Diminiode thermionic conversion with 111-iridium electrodes

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA

Diminiode thermionic energy conversion with lanthanum-hexaboride electrodes

Thermionic conversion data obtained from a variable gap cesium diminiode with a hot pressed, sintered lanthanum hexaboride emitter and an arc melted lanthanum hexaboride collector are presented. Performance curves cover a range of temperatures: emitter 1500 to 1700 K, collector 750 to 1000 K, and cesium reservoir 370 to 510 K. Calculated values of emitter and collector work functions and barrier index are also given

Probability Of Anomaly Expressions For Random Waveform Registration

Registration by integral-square error correlation of one-dimensional Discrete Time waveforms which are treated as random processes with specified autocorrelation functions is considered. An important design parameter for this class of problems is the probability of anomaly (a false dip in the correlation function) because it gives an indication of system immunity to gross registration errors. Explicit expressions for this parameter are not possible, so bounds and approximations must be derived. Two upper bounds and an approximation for the probability of anomaly are derived here. The use of these expressions is illustrated by an example. The relative utility of these performance indicators is shown for the example by comparison with actual values of the probability of anomaly obtained by computer simulation. Copyright © 1977 by The Institute of Electrical and Electronics Engineers, Inc

Performance Comparison Of Techniques For Obtaining Stereo Radar Images

The performance of three stereo radar techniques is compared with respect to both theoretical performance and performance in the presence of errors. The three techniques are: an improved single flight technique, a previously proposed single flight technique, and a two flight technique. Theoretical data for comparison of image parameters affecting performance have been generated with computer simulations of the imaging geometries for the techniques. The comparison shows that the improved technique will have images with greater similarity resulting in improved stereo viewability and measurability. Computer simulations have also been used to generate sensitivities of computed terrain point coordinates to system errors. These sensitivities are shown, and overall error comparisons are made for assumed error values. These comparisons show that the improved single flight technique has the best error performance of the three techniques for the assumed reasonable set of system errors. This technique is followed by the previously proposed single flight technique and then the two flight technique. Copyright © 1974 by The Institute of Electrical and Electronics Engineers, Inc

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Horizon Profile Checkpoints For Low-Altitude Aircraft

A technique for utilizing on-board sensed horizon profiles and computer stored reference horizon profiles to provide navigation check points for low-altitude aircraft is described. The technique has been analyzed using digitized terrain data and computer simulations to select the best method of horizon profile comparison, to determine horizon data density requirements, and to provide performance comparisons, system error limitations, and tradeoffs. Results of these analyses are shown to support feasibility conclusions and system parameter tradeoffs. Copyright © 1976 by The Institute of Electrical and Electronics Engineers, Inc

Motif Statistics and Spike Correlations in Neuronal Networks

Motifs are patterns of subgraphs of complex networks. We studied the impact of such patterns of connectivity on the level of correlated, or synchronized, spiking activity among pairs of cells in a recurrent network model of integrate and fire neurons. For a range of network architectures, we find that the pairwise correlation coefficients, averaged across the network, can be closely approximated using only three statistics of network connectivity. These are the overall network connection probability and the frequencies of two second-order motifs: diverging motifs, in which one cell provides input to two others, and chain motifs, in which two cells are connected via a third intermediary cell. Specifically, the prevalence of diverging and chain motifs tends to increase correlation. Our method is based on linear response theory, which enables us to express spiking statistics using linear algebra, and a resumming technique, which extrapolates from second order motifs to predict the overall effect of coupling on network correlation. Our motif-based results seek to isolate the effect of network architecture perturbatively from a known network state

Numerical Solution of Differential Equations by the Parker-Sochacki Method

A tutorial is presented which demonstrates the theory and usage of the Parker-Sochacki method of numerically solving systems of differential equations. Solutions are demonstrated for the case of projectile motion in air, and for the classical Newtonian N-body problem with mutual gravitational attraction.Comment: Added in July 2010: This tutorial has been posted since 1998 on a university web site, but has now been cited and praised in one or more refereed journals. I am therefore submitting it to the Cornell arXiv so that it may be read in response to its citations. See "Spiking neural network simulation: numerical integration with the Parker-Sochacki method:" J. Comput Neurosci, Robert D. Stewart & Wyeth Bair and http://www.ncbi.nlm.nih.gov/pmc/articles/PMC2717378

Timescales of spike-train correlation for neural oscillators with common drive

We examine the effect of the phase-resetting curve (PRC) on the transfer of correlated input signals into correlated output spikes in a class of neural models receiving noisy, super-threshold stimulation. We use linear response theory to approximate the spike correlation coefficient in terms of moments of the associated exit time problem, and contrast the results for Type I vs. Type II models and across the different timescales over which spike correlations can be assessed. We find that, on long timescales, Type I oscillators transfer correlations much more efficiently than Type II oscillators. On short timescales this trend reverses, with the relative efficiency switching at a timescale that depends on the mean and standard deviation of input currents. This switch occurs over timescales that could be exploited by downstream circuits