A V-grooved AlGaAs/GaAs passivated PN junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction

Advanced power systems for EOS

The Earth Observing System, which is part of the International Mission to Planet Earth, is NASA's main contribution to the Global Change Research Program. Five large platforms are to be launched into polar orbit: two by NASA, two by the European Space Agency, and one by the Japanese. In such an orbit the radiation resistance of indium phosphide solar cells combined with the potential of utilizing 5 micron cell structures yields an increase of 10 percent in the payload capability. If further combined with the Advanced Photovoltaic Solar Array, the total additional payload capability approaches 12 percent

Design strategies for the International Space University's variable gravity research facility

A variable gravity research facility named 'Newton' was designed by 58 students from 13 countries at the International Space University's 1989 summer session at the Universite Louis Pasteur, Strasbourge, France. The project was comprehensive in scope, including a political and legal foundation for international cooperation, development and financing; technical, science and engineering issues; architectural design; plausible schedules; and operations, crew issues and maintenance. Since log-term exposure to zero gravity is known to be harmful to the human body, the main goal was to design a unique variable gravity research facility which would find a practical solution to this problem, permitting a manned mission to Mars. The facility would not duplicate other space-based facilities and would provide the flexibility for examining a number of gravity levels, including lunar and Martian gravities. Major design alternatives included a truss versus a tether based system which also involved the question of docking while spinning or despinning to dock. These design issues are described. The relative advantages or disadvantages are discussed, including comments on the necessary research and technology development required for each

The International Space University's variable gravity research facility design

A manned mission to Mars will require long travel times between Earth and Mars. However, exposure to long-duration zero gravity is known to be harmful to the human body. Some of the harmful effects are loss of heart and lung capacity, inability to stand upright, muscular weakness and loss of bone calcium. A variable gravity research facility (VGRF) that would be placed in low Earth orbit (LEO) was designed by students of the International Space University 1989 Summer Session held in Strasbourg, France, to provide a testbed for conducting experiments in the life and physical sciences in preparation for a mission to Mars. This design exercise was unique because it addressed all aspects concerning a large space project. The VGRF design was described which was developed by international participants specializing in the following areas: the politics of international cooperation, engineering, architecture, in-space physiology, material and life science experimentation, data communications, business, and management

Advances in thin-film solar cells for lightweight space photovoltaic power

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology

Texturing of InP surfaces for device applications

A unique process for texturing InP (100) wafers by anisotropic etching was developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices

Enhancing optical absorption in InP and GaAs utilizing profile etching

The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching

Measurement of the minority carrier diffusion length and edge surface-recombination velocity in InP

A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L(sub n)) and the edge surface-recombination velocity (V(sub s)) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure V(sub s), and these values were used in a theoretical expression for normalized EBIC. A fit of the experimental data with this expression enabled us to determine L(sub n)

Use of Advanced Solar Cells for Commercial Communication Satellites

The current generation of communications satellites are located primarily in geosynchronous Earth orbit (GEO). Over the next decade, however, a new generation of communications satellites will be built and launched, designed to provide a world-wide interconnection of portable telephones. For this mission, the satellites must be positioned in lower polar and near-polar orbits. To provide complete coverage, large numbers of satellites will be required. Because the required number of satellites decreases as the orbital altitude is increased, fewer satellites would be required if the orbit chosen were raised from low to intermediate orbit. However, in intermediate orbits, satellites encounter significant radiation due to trapped electrons and protons. Radiation tolerant solar cells may be necessary to make such satellites feasible. We analyze the amount of radiation encountered in low and intermediate polar orbits at altitudes of interest to next-generation communication satellites, calculate the expected degradation for silicon, GaAs, and InP solar cells, and show that the lifetimes can be significantly increased by use of advanced solar cells