defects generated by mechanical polishing transform into dislocations and dislocation loops and that SiO2 precipitates also form as a result of annealing at temperatures of 850 to 1000°C. Depending on the annealing temperature, either oxide precipitates or dislocations decorated by copper atoms, which are gettered from the crystal bulk, make the predominant contribution to PL spectra. © 2005 Pleiades Publishing, Inc