Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga+ beam in a gaseous XeF2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-fille

Superconducting states of the quasi-2D Holstein model: effects of vertex and non-local corrections

I investigate superconducting states in a quasi-2D Holstein model using the dynamical cluster approximation. The effects of spatial fluctuations (non-local corrections) are examined and approximations neglecting and incorporating lowest order vertex corrections are computed. The approximation is expected to be valid for electron–phonon couplings of less than the bandwidth. The phase diagram and superconducting order parameter are calculated. Effects which can only be attributed to theories beyond Migdal–Eliashberg theory are present. In particular, the order parameter shows momentum dependence on the Fermi surface with a modulated form and s-wave order is suppressed at half-filling. The results are discussed in relation to Hohenberg's theorem and the Bardeen–Cooper–Schrieffer approximation

Author Correction: Drivers of seedling establishment success in dryland restoration efforts

1 Pág. Correción errata.In the version of this Article originally published, the surname of author Tina Parkhurst was incorrectly written as Schroeder. This has now been corrected.Peer reviewe

Direct Nerve Sutures in (Extended) Upper Obstetric Brachial Plexus Repair

Background In rare, selected cases of severe (extended) upper obstetric brachial plexus palsy (OBPP), after supraclavicular exposure and distal mobilization of the traumatized trunks and careful neuroma excision, we decided to perform direct nerve coaptation with tolerable tension and immobilized the affected arm positioned in adduction and 90-degree elbow flexion for three weeks. Objectives We present our surgical technique and preliminary results in a prospective open patient series, including 22 patients (14 right and 8 left side affected) between 2009 and 2016, operated at a mean age of 8.4 months. Methods Analysis of functional results after a minimum of 18 months was conducted using the British Medical Research Council (BMRC) scale. Results All children reached 60-90° of elbow flexion and 75° of shoulder abduction at already six months after surgery. For those patients having already passed one year post surgery, the mean active shoulder abduction reached 92°, and for those who past the 18 months 124°. We discuss the actual knowledge about nerve coaptation under reasonable tension including its advantages and drawbacks. Conclusion This technique may be indicated in preoperatively selected cases of (extended) upper OBPP and may give good functional results.SCOPUS: ar.jinfo:eu-repo/semantics/publishe

Versatile direct-writing of dopants in a solid state host through recoil implantation.

Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices

Population extinctions driven by climate change, population size, and time since observation may make rare species databases inaccurate.

Loss of biological diversity through population extinctions is a global phenomenon that threatens many ecosystems. Managers often rely on databases of rare species locations to plan land use actions and conserve at-risk taxa, so it is crucial that the information they contain is accurate and dependable. However, small population sizes, long gaps between surveys, and climate change may be leading to undetected extinctions of many populations. We used repeated survey records for a rare but widespread orchid, Cypripedium fasciculatum (clustered lady's slipper), to model population extinction risk based on elevation, population size, and time between observations. Population size and elevation were negatively associated with extinction, while extinction probability increased with time between observations. We interpret population losses at low elevations as a potential signal of climate change impacts. We used this model to estimate the probability of persistence of populations across California and Oregon, and found that 39%-52% of the 2415 populations reported in databases from this region are likely extinct. Managers should be aware that the number of populations of rare species in their databases is potentially an overestimate, and consider resurveying these populations to document their presence and condition, with priority given to older reports of small populations, especially those at low elevations or in other areas with high vulnerability to climate or land cover change

Versatile direct-writing of dopants in a solid state host through recoil implantation

Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic doping of atomically thin materials and engineering of near-surface states of semiconductor devices