Constructive Field Theory and Applications: Perspectives and Open Problems

In this paper we review many interesting open problems in mathematical physics which may be attacked with the help of tools from constructive field theory. They could give work for future mathematical physicists trained with the constructive methods well within the 21st century

Frequency Scaling of Microwave Conductivity in the Integer Quantum Hall Effect Minima

We measure the longitudinal conductivity $\sigma_{xx}$ at frequencies $1.246 {\rm GHz} \le f \le 10.05$ GHz over a range of temperatures $235 {\rm mK} \le T \le 4.2$ K with particular emphasis on the Quantum Hall plateaus. We find that $Re(\sigma_{xx})$ scales linearly with frequency for a range of magnetic field around the center of the plateaus, i.e. where $\sigma_{xx}(\omega) \gg \sigma_{xx}^{DC}$. The width of this scaling region decreases with higher temperature and vanishes by 1.2 K altogether. Comparison between localization length determined from $\sigma_{xx}(\omega)$ and DC measurements on the same wafer show good agreement.Comment: latex 4 pages, 4 figure

Strong, Ultra-narrow Peaks of Longitudinal and Hall Resistances in the Regime of Breakdown of the Quantum Hall Effect

With unusually slow and high-resolution sweeps of magnetic field, strong, ultra-narrow (width down to $100 {\rm \mu T}$) resistance peaks are observed in the regime of breakdown of the quantum Hall effect. The peaks are dependent on the directions and even the history of magnetic field sweeps, indicating the involvement of a very slow physical process. Such a process and the sharp peaks are, however, not predicted by existing theories. We also find a clear connection between the resistance peaks and nuclear spin polarization.Comment: 5 pages with 3 figures. To appear in PR

Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted from the numerical solution of the quantum Liouville equation in the Wigner function representation. Accounting for electron scattering due to ionized impurities, acoustic phonons and surface roughness at the Si/SiO2 interface, device characteristics are obtained as a function of a channel length. From the Wigner function distributions, the coexistence of the diffusive and the ballistic transport naturally emerges. It is shown that the scattering mechanisms tend to reduce the ballistic component of the transport. The ballistic component increases with decreasing the channel length.Comment: 21 pages, 8 figures, E-mail addresses: [email protected]

Self-consistent local-equilibrium model for density profile and distribution of dissipative currents in a Hall bar under strong magnetic fields

Recent spatially resolved measurements of the electrostatic-potential variation across a Hall bar in strong magnetic fields, which revealed a clear correlation between current-carrying strips and incompressible strips expected near the edges of the Hall bar, cannot be understood on the basis of existing equilibrium theories. To explain these experiments, we generalize the Thomas-Fermi--Poisson approach for the self-consistent calculation of electrostatic potential and electron density in {\em total} thermal equilibrium to a {\em local equilibrium} theory that allows to treat finite gradients of the electrochemical potential as driving forces of currents in the presence of dissipation. A conventional conductivity model with small values of the longitudinal conductivity for integer values of the (local) Landau-level filling factor shows that, in apparent agreement with experiment, the current density is localized near incompressible strips, whose location and width in turn depend on the applied current.Comment: 9 pages, 7 figure

Sparse Kneser graphs are Hamiltonian

For integers k≥1 and n≥2k+1, the Kneser graph K(n,k) is the graph whose vertices are the k-element subsets of {1,…,n} and whose edges connect pairs of subsets that are disjoint. The Kneser graphs of the form K(2k+1,k) are also known as the odd graphs. We settle an old problem due to Meredith, Lloyd, and Biggs from the 1970s, proving that for every k≥3, the odd graph K(2k+1,k) has a Hamilton cycle. This and a known conditional result due to Johnson imply that all Kneser graphs of the form K(2k+2a,k) with k≥3 and a≥0 have a Hamilton cycle. We also prove that K(2k+1,k) has at least 22k−6 distinct Hamilton cycles for k≥6. Our proofs are based on a reduction of the Hamiltonicity problem in the odd graph to the problem of finding a spanning tree in a suitably defined hypergraph on Dyck words

Efficacy of N-acetyl cysteine in traumatic brain injury

In this study, using two different injury models in two different species, we found that early post-injury treatment with NAcetyl Cysteine (NAC) reversed the behavioral deficits associated with the TBI. These data suggest generalization of a protocol similar to our recent clinical trial with NAC in blast-induced mTBI in a battlefield setting [1], to mild concussion from blunt trauma. This study used both weight drop in mice and fluid percussion injury in rats. These were chosen to simulate either mild or moderate traumatic brain injury (TBI). For mice, we used novel object recognition and the Y maze. For rats, we used the Morris water maze. NAC was administered beginning 30-60 minutes after injury. Behavioral deficits due to injury in both species were significantly reversed by NAC treatment. We thus conclude NAC produces significant behavioral recovery after injury. Future preclinical studies are needed to define the mechanism of action, perhaps leading to more effective therapies in man

Field-induced breakdown of the quantum Hall effect

A numerical analysis is made of the breakdown of the quantum Hall effect caused by the Hall electric field in competition with disorder. It turns out that in the regime of dense impurities, in particular, the number of localized states decreases exponentially with the Hall field, with its dependence on the magnetic and electric field summarized in a simple scaling law. The physical picture underlying the scaling law is clarified. This intra-subband process, the competition of the Hall field with disorder, leads to critical breakdown fields of magnitude of a few hundred V/cm, consistent with observations, and accounts for their magnetic-field dependence \propto B^{3/2} observed experimentally. Some testable consequences of the scaling law are discussed.Comment: 7 pages, Revtex, 3 figures, to appear in Phys. Rev.

Dynamical scaling of the quantum Hall plateau transition

Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments and all other data in literature. We observe a universal scaling function with an exponent kappa = 0.5 +/- 0.1, yielding a dynamical exponent z = 0.9 +/- 0.2.Comment: v2: Length shortened to fulfil Journal criteri