10 research outputs found

    Solution-processed LiF for work function tuning in electrode bilayers

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    Although ambient processing is the key to low-cost organic solar cell production, high vacuum thermal evaporation of LiF is often a limiting step, motivating the exploration of solution processing of LiF as an alternative electrode interlayer. Sub-monolayer films are realized with the assistance of polymeric micelle reactors that enable LiF particle deposition with controlled nanoscale surface coverage. Scanning Kelvin probe reveals a work function tunable with nanoparticle coverage, with higher values than that of bare tin-doped indium oxide

    Dual Mode Kelvin Probe: Featuring Ambient Pressure Photoemission Spectroscopy and Contact Potential Difference

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    AbstractWe describe a novel dual-mode Kelvin probe featuring ambient pressure Photoemission Spectroscopy (PES), which yields information on the absolute work function (Φ) of a metal and the Ionisation Potential (IP) of a semiconductor, coupled with a high resolution Contact Potential Difference capability which can be extended to Surface Photovoltage measurements. The relative energy resolution are 50 meV for PES and 1-3 meV for CPD. To surmount the limitation of electron scattering in air the incident photon energy is rastered rather than applying a variable retarding electric field as is used UPS. We propose a mechanism of atmospheric ion generation and show that for the metal photoresponse obeys Fowler Theory. The relationship between CPD and photoelectric threshold is a useful tool in characterizing the electrical behavior of materials. We illustrate this with native oxide covered Cu and n-type Si. Further we show that the photoresponse can be used to generate the near Fermi-level Density of States (DOS) in Iron and Nickel-Phthalocyanine

    Charge Density in Atmospheric Pressure Chemical Vapor Deposition TiO 2 on SiO 2 -Passivated Silicon

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    The charge density of a TiO2 film deposited on a SiO2 -passivated silicon wafer is determined. The TiO2 is deposited by atmospheric pressure chemical vapor deposition at 400°C, and the SiO2 is grown thermally at 950°C. This TiO2 - SiO2 stack is a usefu

    An investigation of the energy levels within a common perovskite solar cell device and a comparison of DC/AC surface photovoltage spectroscopy Kelvin Probe measurements of different MAPBI<sub>3</sub> perovskite solar cell device structures

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    We present a study of the energy levels in a FTO/TiO2/CH3NH3PbI3/Spiro solar cell device. The measurements are performed using a novel ambient pressure photoemission (APS) technique alongside Contact Potential Difference data from a Kelvin Probe. The Perovskite Solar Cell energy band diagram is demonstrated for the device in dark conditions and under illumination from a 150W Quartz Tungsten Halogen lamp. This approach provides useful information on the interaction between the different materials in this solar cell device. Additionally, non-destructive macroscopic DC and AC Surface Photovoltage Spectroscopy (SPS) studies are demonstrated of different MAPBI3 device structures to give an indication of overall device performance. AC-SPS measurements, previously used on traditional semiconductors to study the mobility, are used in this case to characterise the ability of a perovskite solar cell device to respond rapidly to chopped light. Two different device structures studied showed very different characteristics: Sample A (without TiO2): (ITO/PEDOT:PSS/polyTPD/CH3NH3PbI3/PCBM) had ∼4 times the magnitude of AC-SPS response compared to Sample B (including TiO2): (ITO/TiO2/ CH3NH3PbI3/Spiro). This demonstrates that the carrier speed characteristics of device architecture A is superior to device architecture B. The TiO2 layer has been associated with carrier trapping which is illustrated in this example. However, the DC-SPV performance of sample B is ∼5 times greater than that of sample A. The band gap of the MAPBI3 layer was determined through DC-SPS (1.57 ± 0.07 eV), Voc of the devices measured and qualitative observations made of interface trapping by DC light pulsing. The combination of these (APS, KP, AC/DC-SPV/SPS) techniques offers a more general method for measuring the energy level alignments and performance of Organic and Hybrid Solar Cell Devices.</p

    An investigation of the energy levels within a common perovskite solar cell device and a comparison of DC/AC surface photovoltage spectroscopy Kelvin Probe measurements of different MAPBI<sub>3</sub> perovskite solar cell device structures

