Outline History of Cina

801 p. ; 23 cm

Identification of a Toxin–Antitoxin System That Contributes to Persister Formation by Reducing NAD in Pseudomonas aeruginosa

Bacterial persisters are slow-growing or dormant cells that are highly tolerant to bactericidal antibiotics and contribute to recalcitrant and chronic infections. Toxin/antitoxin (TA) systems play important roles in controlling persister formation. Here, we examined the roles of seven predicted type II TA systems in the persister formation of a Pseudomonas aeruginosa wild-type strain PA14. Overexpression of a toxin gene PA14_51010 or deletion of the cognate antitoxin gene PA14_51020 increased the bacterial tolerance to antibiotics. Co-overexpression of PA14_51010 and PA14_51020 or simultaneous deletion of the two genes resulted in a wild-type level survival rate following antibiotic treatment. The two genes were located in the same operon that was repressed by PA14_51020. We further demonstrated the interaction between PA14_51010 and PA14_51020. Sequence analysis revealed that PA14_51010 contained a conserved RES domain. Overexpression of PA14_51010 reduced the intracellular level of nicotinamide adenine dinucleotide (NAD+). Mutation of the RES domain abolished the abilities of PA14_51010 in reducing NAD+ level and promoting persister formation. In addition, overproduction of NAD+ by mutation in an nrtR gene counteracted the effect of PA14_51010 overexpression in promoting persister formation. In combination, our results reveal a novel TA system that contributes to persister formation through reducing the intracellular NAD+ level in P. aeruginosa

Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (VTH) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the VTH of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the VTH can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible VTH modulation range, which is of great interest for versatile power applications

A Mesozoic fossil lagerstätte from 250.8 million years ago shows a modern-type marine ecosystem.

International audienceFinely preserved fossil assemblages (lagerstätten) provide crucial insights into evolutionary innovations in deep time. We report an exceptionally preserved Early Triassic fossil assemblage, the Guiyang Biota, from the Daye Formation near Guiyang, South China. High-precision uranium-lead dating shows that the age of the Guiyang Biota is 250.83 +0.07/-0.06 million years ago. This is only 1.08 ± 0.08 million years after the severe Permian-Triassic mass extinction, and this assemblage therefore represents the oldest known Mesozoic lagerstätte found so far. The Guiyang Biota comprises at least 12 classes and 19 orders, including diverse fish fauna and malacostracans, revealing a trophically complex marine ecosystem. Therefore, this assemblage demonstrates the rapid rise of modern-type marine ecosystems after the Permian-Triassic mass extinction