    No full text
    We present a study of the energy levels in a FTO/TiO2/CH3NH3PbI3/Spiro solar cell device. The measurements are performed using a novel ambient pressure photoemission (APS) technique alongside Contact Potential Difference data from a Kelvin Probe. The Perovskite Solar Cell energy band diagram is demonstrated for the device in dark conditions and under illumination from a 150W Quartz Tungsten Halogen lamp. This approach provides useful information on the interaction between the different materials in this solar cell device. Additionally, non-destructive macroscopic DC and AC Surface Photovoltage Spectroscopy (SPS) studies are demonstrated of different MAPBI3 device structures to give an indication of overall device performance. AC-SPS measurements, previously used on traditional semiconductors to study the mobility, are used in this case to characterise the ability of a perovskite solar cell device to respond rapidly to chopped light. Two different device structures studied showed very different characteristics: Sample A (without TiO2): (ITO/PEDOT:PSS/polyTPD/CH3NH3PbI3/PCBM) had ∼4 times the magnitude of AC-SPS response compared to Sample B (including TiO2): (ITO/TiO2/ CH3NH3PbI3/Spiro). This demonstrates that the carrier speed characteristics of device architecture A is superior to device architecture B. The TiO2 layer has been associated with carrier trapping which is illustrated in this example. However, the DC-SPV performance of sample B is ∼5 times greater than that of sample A. The band gap of the MAPBI3 layer was determined through DC-SPS (1.57 ± 0.07 eV), Voc of the devices measured and qualitative observations made of interface trapping by DC light pulsing. The combination of these (APS, KP, AC/DC-SPV/SPS) techniques offers a more general method for measuring the energy level alignments and performance of Organic and Hybrid Solar Cell Devices.</p

    Electrical Potential of Acupuncture Points: Use of a Noncontact Scanning Kelvin Probe

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    Objective. Acupuncture points are reportedly distinguishable by their electrical properties. However, confounders arising from skin-to-electrode contact used in traditional electrodermal methods have contributed to controversies over this claim. The Scanning Kelvin Probe is a state-of-the-art device that measures electrical potential without actually touching the skin and is thus capable of overcoming these confounding effects. In this study, we evaluated the electrical potential profiles of acupoints LI-4 and PC-6 and their adjacent controls. We hypothesize that acupuncture point sites are associated with increased variability in potential compared to adjacent control sites. Methods. Twelve healthy individuals were recruited for this study. Acupuncture points LI-4 and PC-6 and their adjacent controls were assessed. A 2 mm probe tip was placed over the predetermined skin site and adjusted to a tip-to-sample distance of 1.0 mm under tip oscillation settings of 62.4 Hz frequency. A surface potential scan spanning a 1.0 cm × 1.0 cm area was obtained. Results. At both the PC-6 and LI-4 sites, no significant differences in mean potential were observed compared to their respective controls (Wilcoxon rank-sum test, and 0.79, resp.). However, the LI-4 site was associated with significant increase in variability compared to its control as denoted by standard deviation and range ( and 0.0005, resp.). At the PC-6 site, no statistical differences in variability were observed. Conclusion. Acupuncture points may be associated with increased variability in electrical potential

    Applying the Kelvin probe to biological tissues: Theoretical and computational analyses

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    The Kelvin probe measures surface electrical potential without making physical contact with the specimen. It relies on capacitive coupling between an oscillating metal tip that is normal to a specimen's surface. Kelvin probes have been increasingly used to study surface and electrical properties of metals and semiconductors and are capable of detecting material surface potentials with submillivolt resolution at a micrometer spatial scale. Its capability for measuring electrical potential without being confounded by electrode-specimen contact makes extending its use towards biological materials particularly appealing. However, the theoretical basis for applying the Kelvin probe to dielectric or partially conductive materials such as biological tissue has not been evaluated and remains unclear. This study develops the theoretical basis underlying Kelvin probe measurements in five theoretical materials: highly conductive, conductive dielectric with rapid charge relaxation, conductive dielectric with slow charge relaxation, perfect dielectric, and tissue with a bulk serial resistance. These theoretically derived equations are then computationally analyzed using parameters from both theoretical specimens and actual biomaterials—including wet skin, dry skin, cerebrospinal fluid, and tendon. Based on these analyses, a Kelvin probe performs in two distinct ways depending on the charge relaxation rates of the sample: The specimen is treated either as a perfect dielectric or as highly conductive material. Because of their rapid relaxation rate and increased permittivity biomaterials behave similarly to highly conductive materials, such as metal, when evaluated by the Kelvin probe. These results indicate that the Kelvin probe can be readily applied to studying the surface potential of biological tissue.National Center for Complementary and Alternative Medicine (U.S.) (grant nos. R21AT005249 and P30AT005895
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